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BR93L66RFJ

产品描述EEPROM,
产品类别存储    存储   
文件大小46KB,共2页
制造商ROHM(罗姆半导体)
官网地址https://www.rohm.com/
标准
下载文档 详细参数 全文预览

BR93L66RFJ概述

EEPROM,

BR93L66RFJ规格参数

参数名称属性值
是否Rohs认证符合
厂商名称ROHM(罗姆半导体)
包装说明,
Reach Compliance Codecompliant

文档预览

下载PDF文档
BR93L56-W/F-W/RF-W/FJ-W/RFJ-W/FV-W
/RFV-W/RFVM-W
BR93L66-W/F-W/RF-W/FJ-W/RFJ-W/FV-W
/RFV-W/RFVM-W
Features
• 2k bit serial EEPROM organized as 128
×
16bit (BR93L56)
4k bit serial EEPROM organized as 256
×
16bit (BR93L66)
• Low voltage operation
Read : 1.8~5.5V
Write : 1.8~5.5V
• Low current consumption
Active : 1.5mA MAX (Vcc=1.8~2.5V)
3mA MAX (Vcc=2.5~5.5V)
Standby : 2µA MAX
• Clock frequency : 500kHz MAX (Vcc=1.8~2.5V)
2MHz MAX (Vcc=2.5~5.5V)
• Write cycle time : 5ms MAX
Pin Configurations
BR93L56-W
BR93L66-W
CS 1
SK 2
DI 3
DO 4
8 Vcc
7 NC
6 NC
5 GND
BR93L56F-W/
FJ-W/FV-W
BR93L66F-W/
FJ-W/FV-W
NC 1
Vcc 2
CS 3
SK 4
8 NC
7 GND
6 DO
5 DI
DIP8
BR93L56RF-W/RFJ-W/
RFV-W/RFVM-W
BR93L66RF-W/RFJ-W/
RFV-W/RFVM-W
CS 1
SK 2
8 Vcc
7 NC
SOP8/SOP-J8/SSOP-B8
• Address auto-increment function during read operation
DI 3
6 NC
• Automatic erase-before-write function during write operation
DO 4
5 GND
• Inadvertent write protection function
SOP8/SOP-J8/SSOP-B8/MSOP8
Defaults to power up with write-disabled state
Pin Functions
Software instructions for write-enable/disable
Inadvertent write protection at low voltage (Vcc Lock-out function)
Functions
Pin Names
• READY/BUSY Status indicator function (DO pin)
Chip Select
CS
• Schmitt trigger circuit & noise filter are built into SK, DI pin.
SK
Serial Data Clock
• TTL compatible input/output
DI
Serial Data Input
• 1,000,000 write cycle typical
• 40 years data retention
• Operating temperature range : -40~85˚C
DO
GND
Vcc
Serial Data Output
Ground
Power Supply
Block Diagram
CS
Instruction Decode
Control
Clock Generation
Voltage
Detection
SK
Write
Disable
Address
7bit:
BR93L56
Buffer
8bit:
BR93L66
High Voltage
Generation
DI
Instruction
Register
Address
7bit:
BR93L56
Decoder
8bit:
BR93L66
DO
Data
Register
16bit
R/W
Amps
2~4k bit
EEPROM
Array
16bit
13

 
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