256KX8 SPI BUS SERIAL EEPROM, PBGA8, HALOGEN FREE AND ROHS COMPLIANT, WLCSP-8
| 参数名称 | 属性值 |
| 是否无铅 | 不含铅 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | ST(意法半导体) |
| 零件包装代码 | BGA |
| 包装说明 | HALOGEN FREE AND ROHS COMPLIANT, WLCSP-8 |
| 针数 | 8 |
| Reach Compliance Code | compliant |
| ECCN代码 | 3A991.B.1.B.1 |
| 最大时钟频率 (fCLK) | 5 MHz |
| 数据保留时间-最小值 | 40 |
| 耐久性 | 1000000 Write/Erase Cycles |
| JESD-30 代码 | R-PBGA-B8 |
| 长度 | 3.556 mm |
| 内存密度 | 2097152 bit |
| 内存集成电路类型 | EEPROM |
| 内存宽度 | 8 |
| 功能数量 | 1 |
| 端子数量 | 8 |
| 字数 | 262144 words |
| 字数代码 | 256000 |
| 工作模式 | SYNCHRONOUS |
| 最高工作温度 | 85 °C |
| 最低工作温度 | -40 °C |
| 组织 | 256KX8 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | VFBGA |
| 封装等效代码 | BGA8(UNSPEC) |
| 封装形状 | RECTANGULAR |
| 封装形式 | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
| 并行/串行 | SERIAL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 电源 | 2/5 V |
| 认证状态 | Not Qualified |
| 座面最大高度 | 0.325 mm |
| 串行总线类型 | SPI |
| 最大待机电流 | 0.000003 A |
| 最大压摆率 | 0.003 mA |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 1.8 V |
| 标称供电电压 (Vsup) | 2.5 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | INDUSTRIAL |
| 端子形式 | BALL |
| 端子节距 | 0.5 mm |
| 端子位置 | BOTTOM |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 宽度 | 2.011 mm |
| 最长写入周期时间 (tWC) | 10 ms |
| 写保护 | HARDWARE/SOFTWARE |
| M95M02-DRCS6G | M95M02-DRMN6TG | M95M02-DRMN6G | M95M02-DRCS6TP | M95M02-DRCS6P | M95M02-DRCS6TG | |
|---|---|---|---|---|---|---|
| 描述 | 256KX8 SPI BUS SERIAL EEPROM, PBGA8, HALOGEN FREE AND ROHS COMPLIANT, WLCSP-8 | 256KX8 SPI BUS SERIAL EEPROM, PDSO8, 0.150 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SOP-8 | 256KX8 SPI BUS SERIAL EEPROM, PDSO8, 0.150 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SOP-8 | 256KX8 SPI BUS SERIAL EEPROM, PBGA8, HALOGEN FREE AND ROHS COMPLIANT, WLCSP-8 | 256KX8 SPI BUS SERIAL EEPROM, PBGA8, HALOGEN FREE AND ROHS COMPLIANT, WLCSP-8 | 256KX8 SPI BUS SERIAL EEPROM, PBGA8, HALOGEN FREE AND ROHS COMPLIANT, WLCSP-8 |
| 是否无铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 |
| 是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 |
| 厂商名称 | ST(意法半导体) | ST(意法半导体) | ST(意法半导体) | ST(意法半导体) | ST(意法半导体) | ST(意法半导体) |
| 零件包装代码 | BGA | SOIC | SOIC | BGA | BGA | BGA |
| 包装说明 | HALOGEN FREE AND ROHS COMPLIANT, WLCSP-8 | SOP, SOP8,.25 | 0.150 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SOP-8 | HALOGEN FREE AND ROHS COMPLIANT, WLCSP-8 | HALOGEN FREE AND ROHS COMPLIANT, WLCSP-8 | HALOGEN FREE AND ROHS COMPLIANT, WLCSP-8 |
| 针数 | 8 | 8 | 8 | 8 | 8 | 8 |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compli | compli |
| ECCN代码 | 3A991.B.1.B.1 | 3A991.B.1.B.1 | 3A991.B.1.B.1 | 3A991.B.1.B.1 | 3A991.B.1.B.1 | 3A991.B.1.B.1 |
| 最大时钟频率 (fCLK) | 5 MHz | 5 MHz | 5 MHz | 5 MHz | 5 MHz | 5 MHz |
| 数据保留时间-最小值 | 40 | 40 | 40 | 40 | 40 | 40 |
| 耐久性 | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles |
| JESD-30 代码 | R-PBGA-B8 | R-PDSO-G8 | R-PDSO-G8 | R-PBGA-B8 | R-PBGA-B8 | R-PBGA-B8 |
| 长度 | 3.556 mm | 4.9 mm | 4.9 mm | 3.556 mm | 3.556 mm | 3.556 mm |
| 内存密度 | 2097152 bit | 2097152 bit | 2097152 bit | 2097152 bit | 2097152 bi | 2097152 bi |
| 内存集成电路类型 | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM |
| 内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 8 | 8 | 8 | 8 | 8 | 8 |
| 字数 | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words |
| 字数代码 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C |
| 最低工作温度 | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C |
| 组织 | 256KX8 | 256KX8 | 256KX8 | 256KX8 | 256KX8 | 256KX8 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | VFBGA | SOP | SOP | VFBGA | VFBGA | VFBGA |
| 封装等效代码 | BGA8(UNSPEC) | SOP8,.25 | SOP8,.25 | BGA8(UNSPEC) | BGA8(UNSPEC) | BGA8(UNSPEC) |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | SMALL OUTLINE | SMALL OUTLINE | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
| 并行/串行 | SERIAL | SERIAL | SERIAL | SERIAL | SERIAL | SERIAL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | 260 | 260 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 电源 | 2/5 V | 2/5 V | 2/5 V | 2/5 V | 2/5 V | 2/5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 0.325 mm | 1.75 mm | 1.75 mm | 0.325 mm | 0.325 mm | 0.325 mm |
| 串行总线类型 | SPI | SPI | SPI | SPI | SPI | SPI |
| 最大待机电流 | 0.000003 A | 0.000003 A | 0.000003 A | 0.000003 A | 0.000003 A | 0.000003 A |
| 最大压摆率 | 0.003 mA | 0.003 mA | 0.003 mA | 0.003 mA | 0.003 mA | 0.003 mA |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
| 标称供电电压 (Vsup) | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V |
| 表面贴装 | YES | YES | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
| 端子形式 | BALL | GULL WING | GULL WING | BALL | BALL | BALL |
| 端子节距 | 0.5 mm | 1.27 mm | 1.27 mm | 0.5 mm | 0.5 mm | 0.5 mm |
| 端子位置 | BOTTOM | DUAL | DUAL | BOTTOM | BOTTOM | BOTTOM |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | 40 | 40 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 宽度 | 2.011 mm | 3.9 mm | 3.9 mm | 2.011 mm | 2.011 mm | 2.011 mm |
| 最长写入周期时间 (tWC) | 10 ms | 10 ms | 10 ms | 10 ms | 10 ms | 10 ms |
| 写保护 | HARDWARE/SOFTWARE | HARDWARE/SOFTWARE | HARDWARE/SOFTWARE | HARDWARE/SOFTWARE | HARDWARE/SOFTWARE | HARDWARE/SOFTWARE |
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