电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

1N5408G

产品描述3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-27
产品类别半导体    分立半导体   
文件大小201KB,共2页
制造商SEMTECH_ELEC
官网地址http://www.semtech.net.cn
下载文档 详细参数 选型对比 全文预览

1N5408G在线购买

供应商 器件名称 价格 最低购买 库存  
1N5408G - - 点击查看 点击购买

1N5408G概述

3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-27

3 A, 1000 V, 硅, 整流二极管, DO-27

1N5408G规格参数

参数名称属性值
端子数量2
元件数量1
状态CONSULT MFR
包装形状
包装尺寸LONG FORM
端子形式线
端子位置AXIAL
包装材料塑料/环氧树脂
结构单一的
壳体连接隔离
二极管元件材料
二极管类型整流二极管
应用GENERAL PURPOSE
相数1
最大重复峰值反向电压1000 V
最大平均正向电流3 A
最大非重复峰值正向电流200 A

文档预览

下载PDF文档
1N5400G THRU 1N5408G
GLASS PASSIVATED SILICON RECTIFIERS
Reverse Voltage - 50 to 1000 V
Forward Current - 3 A
Features
• High current capability
• Glass passivated junction
• Low forward voltage drop
• Low reverse leakage
• The plastic package carries UL flammability
classification 94V-0
DO-201AD
1.45
1.15
DIA.
Min. 25.4
5.5
4.9
DIA.
9.2
8.6
Mechanical Data
• Case: Molded plastic, DO-201AD (DO-27)
• Terminals: Axial leads, solderable per MIL-STD-202,
Method 208
• Polarity: color band denotes cathode end
• Mounting Position: Any
Min. 25.4
Dimensions in mm
Absolute Maximum Ratings and Characteristics
Ratings at 25
O
C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive
load, derate current by 20%.
Parameter
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
0.375" (9.5 mm) Lead Length at T
A
= 75
O
C
Peak Forward Surge Current, 8.3 ms Single Half-
Sine-Wave Superimposed on Rated Load at T
j
=
125 C
Maximum Forward Voltage at 3 A DC
Maximum Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance
Typical Thermal Resistance
2)
1)
O
Symbols
1N5400G 1N5401G 1N5402G 1N5403G 1N5404G 1N5405G 1N5406G 1N5407G 1N5408G
Units
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
200
140
200
300
210
300
400
280
400
3
500
350
500
600
420
600
800
560
800
1000
700
1000
V
V
V
A
I
FSM
V
F
200
1.1
10
100
35
20
- 55 to + 175
- 55 to + 175
O
A
V
µA
pF
C/W
O
T
A
= 25
O
C
T
A
= 100
O
C
I
R
C
J
R
θJA
T
j
T
stg
Operating Junction Temperature Range
Storage Temperature Range
1)
2)
C
C
O
Measured at 1 MHz and applied reverse voltage of 4 V DC.
Thermal resistance from junction to ambient.
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 04/12/2008 B

1N5408G相似产品对比

1N5408G 1N5407G 1N5404G 1N5405G 1N5406G
描述 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-27 3 A, 800 V, SILICON, RECTIFIER DIODE 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 500 V, SILICON, RECTIFIER DIODE, DO-201AD RECTIFIER DIODE
状态 CONSULT MFR ACTIVE - - ACTIVE
二极管类型 整流二极管 RECTIFIER DIODE - - 整流二极管

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1596  2322  1946  2914  2108  57  25  35  14  5 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved