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1N5399

产品描述1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15
产品类别半导体    分立半导体   
文件大小48KB,共2页
制造商BILIN
官网地址http://www.galaxycn.com/
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1N5399概述

1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15

1.5 A, 1000 V, 硅, 整流二极管, DO-15

1N5399规格参数

参数名称属性值
端子数量2
元件数量1
状态ACTIVE
包装形状ROUND
包装尺寸LONG FORM
端子形式WIRE
端子涂层TIN LEAD
端子位置AXIAL
包装材料PLASTIC/EPOXY
结构SINGLE
壳体连接ISOLATED
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
应用GENERAL PURPOSE
相数1
反向恢复时间最大2 us
最大重复峰值反向电压1000 V
最大平均正向电流1.5 A
最大非重复峰值正向电流50 A

文档预览

下载PDF文档
BL
FEATURES
GALAXY ELECTRICAL
1N5391 - - - 1N5399
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 1.5 A
PLASTIC SILICON RECTIFIER
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
DO - 15
MECHANICAL DATA
Case:JEDEC DO-15,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014 ounces0.39 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
1N
1N
1N
1N
1N
1N
1N
1N
1N
UNITS
5391 5392 5393 5394 5395 5396 5397 5398 5399
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
200
140
200
300
210
300
400
280
400
1.5
500
350
500
600
420
600
800
560
800
1000
700
1000
V
V
V
A
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
50.0
A
Maximum instantaneous forw ard voltage
@ 1.5 A
Maximum reverse current
at rated DC blocking voltage
Typical junction capacitance
Typical thermal resistance
@T
A
=25
@T
A
=100
(Note1)
(Note2)
V
F
I
R
C
J
R
θ
JA
T
J
T
STG
1.1
5.0
50.0
20
40
- 55 ---- + 150
- 55 ---- + 150
V
A
pF
/W
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
2. Thermal resistance f rom junction to ambient.
www.galaxycn.com
Document Number 0260004
BL
GALAXY ELECTRICAL
1.

1N5399相似产品对比

1N5399 1N5396 1N5397 1N5398 1N5395
描述 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15 1.5 A, 500 V, SILICON, RECTIFIER DIODE, DO-204AL 1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-41 1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-204AL 1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-15

 
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