BZT55B2V4 ~ BZT55B75
Taiwan Semiconductor
Small Signal Product
500mW , 2% Tolerance SMD Zener Diode
FEATURES
- Wide zener voltage range selection: 2.4V to 75V
- VZ Tolerance Selection of ±2%
- Moisture sensitivity level 1
- Matte Tin(Sn) lead finish with Nickel(Ni) underplate
- Pb free and RoHS compliant
- All external surfaces are corrosion resistant and
leads are readily solderable
QUADRO Mini-MELF (LS34)
Hermetically Sealed Glass
MECHANICAL DATA
- Case: QUADRO Mini-MELF Package (JEDEC DO-213)
- High temperature soldering guaranteed: 270
o
C/10s
- Polarity: Indicated by cathode band
- Weight: 29 ± 2.5mg
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Power Dissipation
Forward Voltage
Thermal Resistance (Junction to Ambient)
Junction and Storage Temperature Range
Note1: Valid provided that electrodes are kept at ambient temperature
I
F
= 10 mA
(Note 1)
SYMBOL
P
D
V
F
R
θJA
T
J
, T
STG
VALUE
500
1
500
- 65 to + 175
UNIT
mW
V
o
C/W
o
C
Zener I vs. V Characteristics
V
BR
I
ZK
Z
ZK
I
ZT
V
Z
Z
ZT
I
ZM
V
ZM
: Voltage at I
ZK
: Test current for voltage V
BR
: Dynamic impedance at I
ZK
: Test current for voltage V
Z
: Voltage at current I
: Dynamic impedance at I
ZT
: Maximum steady state current
: Voltage at I
ZM
Document Number: DS_S1405002
Version: G14
BZT55B2V4 ~ BZT55B75
Taiwan Semiconductor
Small Signal Product
Electrical Characteristics
(Ratings at T
A
=25
o
C ambient temperature unless otherwise specified)
V
F
Forward Voltage = 1.0V Maximum @ I
F
= 10 mA for all part numbers
V
Z
Part Number
Min
BZT55B2V4
BZT55B2V7
BZT55B3V0
BZT55B3V3
BZT55B3V6
BZT55B3V9
BZT55B4V3
BZT55B4V7
BZT55B5V1
BZT55B5V6
BZT55B6V2
BZT55B6V8
BZT55B7V5
BZT55B8V2
BZT55B9V1
BZT55B10
BZT55B11
BZT55B12
BZT55B13
BZT55B15
BZT55B16
BZT55B18
BZT55B20
BZT55B22
BZT55B24
BZT55B27
BZT55B30
BZT55B33
BZT55B36
BZT55B39
BZT55B43
BZT55B47
BZT55B51
BZT55B56
BZT55B62
BZT55B68
BZT55B75
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5..49
6.08
6.66
7.35
8.04
8.92
9.80
10.78
11.76
12.74
14.70
15.68
17.64
19.60
21.56
23.52
26.46
29.40
32.34
35.28
38.22
42.14
46.06
49.98
54.88
60.76
66.64
73.50
Nom
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10.0
11.0
12.0
13.0
15.0
16.0
18.0
20.0
22.0
24.0
27.0
30.0
33.0
36.0
39.0
43.0
47.0
51.0
56.0
62.0
68.0
75.0
Max
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
10.20
11.22
12.24
13.26
15.30
16.32
18.36
20.40
22.44
24.48
27.54
30.60
33.66
36.72
39.78
43.86
47.94
52.02
57.12
63.24
69.36
76.50
@ I
ZT
(Volt)
I
ZT
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
Z
ZT
@ I
ZT
(Ω)
Max
85
85
85
85
85
85
75
60
35
25
10
8
7
7
10
15
20
20
26
30
40
50
55
55
80
80
80
80
80
90
90
110
125
135
150
160
170
I
ZK
(mA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
Z
ZK
@ I
ZK
I
R
@ V
R
(Ω)
Max
600
600
600
600
600
600
600
600
550
450
200
150
50
50
50
70
70
90
110
110
170
170
220
220
220
220
220
220
220
500
600
700
700
1000
1000
1000
1000
(µA)
Max
50
10
4
2
2
2
1
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
R
(V)
1
1
1
1
1
1
1
1
1
1
2
3
5
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
28
32
35
38
42
47
51
56
Notes： 1. The Zener Voltage (V
Z
) is tested under pulse condition of 10ms.
2. The device numbers listed have a standard tolerance on the nomial zener voltage of ±2%
3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages
shown and tighter voltage tolerances, contact your nearest
Taiwan Semiconductor
representative.
4. The Zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an
RMS value equal to 10% of the dc zener current(I
ZT
or I
ZK
) is superimposed to I
ZT
or I
ZK
.
Document Number: DS_S1405002
Version: G14
BZT55B2V4 ~ BZT55B75
Taiwan Semiconductor
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES (BZT55B2V4 ~ BZT55B75)
(TA=25℃ unless otherwise noted)
Fig. 1 Typical Forward Characteristics
1000
T
A
=25
o
C
Forward Current (mA)
10
100
Zener Current (mA)
100
T
A
=25
o
C
Fig. 2 Zener Breakdown Characteristics
1
10
0.1
1
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
Forward Voltage (V)
0.01
0
1
2
3
4
5
6
7
8
9
10
11
12
Zener Voltage (V)
Fig. 3 Zener Breakdown Characteristics
100
Power Dissipation (mW)
600
500
400
300
200
100
0.01
10
20
30
40
50
60
70
80
0
0
Fig. 4 Admissible Power Dissipation curve
10
Zener Current (mA)
1
0.1
40
80
120
160
200
Zener Voltage (V)
Ambient Temperature (
o
C)
Fig. 5 Typical Capacitance
1000
1000
Fig. 6 Effect of Zener Voltage on Impedence
Capacitance (pF)
100
Dynamic Impedence(Ohm)
100
10
10
I
Z
=5mA
I
Z
=20mA
1
1
1
10
Zener Voltage (V)
100
1
10
Zener Voltage (V)
100
Document Number: DS_S1405002
Version: G14
BZT55B2V4 ~ BZT55B75
Taiwan Semiconductor
Small Signal Product
ORDERING INFORMATION
PART NO.
BZT55Bxxx
(Note1)
MANUFACTURE
CODE
(Note 2)
PACKING CODE
L0
L1
GREEN
COMPOUND
G
G
PACKAGE
Quadro Mini-MELF (Glass Seal)
Quadro Mini-MELF (Glass Seal)
PACKING
10K / 13" Reel
2.5K / 7" Reel
Note 1: "xxx" is Device Code from "2V4" thru "75".
Note 2: Manufacture special control, if empty means no special control requirement.
EXAMPLE
PREFERRED P/N
BZT55B2V4 L0G
BZT55B2V4-L0 L0G
BZT55B2V4-B0 L0G
PART NO.
BZT55B2V4
BZT55B2V4
BZT55B2V4
L0
B0
MANUFACTURE
CODE
PACKING CODE
L0
L0
L0
GREEN COMPOUND
CODE
G
G
G
DESCRIPTION
Green compound
Green compound
Green compound
Document Number: DS_S1405002
Version: G14
BZT55B2V4 ~ BZT55B75
Taiwan Semiconductor
Small Signal Product
PACKAGE OUTLINE DIMENSIONS
C
DIM.
A
B
Unit (mm)
Min
3.30
1.40
0.20
Max
3.70
1.60
0.50
Unit (inch)
Min
0.130
0.055
0.008
Max
0.146
0.063
0.020
B
C
A
Document Number: DS_S1405002
Version: G14
NXP MCU
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