GZF3V6C-GZF91C
Zener Diodes
V
Z
:
3.6 -- 91 V
800 mW
POWER DISSIPATION:
Features
◇
◇
◇
◇
Silicon planar power zener diodes.
Low leakage current
Low profile surface mount package.
High temperature soldering:
260℃/10 sec.at terminals.
1.9± 0.1
SOD-123FL
Cathode Band
Top View
2.8
±
0.1
1.4± 0.15
0.10-0.30
0.6
±
0.25
3.7
±
0.2
Mechanical Data
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Case:JEDEC SOD-123FL,molded plastic
Terminals: Solderable per MIL-
STD-202,Method 208
Polarity: Color band denotes cathods end
Weight: 0.006 ounces, 0.02 grams
Mounting position: any
Dimensions in millimeters
Maximum Ratings and Thermal Characteristics
Parameter
Power dissipation at T
A
=25℃ (Note 1)
Forward voltage @I
F
=200mA
Maximum thermal resistance
junction to ambient
Junction temperature
Storage temperature range
1）
(T
A
=25℃ unless otherwise noted)
Symbol
P
tot
V
F
R
θJA
T
J
T
STG
Value
800
1.2
180
-55 to +150
-55 to +150
1.0
±
0.2
Unit
mW
V
K/W
℃
℃
Mounted on epoxy glass PCB with 3×3mm,Cu pads(≥40µm thick)
http://www.luguang.cn
mail:lge@luguang.cn
GZF3V6C-GZF91C
Zener Diodes
Ratings AND Charactieristic Curves
FIG.1 --
TYPICAL FORWARD CHARACTERISTIC
10
10
mA
3
2
10
IF
1
10
10
10
-1
TJ = 100 °C
TJ = 25 °C
-2
-3
-4
10
10
-5
0
0.2
0.4
0.6
VF
0.8
1V
FIG.2 -- ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE
mW
800
P
tot 600
400
200
0
100
Tamb
200 °C
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mail:lge@luguang.cn
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