Synchronous DRAM, 256KX32, CMOS, PQCC68
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
厂商名称 | Infineon(英飞凌) |
Reach Compliance Code | not_compliant |
最大时钟频率 (fCLK) | 125 MHz |
I/O 类型 | COMMON |
JESD-30 代码 | S-PQCC-J68 |
JESD-609代码 | e0 |
内存密度 | 8388608 bit |
内存集成电路类型 | SYNCHRONOUS DRAM |
内存宽度 | 32 |
端子数量 | 68 |
字数 | 262144 words |
字数代码 | 256000 |
最高工作温度 | 70 °C |
最低工作温度 | |
组织 | 256KX32 |
输出特性 | 3-STATE |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | QCCJ |
封装等效代码 | LDCC68,1.0SQ |
封装形状 | SQUARE |
封装形式 | CHIP CARRIER |
电源 | 3.3 V |
认证状态 | Not Qualified |
最大待机电流 | 0.001 A |
最大压摆率 | 0.195 mA |
标称供电电压 (Vsup) | 3.3 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | COMMERCIAL |
端子面层 | Tin/Lead (Sn/Pb) |
端子形式 | J BEND |
端子节距 | 1.27 mm |
端子位置 | QUAD |
HYB39M83200L125 | HYB39M83200Q-100 | HYB39M93200L100 | HYB39M83200L-100 | HYB39M83200Q125 | HYB39M93200L125 | HYB39M93200Q125 | |
---|---|---|---|---|---|---|---|
描述 | Synchronous DRAM, 256KX32, CMOS, PQCC68 | Synchronous DRAM, 256KX32, CMOS, PQFP128, | Synchronous DRAM, 288KX32, CMOS, PQCC68 | Synchronous DRAM, 256KX32, CMOS, PQCC68, | Synchronous DRAM, 256KX32, CMOS, PQFP128 | Synchronous DRAM, 288KX32, CMOS, PQCC68 | Synchronous DRAM, 288KX32, CMOS, PQFP128 |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
Reach Compliance Code | not_compliant | compliant | unknown | compliant | unknown | not_compliant | not_compliant |
最大时钟频率 (fCLK) | 125 MHz | 100 MHz | 100 MHz | 100 MHz | 125 MHz | 125 MHz | 125 MHz |
I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
JESD-30 代码 | S-PQCC-J68 | R-PQFP-G128 | S-PQCC-J68 | S-PQCC-J68 | R-PQFP-G128 | S-PQCC-J68 | R-PQFP-G128 |
JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
内存密度 | 8388608 bit | 8388608 bit | 9437184 bit | 8388608 bit | 8388608 bit | 9437184 bit | 9437184 bit |
内存集成电路类型 | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM |
内存宽度 | 32 | 32 | 32 | 32 | 32 | 32 | 32 |
端子数量 | 68 | 128 | 68 | 68 | 128 | 68 | 128 |
字数 | 262144 words | 262144 words | 294912 words | 262144 words | 262144 words | 294912 words | 294912 words |
字数代码 | 256000 | 256000 | 288000 | 256000 | 256000 | 288000 | 288000 |
最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
组织 | 256KX32 | 256KX32 | 288KX32 | 256KX32 | 256KX32 | 288KX32 | 288KX32 |
输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | QCCJ | QFP | QCCJ | QCCJ | QFP | QCCJ | QFP |
封装等效代码 | LDCC68,1.0SQ | QFP128,.67X.93,20 | LDCC68,1.0SQ | LDCC68,1.0SQ | QFP128,.67X.93,20 | LDCC68,1.0SQ | QFP128,.67X.93,20 |
封装形状 | SQUARE | RECTANGULAR | SQUARE | SQUARE | RECTANGULAR | SQUARE | RECTANGULAR |
封装形式 | CHIP CARRIER | FLATPACK | CHIP CARRIER | CHIP CARRIER | FLATPACK | CHIP CARRIER | FLATPACK |
电源 | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
最大待机电流 | 0.001 A | 0.001 A | 0.001 A | 0.001 A | 0.001 A | 0.001 A | 0.001 A |
最大压摆率 | 0.195 mA | 0.195 mA | 0.195 mA | 0.195 mA | 0.195 mA | 0.195 mA | 0.195 mA |
标称供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
表面贴装 | YES | YES | YES | YES | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
端子形式 | J BEND | GULL WING | J BEND | J BEND | GULL WING | J BEND | GULL WING |
端子节距 | 1.27 mm | 0.5 mm | 1.27 mm | 1.27 mm | 0.5 mm | 1.27 mm | 0.5 mm |
端子位置 | QUAD | QUAD | QUAD | QUAD | QUAD | QUAD | QUAD |
厂商名称 | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) | - | - | Infineon(英飞凌) | Infineon(英飞凌) |
Base Number Matches | - | 1 | 1 | 1 | 1 | - | - |
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