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TS27M4BCN

产品描述QUAD OP-AMP, 3000uV OFFSET-MAX, 1MHz BAND WIDTH, PDIP14, PLASTIC, DIP-14
产品类别模拟混合信号IC    放大器电路   
文件大小122KB,共9页
制造商ST(意法半导体)
官网地址http://www.st.com/
标准
下载文档 详细参数 全文预览

TS27M4BCN概述

QUAD OP-AMP, 3000uV OFFSET-MAX, 1MHz BAND WIDTH, PDIP14, PLASTIC, DIP-14

TS27M4BCN规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称ST(意法半导体)
零件包装代码DIP
包装说明PLASTIC, DIP-14
针数14
Reach Compliance Codecompliant
ECCN代码EAR99
放大器类型OPERATIONAL AMPLIFIER
架构VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB)0.00015 µA
标称共模抑制比80 dB
频率补偿YES
最大输入失调电压3000 µV
JESD-30 代码R-PDIP-T14
JESD-609代码e3
低-偏置YES
低-失调NO
微功率YES
负供电电压上限
标称负供电电压 (Vsup)
功能数量4
端子数量14
最高工作温度70 °C
最低工作温度
封装主体材料PLASTIC/EPOXY
封装代码DIP
封装等效代码DIP14,.3
封装形状RECTANGULAR
封装形式IN-LINE
峰值回流温度(摄氏度)NOT SPECIFIED
电源10 V
认证状态Not Qualified
座面最大高度5.1 mm
标称压摆率0.6 V/us
最大压摆率1 mA
供电电压上限18 V
标称供电电压 (Vsup)10 V
表面贴装NO
技术CMOS
温度等级COMMERCIAL
端子面层Matte Tin (Sn)
端子形式THROUGH-HOLE
端子节距2.54 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
标称均一增益带宽1000 kHz
最小电压增益20000
宽度7.62 mm

