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1N4942

产品描述1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AP
产品类别半导体    分立半导体   
文件大小167KB,共2页
制造商LGE
官网地址http://www.luguang.cn/web_en/index.html
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1N4942概述

1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AP

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1N4942-1N4948
Fast Recovery Rectifiers
VOLTAGE RANGE:
200
---
1000
V
CURRENT: 1.0 A
Features
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
DO - 41
Mechanical Data
Case:JEDEC DO-41,molded plastic
Polarity: Color band denotes cathode
Weight: 0.34 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
1N
4942
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
1N
4944
400
280
400
1N
4946
600
420
600
1.0
1N
4947
800
560
800
1N
4948
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
200
140
200
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
30.0
A
Maximum instantaneous forw ard voltage
@ 1.0 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
150
1.3
5.0
100
250
12
55
- 55---- +150
- 55---- + 150
500
V
A
ns
pF
/W
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE:1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
http://www.luguang.cn
mail:lge@luguang.cn

1N4942相似产品对比

1N4942 1N4946 1N4947 1N4944 1N4948
描述 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AP 1 A, SILICON, SIGNAL DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AP 1 A, SILICON, SIGNAL DIODE, DO-41 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41

 
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