d. Maximum under steady state conditions is 650 °C/W.
Document Number: 73894
S10-2542-Rev. D, 08-Nov-10
www.vishay.com
1
Si1058X
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 1.0 A, dI/dt = 100 A/µs
I
S
= 1.0 A
0.8
10.4
3.7
6.5
3.9
6
1.2
16
5.7
ns
V
nC
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 10 V, R
L
= 15
I
D
1.0 A, V
GEN
= 4.5 V, R
g
= 1
f = 1 MHz
V
DS
= 10 V, V
GS
= 5 V, I
D
= 1.3 A
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 1.3 A
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
380
75
45
3.9
3.51
0.82
0.61
4.3
8
20
13
6
5.6
12
30
18
9
ns
5.9
5.3
nC
pF
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 85 °C
V
DS
=
5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 1.3 A
V
GS
= 2.5 V, I
D
= 1.1 A
V
DS
= 10 V, I
D
= 1.3 A
6
0.076
0.103
5.5
0.091
0.124
0.7
20
18.9
- 3.6
1.55
± 100
1
10
V
mV/°C
V
nA
nA
µA
A
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
2008年7月17～18日，由深圳创意时代主办的“第四届便携式产品设计与电源管理技术研讨会”在深圳隆重召开。为期两天的大会紧紧围绕便携产品设计、便携电源管理两大主题展开，引起了关于便携主题的广泛讨论。国际知名企业TI、ST 、ADI倾情参与，知名行业分析机构IN-Stat China 预测了行业的最新趋势，3M、飞兆、英飞凌、精工、爱国者、中电等国内外著名企业都发表了精彩演讲。 精彩的...[详细]
DSP 与 ARM 处理器
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
