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SBYV28-100

产品描述3.5 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD
产品类别分立半导体    二极管   
文件大小76KB,共4页
制造商Vishay(威世)
官网地址http://www.vishay.com
下载文档 详细参数 全文预览

SBYV28-100概述

3.5 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD

SBYV28-100规格参数

参数名称属性值
Reach Compliance Codecompli
配置SINGLE
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.89 V
最大非重复峰值正向电流90 A
元件数量1
最高工作温度150 °C
最大输出电流3.5 A
最大重复峰值反向电压100 V
表面贴装NO
Base Number Matches1

文档预览

下载PDF文档
SBYV28-50, SBYV28-100, SBYV28-150, SBYV28-200
www.vishay.com
Vishay General Semiconductor
Soft Recovery Ultrafast Plastic Rectifier
FEATURES
Glass passivated pellet chip junction
Ultrafast reverse recovery time
Low forward voltage drop
Low leakage current
Low switching losses, high efficiency
High forward surge capability
Solder dip 275 °C max. 10 s, per JESD 22-B106
Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DO-201AD
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
J
max.
Package
Diode variations
3.5 A
50 V, 100 V, 150 V, 200 V
90 A
20 ns
0.89 V
150 °C
DO-201AD
Single die
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer and telecommunication.
MECHANICAL DATA
Case:
DO-201AD
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes cathode end
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Minimum reverse breakdown voltage at 100 μA
Maximum average forward rectified current
0.375" (9.5 mm) lead lengths at T
L
= 85 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating and storage temperature range
SYMBOL SBYV28-50 SBYV28-100 SBYV28-150 SBYV28-200
V
RRM
V
RMS
V
DC
V
BR
I
F(AV)
I
FSM
T
J
, T
STG
50
35
50
55
100
70
100
110
3.5
A
90
-55 to +150
°C
150
105
150
165
200
140
200
220
V
UNIT
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum
instantaneous
forward voltage
Maximum DC reverse
current at rated DC
blocking voltage
Maximum reverse
recovery time
Typical junction
capacitance
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
4.0 V, 1 MHz
3.5 A
TEST CONDITIONS
T
J
= 25 °C
T
J
= 150 °C
T
A
= 25 °C
T
A
= 100
°C
T
J
= 25 °C
I
R
t
rr
C
J
SYMBOL
V
F (1)
SBYV28-50
SBYV28-100 SBYV28-150 SBYV28-200
1.1
0.89
5.0
300
20
20
μA
V
UNIT
ns
pF
Note
(1)
Pulse test: t = 300 μs pulse, duty cycle
2 %
p
Revision: 19-Feb-16
Document Number: 88737
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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