IDT74FCT2827AT/CT
FAST CMOS 10-BIT BUFFER
INDUSTRIAL TEMPERATURE RANGE
FAST CMOS
10-BIT BUFFER
IDT74FCT2827AT/CT
FEATURES:
−
−
−
−
−
−
−
−
Low input and output leakage
≤1µ
A (max.)
CMOS power levels
True TTL input and output compatibility
•
V
OH
= 3.3V (typ.)
•
V
OL
= 0.3V (typ.)
Meets or exceeds JEDEC standard 18 specifications
A and C speed grades
Resistor outputs
(-15mA I
OH
, 12mA I
OL
)
Reduced system switching noise
Available in SOIC, QSOP, and TSSOP packages
DESCRIPTION:
The FCT2827T 10-bit bus driver provides high-performance bus
interface buffering for wide data/address paths or buses carrying parity. The
10-bit buffers have NAND-ed output enables for maximum control flexibility.
All of the FCT2827T high-performance interface family are designed for
high-capacitance load drive capability, while providing low-capacitance
bus loading at both inputs and outputs. All inputs have clamp diodes to
ground and all outputs are designed for low-capacitance bus loading in
high-impedance state.
The FCT2827T has balanced output drive with current limiting resistors.
This offers low ground bounce, minimal undershoot and controlled output
fall times-reducing the need for external series terminating resistors.
FCT2827T parts are plug-in replacements for FCT827T parts.
FUNCTIONAL BLOCK DIAGRAM
Y
0
Y
1
Y
2
Y
3
Y
4
Y
5
Y
6
Y
7
Y
8
Y
9
D
0
D
1
D
2
D
3
D
4
D
5
D
6
D
7
D
8
D
9
OE
1
OE
2
INDUSTRIAL TEMPERATURE RANGE
1
c
1999 Integrated Device Technology, Inc.
AUGUST 2000
DSC-5485/-
IDT74FCT2827AT/CT
FAST CMOS 10-BIT BUFFER
INDUSTRIAL TEMPERATURE RANGE
PIN CONFIGURATION
OE
1
D
0
D
1
D
2
D
3
D
4
D
5
D
6
D
7
D
8
D
9
GND
1
2
3
4
5
6
7
8
9
10
11
12
SO24-2
SO24-8
SO24-9
24
23
22
21
20
19
18
17
16
15
14
13
V
CC
Y
0
Y
1
Y
2
Y
3
Y
4
Y
5
Y
6
Y
7
Y
8
Y
9
OE
2
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM(2)
V
TERM(3)
T
STG
I
OUT
Rating
Terminal Voltage with Respect to GND
Terminal Voltage with Respect to GND
Storage Temperature
DC Output Current
Max.
–0.5 to +7
–0.5 to V
CC
+0.5
–65 to +150
–60 to +120
Unit
V
V
°C
mA
8T-link
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
No
terminal voltage may exceed Vcc by +0.5V unless otherwise noted.
2. Inputs and Vcc terminals only.
3. Outputs and I/O terminals only.
CAPACITANCE
(T
A
= +25
O
C, f = 1.0MHz)
Symbol
C
IN
C
OUT
Parameter
(1)
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Typ.
6
8
Max.
10
12
Unit
pF
pF
8T-link
NOTE:
1. This parameter is measured at characterization but not tested.
SOIC/ QSOP/ TSSOP
TOP VIEW
PIN DESCRIPTION
Name
OE
I
D
I
Y
I
I/O
I
I
O
Description
When both are LOW, the outputs are enabled. When
either one or both are HIGH, the outputs are High Z.
10-bit data input.
10-bit data output.
FUNCTION TABLE
(1)
Inputs
OE
1
L
L
H
X
OE
2
L
L
X
H
D
I
L
H
X
X
Outputs
Y
I
L
H
Z
Z
Function
Transparent
Three-State
NOTE:
1. H = HIGH
L = LOW
X = Don't Care
Z = High-Impedance
2
IDT74FCT2827AT/CT
FAST CMOS 10-BIT BUFFER
INDUSTRIAL TEMPERATURE RANGE
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified:
Industrial: T
A
= –40°C to +85°C, V
CC
= 5.0V ± 5%
Symbol
V
IH
V
IL
I
IH
I
IL
I
OZH
I
OZL
I
I
V
IK
V
H
I
CC
Parameter
Input HIGH Level
Input LOW Level
Input HIGH Current
(4)
Input LOW Current
(4)
High Impedance Output Current
(3-State Output pins)
(4)
Input HIGH Current
(4)
Clamp Diode Voltage
Input Hysteresis
Quiescent Power Supply Current
V
CC
= Max., V
I
= V
CC
(Max.)
V
CC
= Min., I
IN
= –18mA
—
V
CC
= Max., V
IN
= GND or V
CC
V
CC
= Max.
Test Conditions
(1)
Guaranteed Logic HIGH Level
Guaranteed Logic LOW Level
V
CC
= Max.
V
I
= 2.7V
V
I
= 0.5V
V
O
= 2.7V
V
O
= 0.5V
Min.
2
—
—
—
—
—
—
—
—
—
Typ.
