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MKP9V160
Preferred Device
Sidac High Voltage
Bidirectional Triggers
Bidirectional devices designed for direct interface with the ac power
line. Upon reaching the breakover voltage in each direction, the device
switches from a blocking state to a low voltage on−state. Conduction
will continue like a Triac until the main terminal current drops below
the holding current. The plastic axial lead package provides high pulse
current capability at low cost. Glass passivation insures reliable
operation.
Features
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SIDACS ( )
0.9 AMPS RMS, 160 VOLTS
MT1
MT2
•
•
•
•
•
•
•
•
High Pressure Sodium Vapor Lighting
Strobes and Flashers
Ignitors
High Voltage Regulators
Pulse Generators
Used to Trigger Gates of SCR’s and Triacs
Indicates UL Registered
−
File #E116110
Pb−Free Package is Available
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Peak Repetitive Off−State Voltage
(Sine Wave, 50 to 60 Hz, T
J
=
−
40 to 125°C)
On-State Current RMS
(T
L
= 80°C, Lead Length = 3/8″″
All Conduction Angles)
Peak Non−repetitive Surge Current
(60 Hz One Cycle Sine Wave, T
J
= 125°C)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
DRM
,
V
RRM
I
T(RMS)
Value
"90
"0.9
Unit
V
A
DO−41
AXIAL LEAD
CASE 59
STYLE 2
I
TSM
T
J
T
stg
Symbol
R
qJL
T
L
"4.0
−40
to +125
−40
to +150
A
°C
°C
MARKING DIAGRAM
A
MKP
9V160
YYWW
G
G
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
THERMAL CHARACTERISTICS
Rating
Thermal Resistance, Junction−to−Lead
Lead Length = 3/8″
Lead Solder Temperature
(Lead Length
w
1/16″ from Case, 10 s Max)
Max
40
260
Unit
°C/W
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
MKP9V160RL
MKP9V160RLG
Package
Axial Lead*
Axial Lead*
Shipping
†
5000 Tape & Reel
5000 Tape & Reel
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
February, 2006
−
Rev. 1
1
Publication Order Number:
MKP9V160/D
MKP9V160
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
OFF CHARACTERISTICS
Repetitive Peak Off−State Current
(50 to 60 Hz Sine Wave)
ON CHARACTERISTICS
Breakover Voltage
I
BO
= 200
mA
Peak On−State Voltage
(I
TM
= 1 A Peak, Pulse Width
≤
300
ms,
Duty Cycle
≤
2%)
Dynamic Holding Current
(Sine Wave, 50 to 60 Hz, R
L
= 100
W)
Switching Resistance
(Sine Wave, 50 to 60 Hz)
DYNAMIC CHARACTERISTICS
Critical Rate−of−Rise of On−State Current,
Critical Damped Waveform Circuit
(I
PK
= 130 A, Pulse Width = 10
msec)
di/dt
−
120
−
A/ms
V
BO
V
TM
I
H
R
S
150
−
−
0.1
−
1.3
−
−
170
1.5
100
−
V
V
mA
kW
T
J
= 25°C
V
DRM
= 90 V
I
DRM
−
−
5.0
mA
Symbol
Min
Typ
Max
Unit
Voltage Current Characteristic of SIDAC
(Bidirectional Device)
+ Current
Symbol
I
DRM
V
DRM
V
BO
I
BO
I
H
V
TM
I
TM
Parameter
Off State Leakage Current
Off State Repetitive Blocking Voltage
Breakover Voltage
Breakover Current
Holding Current
On State Voltage
Peak on State Current
I
TM
I
H
V
TM
Slope = R
S
I
S
I
DRM
V
DRM
V
S
I
(BO)
+ Voltage
V
(BO)
R
S
+
(V
(BO)
– V
S
)
(I
S
– I
(BO)
)
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2
MKP9V160
TL , MAXIMUM ALLOWABLE LEAD TEMPERATURE (
°
C)
140
IT(RMS) , ON−STATE CURRENT (AMPS)
130
120
110
100
90
80
70
60
50
40
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
20
40
60
80
100
120
140
I
T(RMS)
, ON−STATE CURRENT (AMPS)
T
A
, MAXIMUM AMBIENT TEMPERATURE (°C)
T
J
= 125°C
Sine Wave
Conduction Angle = 180°C
T
L
3
/
″
8
3
/
″
8
1.0
T
J
= 125°C
Sine Wave
Conduction Angle = 180°C
Assembled in PCB
Lead Length =
3
/
8
″
0.8
0.6
0.4
0.2
Figure 1. Maximum Lead Temperature
I T , INSTANTANEOUS ON−STATE CURRENT (AMPS)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0
1.0
2.0
3.0
4.0
5.0
0
T
J
= 25°C
125°C
1.25
PRMS , POWER DISSIPATION (WATTS)
Figure 2. Maximum Ambient Temperature
1.00
T
J
= 25°C
Conduction Angle = 180°C
0.75
0.50
0.25
0.2
0.4
0.6
0.8
1.0
V
T
, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS)
I
T(RMS)
, ON−STATE CURRENT (AMPS)
Figure 3. Typical On−State Voltage
Figure 4. Typical Power Dissipation
THERMAL CHARACTERISTICS
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2
0.5
1.0
2.0
Z
qJL
(t) = R
qJL
•
r(t)
DT
JL
= P
pk
R
qJL
[r(t)]
t
p
TIME
where:
DT
JL
= the increase in junction temperature above the
lead temperature
r(t) = normalized value of transient thermal resistance at
time, t from this figure. For example,
r(t
p
) = normalized value of transient resistance at time t
p
.
5.0
10
20
t, TIME (ms)
50
100
200
The temperature of the lead should be
measured using a thermocouple placed on the
lead as close as possible to the tie point. The
thermal mass connected to the tie point is
normally large enough so that it will not
significantly respond to heat surges generated
in the diode as a result of pulsed operation
once steady−state conditions are achieved.
Using the measured value of T
L
, the junction
temperature may be determined by:
T
J
= T
L
+
DT
JL
500
1.0 k
2.0 k
5.0 k
10 k
Figure 5. Thermal Response
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3
MKP9V160
VBO , BREAKOVER VOLTAGE (NORMALIZED)
1.4
IH , HOLDING CURRENT (NORMALIZED)
1.0
1.2
1.0
0.9
0.8
0.6
0.4
−60
0.8
−60
−40
−20
0
20
40
60
80
100
120
140
−40
−20
0
20
40
60
80
100
120
140
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Typical Breakover Voltage
Figure 7. Typical Holding Current
100
IPK, PEAK CURRENT (AMPS)
10
I
PK
10%
tw
1.0
0.1
1.0
t
w
, PULSE WIDTH (ms)
10
100
Figure 8. Pulse Rating Curve
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