All parameters measure at 5V excitation at room temperature, unless otherwise specified.
All Models
Parameter
Excitation Voltage
Excitation Current
Offset
TC Span
TC Resistance
Bridge Impedance
Operating Temp
Storage Temp
Min.
0
0
SM5470
SM5430
Typ.
5.0
1.5
Max.
10.0
3.0
Units
V
mA
mV
mV
%FS/100°C
%/100°C
kΩ
°C
°C
Notes
-75
-50
-15
33
2.7
-40
-55
-30
0
-19
28
3.3
+25
+50
-24
25
4.0
85
125
1
1
SM5430 Standard Pressure Series
Span (FS Range), PSI (kPa)
5 (34)
15 (103)
30 (207)
60 (414)
100 (689)
Linearity
TC Offset
Burst Pressure
Min.
75
105
115
115
115
-0.2
-5
>5X
Typ.
100
145
165
180
200
+ 0.07
-1
Max.
125
175
195
220
250
+0.2
+5
Units
mV
mV
mV
mV
mV
%FS
%FS/100°C
Rated FS Pressure
Notes
3
3
3
3
3
4
1
2
SM5470 Low Pressure Series Only
Span (FS Range), PSI (kPa)
0.15 (1.03)
0.30 (2.07)
0.80 (5.52)
1.50 (10.3)
3.00 (20.7)
Linearity
TC Offset
Burst Pressure
Notes:
Min.
25
25
25
25
25
-0.3
15X
Typ.
50
50
50
50
50
+ 0.1
+ 12
Max.
85
85
85
85
85
+0.3
Units
mV
mV
mV
mV
mV
%FS
%FS/100°C
Rated FS Pressure
Notes
3
3
3
3
3
4
1
2
1. Measured from 0 to 70°C
2. Sensor die will survive pressure specified for all ranges. Maximum package pressure is 150 PSI.
3. Measured at 5V, constant voltage excitation
4. Defined s best-fit straight line (BFSL); for 0.3 PSI full-scale, linearity is + 0.5%FS. For 0.15 PSI full-scale, linearity is + 2.5%FS.
ORDERING INFORMATION
Pressure Type
A:
Absolute (except 5470)
G:
Gauge
D:
Differential
Available Cap Type
B:
Horizontal Barbed port(s)
C:
Vertical Barbed port(s)
Std. Pressure
Ranges
PSI
5430
5
005
15
015
30
030
60
060
100
100
Low Pressure
Ranges
PSI
5470
0.15
001
0.30
003
0.80
008
1.50
015
3.00
030
SM5470 - 008 - G - B
Rev 1.3 07_06
2004-2006
Silicon Microstructures, Inc.
♦
1701 McCarthy Blvd.
♦
Milpitas, CA 95035 USA
Tel: 408-577-0100
♦
Fax: 408-577-0123
♦
sales@si-micro.com
♦
www.si-micro.com
Pin Out -- SM5430/SM5470
Rev 1.3 07_06
2004-2006
Silicon Microstructures, Inc.
♦
1701 McCarthy Blvd.
♦
Milpitas, CA 95035 USA
Tel: 408-577-0100
♦
Fax: 408-577-0123
♦
sales@si-micro.com
♦
www.si-micro.com
SM5430/SM5470
B- Horizontal Barb Configuration
19.60±0.25
10.26±0.25
1.27±0.04 [TYP]
0.41±0.08
16PL
0.84±0.10
5.54±0.25
0.25±0.02
3.00±0.08
5.00±0.08
Ø1.10
7.52±0.13
10.31±0.20
1
3.00±0.08
DIFFERENTIAL TYPE
4°+3°
-0°
5.54±0.25
3.00±0.08
NOTE:
1) ALL THE DIMENSIONS ARE IN MM
2) GAUGE/ABSOLUTE TYPE DIMENSIONS
ARE SAME AS DIFFERENTIAL TYPE
EXCEPT GAUGE/ABSOLUTE TYPE HAS
ONE SIDE PORT
1
GAUGE / ABSOLUTE TYPE
C- Vertical Barb Configuration
10.26±0.25
1.27±0.04 [TYP]
0.41±0.08
16PL
0.84±0.10
3.00±0.08
5.54±0.25
0.25±0.02
2XØ3.00
7.52±0.13
10.31±0.20
2XØ2.21
2XØ1.24
PIN 1 MARKING
3.00±0.08
1
5.50
4°+3°
-0°
DIFFERENTIAL TYPE
1
10.39±0.25
GAUGE / ABSOLUTE TYPE
NOTE:
1) ALL THE DIMENSIONS ARE IN MM
2) GAUGE/ABSOLUTE TYPE DIMENSIONS
ARE SAME AS DIFFERENTIAL TYPE
EXCEPT GAUGE/ ABSOLUTE TYPE HAS
ONE VERTICAL PORT
Dimensions (in millimeters) -- SM5430/SM5470
Notice:
Silicon Microstructures, Inc. reserves the right to make changes to the product contained in this publication. Silicon Microstructures, Inc. assumes no
responsibility for the use of any circuits described herein, conveys no license under any patent or other right, and makes no representation that the
circuits are free of patent infringement.
While the information in this publication has been checked, no responsibility, however, is assumed for inaccuracies.
Silicon Microstructures, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can
reasonably be expected to cause failure of a life-support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such
1 Introduction
In the mid-1960s, American scientist Maas conducted extensive experimental research on the charging process of open-cell batteries and proposed an acceptable charging curve for ...[详细]
传感器
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