(2)
—
—
—
—
—
—
—
–0.7
200
0.01
Max.
—
0.8
±1
±1
±1
±1
±1
–1.2
—
1
µA
V
mV
mA
µA
Unit
V
V
µA
OUTPUT DRIVE CHARACTERISTICS
Symbol
I
ODL
I
ODH
V
OH
V
OL
Parameter
Output LOW Current
Output HIGH Current
Output HIGH Voltage
Output LOW Voltage
Test Conditions
(1)
V
CC
= 5V, V
IN
=
V
IH
or V
IL,
V
OUT
= 1.5V
(3)
V
CC
= 5V, V
IN
=
V
IH
or V
IL,
V
OUT
= 1.5V
(3)
V
CC
= Min.
I
OH
= –15mA
I
OL
= 12mA
Min.
16
–16
2.4
—
Typ.
(2)
48
–48
3.3
0.3
Max.
—
—
—
0.5
Unit
mA
mA
V
V
V
IN
= V
IH
or V
IL
V
CC
= Min.
V
IN
= V
IH
or V
IL
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at Vcc = 5.0V, +25°C ambient.
3. Not more than one output should be shorted at one time. Duration of the short circuit test should not exceed one second.
4. The test limit for this parameter is ±5µA at T
A
= –55°C.
3
IDT74FCT2827AT/CT
FAST CMOS 10-BIT BUFFER
INDUSTRIAL TEMPERATURE RANGE
POWER SUPPLY CHARACTERISTICS
Symbol
∆I
CC
I
CCD
Parameter
Quiescent Power Supply Current
TTL Inputs HIGH
Test Conditions
(1)
V
CC
= Max.
V
IN
= 3.4V
(3)
V
CC
= Max.
Outputs Open
OE
1
=
OE
2
= GND
One Input Toggling
50% Duty Cycle
V
CC
= Max.
Outputs Open
fi = 10MHz
50% Duty Cycle
OE
1
=
OE
2
= GND
One Bit Toggling
V
CC
= Max.
Outputs Open
fi = 2.5MHz
50% Duty Cycle
OE
1
=
OE
2
= GND
Eight Bits Toggling
Min.
—
—
Typ.
(2)
0.5
0.06
Max.
2
0.12
Unit
mA
mA/
MHz
Dynamic Power Supply Current
(4)
V
IN
= V
CC
V
IN
= GND
I
C
Total Power Supply Current
(6)
V
IN
= V
CC
V
IN
= GND
V
IN
= 3.4V
V
IN
= GND
V
IN
= V
CC
V
IN
= GND
V
IN
= 3.4V
V
IN
= GND
—
0.6
2.2
mA
—
0.9
3.2
—
1.2
3.4
(5)
—
3.2
11.4
(5)
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 5.0V, +25°C ambient.
3. Per TTL driven input (V
IN
= 3.4V). All other inputs at V
CC
or GND.
4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations.
5. Values for these conditions are examples of the I
CC
formula. These limits are guaranteed but not tested.
6. I
C
= I
QUIESCENT
+ I
INPUTS
+ I
DYNAMIC
I
C
= I
CC
+
∆I
CC
D
H
N
T
+ I
CCD
(f
CP/
2 + f
i
N
i
)
I
CC
= Quiescent Current
∆I
CC
= Power Supply Current for a TTL High Input (V
IN
= 3.4V)
D
H
= Duty Cycle for TTL Inputs High
N
T
= Number of TTL Inputs at D
H
I
CCD
= Dynamic Current Caused by an Input Transition Pair (HLH or LHL)
f
CP
= Clock Frequency for Register Devices (Zero for Non-Register Devices)
f
i
= Input Frequency
N
i
= Number of Inputs at f
i
All currents are in milliamps and all frequencies are in megahertz.
4
IDT74FCT2827AT/CT
FAST CMOS 10-BIT BUFFER
INDUSTRIAL TEMPERATURE RANGE
SWITCHING CHARACTERISTICS OVER OPERATING RANGE
FCT2827AT
Symbol
t
PLH
t
PHL
Parameter
Propagation Delay
D
I
to Y
I
Condition
(1)
C
L
= 50pF
R
L
= 500Ω
C
L
= 300pF
(3)
R
L
= 500Ω
C
L
= 50pF
R
L
= 500Ω
C
L
= 300pF
(3)
R
L
= 500Ω
C
L
= 5pF
(3)
R
L
= 500Ω
C
L
= 50pF
R
L
= 500Ω
Min
.
(2)
1.5
1.5
1.5
1.5
1.5
1.5
Max.
8
15
12
23
9
10
FCT2827CT
Min
.
(2)
1.5
1.5
1.5
1.5
1.5
1.5
Max.
4.4
10
7
14
5.7
6
Unit
ns
ns
ns
ns
ns
ns
t
PZH
t
PZL
Output Enable Time
OE
I
to Y
I
t
PHZ
t
PLZ
Output Disable Time
OE
I
to Y
I
NOTES:
1. See test circuit and waveforms.
2. Minimum limits are guaranteed but not tested on Propagation Delays.
3. These parameters are guaranteed but not tested.
5
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