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1N5408G

产品描述3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-27
产品类别半导体    分立半导体   
文件大小510KB,共2页
制造商TAYCHIPST
官网地址http://www.taychipst.com
下载文档 详细参数 选型对比 全文预览

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1N5408G概述

3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-27

3 A, 1000 V, 硅, 整流二极管, DO-27

1N5408G规格参数

参数名称属性值
端子数量2
元件数量1
状态CONSULT MFR
包装形状
包装尺寸LONG FORM
端子形式线
端子位置AXIAL
包装材料塑料/环氧树脂
结构单一的
壳体连接隔离
二极管元件材料
二极管类型整流二极管
应用GENERAL PURPOSE
相数1
最大重复峰值反向电压1000 V
最大平均正向电流3 A
最大非重复峰值正向电流200 A

文档预览

下载PDF文档
1N5400 THRU 1N5408
GENERAL PURPOSE RECTIFIERS
50V-1000V 3.0A
FEATURES :
*
*
*
*
*
Glass passivated chip
High current capability
High reliability
Low reverse current
Low forward voltage drop
GLASS PASSIVATED JUNCTION
SILICON RECTIFIERS
MECHANICAL DATA :
* Case : DO-201AD Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 1.16 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load
For capacitive load derate current by 20%
IN
IN
SYMBOLS
5400G 5401G
Maximum Repetitive Peak Reverse Voltage
V
RRM
50
100
Maximum RMS Voltage
V
RMS
35
70
Maximum DC Blocking Voltage
V
DC
50
100
Maximum Average Forward Rectified Current
0.375 (9.5mm) lead length at T
A
=75
Peak Forward Surge Current
8.3mS single half sine wave superimposed on
rated load (JEDEC method)
Maximum Instantaneous Forward Voltage at 3.0A
Maximum DC Reverse Current
at rated DC blocking Voltage at
T
A
= 25
T
A
= 125
IN
5402G
200
140
200
IN
5404G
400
280
400
3.0
125
1.1
5.0
50
30
IN
5406G
600
420
600
IN
5407G
800
560
800
IN
5408G
1000
700
1000
UNIT
Volts
Volts
Volts
Amp
Amps
Volts
µA
µA
pF
/W
I
(AV)
I
FSM
V
F
I
R
I
R(AV)
C
J
R
θJA
T
J
T
STG
Maximum Full Load Reverse Current, full cycle
Average 0.375(9.5mm) lead length at T
L
=75
Typical Junction Capacitance (NOTE 1)
Typical Thermal Resistance (NOTE 2)
Operating Temperature Range
Storage Temperature Range
40
30
(-55 to +150)
(-55 to +150)
Notes:
1.Measured at 1.0MHz and applied reverse voltage of 4.0 Volits.
2. Thermal Resistance from Junction to Ambient at. 375 (9.5mm)lead length, P.C. board mounted.
E-mail: sales@taychipst.com
1 of 2
Web Site: www.taychipst.com

1N5408G相似产品对比

1N5408G 1N5400 1N5401G 1N5402G 1N5404G 1N5406G 1N5407G 1N5400G
描述 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-27 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-27 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD RECTIFIER DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD
状态 CONSULT MFR ACTIVE - - - ACTIVE ACTIVE ACTIVE
二极管类型 整流二极管 整流二极管 - - - 整流二极管 RECTIFIER DIODE 整流二极管

 
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