TS27M4BCN文档预览

TS27M4C,I,M
PRECISION LOW POWER
CMOS QUAD OPERATIONAL AMPLIFIERS
s
LOW POWER CONSUMPTION :
150µA/op
s
OUTPUT VOLTAGE CAN SWING TO
GROUND
s
EXCELLENT PHASE MARGIN ON
CAPACITIVE LOADS
s
STABLE AND LOW OFFSET VOLTAGE
s
THREE INPUT OFFSET VOLTAGE
SELECTIONS
DESCRIPTION
These devices are low cost, low power quad oper-
ational amplifiers designed to operate with single
or dual supplies. These operational amplifiers use
the ST silicon gate CMOS process allowing an ex-
cellent consumption-speed ratio. These series are
ideally suited for low consumption applications.
Three power consumptions are available allowing
to have always the best consumption-speed ratio:
N
DIP14
(Plastic Package)
D
SO14
(Plastic Micropackage)
P
TSSOP14
(Thin Shrink Small Outline Package)
u
I
CC
= 10µA/amp.: TS27L4 (very low power)
u
I
CC
= 150µA/amp.: TS27M4 (low power)
u
I
CC
= 1mA/amp.: TS274 (standard)
These CMOS amplifiers offer very high input im-
pedance and extremely low input currents. The
major advantage versus JFET devices is the very
low input currents drift with temperature (see fig-
ure 2).
ORDER CODE
Package
Part Number
Temperature Range
N
TS27M4C/AC/BC
0°C, +70°C
TS27M4I/AI/BI
-40°C, +125°C
TS27M4M/AM/BM
-55°C, +125°C
Example :
TS27M4ACN
D
P
PIN CONNECTIONS
(top view)
Output 1 1
Inverting Input 1 2
Non-inverting Input 1 3
V
CC
+ 4
Non-inverting Input 2 5
Inverting Input 2 6
Output 2 7
+
-
+
-
-
+
-
+
14 Output 4
13 Inverting Input 4
12 Non-inverting Input 4
11 V
CC
-
10 Non-inverting Input 3
9
8
Inverting Input 3
Output 3
N =
Dual in Line Package (DIP)
D =
Small Outline Package (SO) - also available in Tape & Reel (DT)
P =
Thin Shrink Small Outline Package (TSSOP) - only available
in Tape & Reel (PT)
November 2001
1/9
TS27M4C,I,M
BLOCK DIAGRAM
V
CC
Current
source
xI
Input
differential
Second
stage
Output
stage
Output
V
CC
E
E
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC+
V
id
V
i
I
o
I
in
T
oper
T
stg
Parameter
Supply Voltage
1)
Differential Input Voltage
2)
Input Voltage
3)
Output Current for V
CC+
15V
Input Current
Operating Free-Air Temperature Range
Storage Temperature Range
0 to +70
TS27M4C/AC/BC
TS27M4I/AI/BI TS27M4M/AM/BM
18
±18
-0.3 to 18
±30
±5
-40 to +125
-65 to +150
-55 to +125
Unit
V
V
V
mA
mA
°C
°C
1. All values, except differential voltage are with respect to network ground terminal.
2. Differential voltages are the non-inverting input terminal with respect to the inverting input terminal.
3. The magnitude of the input and the output voltages must never exceed the magnitude of the positive supply voltage.
OPERATING CONDITIONS
Symbol
V
CC+
V
icm
Supply Voltage
Common Mode Input Voltage Range
Parameter
Value
3 to 16
0 to V
CC+
- 1.5
Unit
V
V
2/9
V
CC
T
24
T
25
T
26
T
6
T
8
T
27
T
5
T
10
T
15
SCHEMATIC DIAGRAM
(for 1/4 TS27M4)
R
2
T
28
T
1
Input
T
18
T
2
Input
R1
C1
T
11
T
12
T
17
T
7
T
23
T
3
Output
T
19
T
4
T
16
T
9
T
13
T
14
T
20
T
22
T
21
T
29
V
CC
TS27M4C,I,M
3/9
TS27M4C,I,M
ELECTRICAL CHARACTERISTICS
V
CC
+
= +10V, V
CC
-
= 0V, T
amb
= +25°C (unless otherwise specified)
TS27M4C/AC/BC
Symbol
Parameter
Min.
Input Offset Voltage
V
O
= 1.4V, V
ic
= 0V
V
io
T
min
T
amb
T
max
TS27M4C/I/M
TS27M4AC/AI/AM
TS27M4B/C/I/M
TS27M4C/I/M
TS27M4AC/AI/AM
TS27M4B/C/I/M
Typ.
1.1
0.9
0.25
Max.
10
5
2
12
6.5
3
TS27M4I/AI/BI
TS27M4M/AM/BM
Min.
Typ.
Max.
10
5
2
12
6.5
3.5
Unit
1.1
0.9
0.25
mV
DV
io
I
io
Input Offset Voltage Drift
Input Offset Current note
1)
V
ic
= 5V, V
O
= 5V
T
min
T
amb
T
max
Input Bias Current - see note 1
V
ic
= 5V, V
O
= 5V
T
min
T
amb
T
max
High Level Output Voltage
V
id
= 100mV, R
L
= 100lΩ
T
min
T
amb
T
max
Low Level Output Voltage
V
id
= -100mV
Large Signal Voltage Gain
V
iC
= 5V, R
L
= 100kΩ, V
o
= 1V to 6V
T
min
T
amb
T
max
Gain Bandwidth Product
A
v
= 40dB, R
L
= 100kΩ, C
L
= 100pF, f
in
= 100kHz
Common Mode Rejection Ratio
V
iC
= 1V to 7.4V, V
o
= 1.4V
Supply Voltage Rejection Ratio
V
CC+
= 5V to 10V, V
o
= 1.4V
Supply Current (per amplifier)
A
v
= 1, no load, V
o
= 5V
T
min
T
amb
T
max
Output Short Circuit Current
V
o
= 0V, V
id
= 100mV
Output Sink Current
V
o
= V
CC
, V
id
= -100mV
Slew Rate at Unity Gain
R
L
= 100kΩ, C
L
= 100pF, V
i
= 3 to 7V
Phase Margin at Unity Gain
A
v
= 40dB, R
L
= 100kΩ, C
L
= 100pF
Overshoot Factor
Equivalent Input Noise Voltage
f = 1kHz, R
s
= 100Ω
Channel Separation
65
60
30
20
8.7
8.6
2
1
100
1
150
8.9
8.7
8.5
50
50
30
10
2
1
200
1
300
8.9
µV/°C
pA
I
ib
pA
V
OH
V
OL
A
vd
V
50
50
mV
V/mV
GBP
CMR
SVR
1
80
80
150
200
250
65
60
1
80
80
150
200
300
MHz
dB
dB
I
CC
I
o
I
sink
SR
φm
K
OV
e
n
V
o1
/V
o2
1.
µA
60
45
0.6
45
30
38
120
60
45
0.6
45
30
38
120
mA
mA
V/µs
Degrees
%
nV
-----------
-
Hz
dB
Maximum values including unavoidable inaccuracies of the industrial test.
4/9
TS27M4C,I,M
TYPICAL CHARACTERISTICS
Figure 1 :
Supply Current (each amplifier) versus
Supply Voltage
200
OUTPUT VOLTAGE, V
OH
(V)
SUPPLY CURRENT, I
CC
(
µ
A)
T
AMB
= 25
˚
C
A
V
= 1
V
O
= V / 2
CC
Figure 3b :
High Level Output Voltage versus
High Level Output Current
20
16
12
8
4
0
-50
V
CC
= 10V
T
AMB
= 25
˚
C
V
ID
= 100mV
V
CC
= 16V
150
100
50
0
4
8
12
16
-40
-30
-20
-10
0
SUPPLY VOLTAGE, V
CC
(V)
OUTPUT CURRENT, I
OH
(mA)
Figure 2 :
Input Bias Current versus Free Air
Temperature
100
INPUT BIAS CURRENT, I
IB
(pA)
Figure 4a :
Low Level Output Voltage versus Low
Level Output Current
1.0
OUTPUT VOLTAGE, V
OL
(V)
V
CC
= 10V
V
i
= 5V
V
CC
= 3V
0.8
V
CC
= 5V
0.6
0.4
0.2
T
AMB
= 25
˚
C
V
i
= 0.5V
V
ID
= -1V
10
1
25
50
75
100
125
TEMPERATURE, T
AMB
(
˚
C)
0
1
2
3
OUTPUT CURRENT, I
OL
(mA)
Figure 3a :
High Level Output Voltage versus
High Level Output Current
5
4
3
2
1
0
V
CC
= 3V
Figure 4b :
Low Level Output Voltage versus Low
Level Output Current
3
OUTPUT VOLTAGE, V
OL
(V)
OUTPUT VOLTAGE, V
OH
(V)
T
AMB
= 25
˚
C
V
ID
= 100mV
V
CC
= 5V
V
CC
= 10V
2
V
CC
= 16V
1
T
AMB
= 25
˚
C
V
i
= 0.5V
V
ID
= -1V
-10
-8
-6
-4
-2
0
0
4
8
12
16
20
OUTPUT CURRENT, I
OH
(mA)
OUTPUT CURRENT, I
OL
(mA)
5/9

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