74LVC1GU04-Q100
Unbuffered inverter
Rev. 1 — 14 May 2013
Product data sheet
1. General description
The 74LVC1GU04-Q100 is a single unbuffered inverter.
The input can be driven from either 3.3 V or 5 V devices. This feature allows the use of
this device in a mixed 3.3 V and 5 V environment.
This product has been qualified to the Automotive Electronics Council (AEC) standard
Q100 (Grade 1) and is suitable for use in automotive applications.
2. Features and benefits
Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from
40 C
to +85
C
and from
40 C
to +125
C
Wide supply voltage range from 1.65 V to 5.5 V
High noise immunity
ESD protection:
MIL-STD-883, method 3015 exceeds 2000 V
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V (C = 200 pf, R = 0
)
24
mA output drive (V
CC
= 3.0 V)
CMOS low power consumption
Latch-up performance exceeds 250 mA
Input accepts voltages up to 5 V
3. Ordering information
Table 1.
Ordering information
Package
Temperature range
74LVC1GU04GW-Q100
40 C
to +125
C
74LVC1GU04GV-Q100
40 C
to +125
C
Name
TSSOP5
SC-74A
Description
plastic thin shrink small outline package;
5 leads; body width 1.25 mm
plastic surface-mounted package; 5 leads
Version
SOT353-1
SOT753
Type number
NXP Semiconductors
74LVC1GU04-Q100
Unbuffered inverter
4. Marking
Table 2.
Marking codes
Marking
[1]
VD
VU4
Type number
74LVC1GU04GW-Q100
74LVC1GU04GV-Q100
[1]
The pin 1 indicator is located on the lower left corner of the device, below the marking code.
5. Functional diagram
V
CC
V
CC
A
2
A
Y
4
2
1
4
100
Ω
Y
mna108
mna109
mna636
Fig 1.
Logic symbol
Fig 2.
IEC logic symbol
Fig 3.
Logic diagram
6. Pinning information
6.1 Pinning
Fig 4.
Pin configuration SOT353-1 and SOT753
6.2 Pin description
Table 3.
Symbol
n.c.
A
GND
Y
V
CC
Pin description
Pin
1
2
3
4
5
Description
not connected
data input
ground (0 V)
data output
supply voltage
74LVC1GU04_Q100
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 1 — 14 May 2013
2 of 14
NXP Semiconductors
74LVC1GU04-Q100
Unbuffered inverter
7. Functional description
Table 4.
Input (A)
L
H
[1]
H = HIGH voltage level; L = LOW voltage level.
Function table
[1]
Output (Y)
H
L
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
I
IK
V
I
I
OK
V
O
I
O
I
CC
I
GND
P
tot
T
stg
[1]
[2]
[3]
Parameter
supply voltage
input clamping current
input voltage
output clamping current
output voltage
output current
supply current
ground current
total power dissipation
storage temperature
Conditions
V
I
< 0 V
[1]
Min
0.5
-
0.5
-
[1][2]
Max
+6.5
50
+6.5
50
V
CC
+ 0.5
50
+100
100
250
+150
Unit
V
mA
V
mA
V
mA
mA
mA
mW
C
V
O
> V
CC
or V
O
< 0 V
Active mode
V
O
= 0 V to V
CC
0.5
-
-
-
T
amb
=
40 C
to +125
C
[3]
-
65
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
When V
CC
= 0 V (Power-down mode), the output voltage can be 5.5 V in normal operation.
For TSSOP5 and SC-74A packages: above 87.5
C
the value of P
tot
derates linearly with 4.0 mW/K.
9. Recommended operating conditions
Table 6.
Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
V
CC
V
I
V
O
T
amb
t/V
supply voltage
input voltage
output voltage
ambient temperature
input transition rise and fall rate
V
CC
= 1.65 V to 2.7 V
V
CC
= 2.7 V to 5.5 V
Active mode
Conditions
Min
1.65
0
0
40
0
0
Typ
-
-
-
-
-
-
Max
5.5
5.5
V
CC
+125
20
10
Unit
V
V
V
C
ns/V
ns/V
74LVC1GU04_Q100
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 1 — 14 May 2013
3 of 14
NXP Semiconductors
74LVC1GU04-Q100
Unbuffered inverter
10. Static characteristics
Table 7.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
T
amb
=
40 C
to +85
C
V
IH
V
IL
V
OH
HIGH-level input voltage
LOW-level input voltage
V
CC
= 1.65 V to 5.5 V
V
CC
= 1.65 V to 5.5 V
I
O
=
100 A;
V
CC
= 1.65 V to 5.5 V
I
O
=
4
mA; V
CC
= 1.65 V
I
O
=
8
mA; V
CC
= 2.3 V
I
O
=
12
mA; V
CC
= 2.7 V
I
O
=
24
mA; V
CC
= 3.0 V
I
O
=
32
mA; V
CC
= 4.5 V
V
OL
LOW-level output voltage
V
I
= V
IH
or V
IL
I
O
= 100
A;
V
CC
= 1.65 V to 5.5 V
I
O
= 4 mA; V
CC
= 1.65 V
I
O
= 8 mA; V
CC
= 2.3 V
I
O
= 12 mA; V
CC
= 2.7 V
I
O
= 24 mA; V
CC
= 3.0 V
I
O
= 32 mA; V
CC
= 4.5 V
I
I
I
CC
C
I
V
IH
V
IL
V
OH
input leakage current
supply current
input capacitance
HIGH-level input voltage
LOW-level input voltage
V
I
= 5.5 V or GND; V
CC
= 0 V to
5.5 V
V
I
= 5.5 V or GND; I
O
= 0 A;
V
CC
= 1.65 V to 5.5 V
V
CC
= 3.3 V; V
I
= GND to V
CC
V
CC
= 1.65 V to 5.5 V
V
CC
= 1.65 V to 5.5 V
I
O
=
100 A;
V
CC
= 1.65 V to 5.5 V
I
O
=
4
mA; V
CC
= 1.65 V
I
O
=
8
mA; V
CC
= 2.3 V
I
O
=
12
mA; V
CC
= 2.7 V
I
O
=
24
mA; V
CC
= 3.0 V
I
O
=
32
mA; V
CC
= 4.5 V
-
-
-
-
-
-
-
-
-
0.8
V
CC
-
V
CC
0.1
0.95
1.7
1.9
2.0
3.4
-
-
-
-
-
-
0.1
0.1
6
-
-
-
-
-
-
-
-
0.1
0.45
0.3
0.4
0.55
0.55
5
10
-
-
0.2
V
CC
-
-
-
-
-
-
V
V
V
V
V
V
A
A
pF
V
V
V
V
V
V
V
V
0.75
V
CC
-
V
CC
0.1
1.2
1.9
2.2
2.3
3.8
-
-
-
-
-
-
-
-
-
0.25
V
CC
-
-
-
-
-
-
V
V
V
V
V
V
V
V
Conditions
Min
Typ
[1]
Max
Unit
HIGH-level output voltage V
I
= V
IH
or V
IL
T
amb
=
40 C
to +125
C
HIGH-level output voltage V
I
= V
IH
or V
IL
74LVC1GU04_Q100
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 1 — 14 May 2013
4 of 14
NXP Semiconductors
74LVC1GU04-Q100
Unbuffered inverter
Table 7.
Static characteristics
…continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
V
OL
LOW-level output voltage
Conditions
V
I
= V
IH
or V
IL
I
O
= 100
A;
V
CC
= 1.65 V to 5.5 V
I
O
= 4 mA; V
CC
= 1.65 V
I
O
= 8 mA; V
CC
= 2.3 V
I
O
= 12 mA; V
CC
= 2.7 V
I
O
= 24 mA; V
CC
= 3.0 V
I
O
= 32 mA; V
CC
= 4.5 V
I
I
I
CC
input leakage current
supply current
V
I
= 5.5 V or GND; V
CC
= 0 V to
5.5 V
V
I
= 5.5 V or GND; I
O
= 0 A;
V
CC
= 1.65 V to 5.5 V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.1
-
0.1
0.7
0.45
0.6
0.80
0.80
5
200
V
V
V
V
V
V
A
A
Min
Typ
[1]
Max
Unit
[1]
All typical values are measured at V
CC
= 3.3 V and T
amb
= 25
C.
11. Dynamic characteristics
Table 8.
Dynamic characteristics
Voltages are referenced to GND (ground = 0 V). For test circuit, see
Figure 8.
Symbol Parameter
t
pd
Conditions
[2]
40 C
to +85
C
Min
Typ
[1]
1.7
1.3
1.7
1.6
1.3
14.9
Max
5.0
4.0
5.0
3.7
3.0
-
40 C
to +125
C
Unit
Min
0.3
0.3
0.5
0.5
0.5
-
Max
6.5
5.5
6.5
5.0
4.0
-
ns
ns
ns
ns
ns
pF
propagation delay A to Y; see
Figure 5
V
CC
= 1.65 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 2.7 V
V
CC
= 3.0 V to 3.6 V
V
CC
= 4.5 V to 5.5 V
0.3
0.3
0.5
0.5
0.5
[3]
C
PD
power dissipation
capacitance
V
I
= GND to V
CC
;
V
CC
= 3.3 V
-
[1]
[2]
[3]
Typical values are measured at T
amb
= 25
C
and V
CC
= 1.8 V, 2.5 V, 2.7 V, 3.3 V and 5.0 V respectively.
t
pd
is the same as t
PLH
and t
PHL
.
C
PD
is used to determine the dynamic power dissipation (P
D
in
W).
P
D
= C
PD
V
CC2
f
i
N +
(C
L
V
CC2
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in V;
N = number of inputs switching;
(C
L
V
CC2
f
o
) = sum of outputs.
74LVC1GU04_Q100
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 1 — 14 May 2013
5 of 14
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