SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE APPLICATION.
TELEPHONE APPLICATION.
FEATURES
Complementary to PZTA92.
E
B
PZTA42
EPITAXIAL PLANAR NPN TRANSISTOR
A
H
L
2
K
1
3
G
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
*
T
j
T
stg
18
1.5mm. :
RATING
300
300
5.0
500
-500
1
150
-55 150
UNIT
V
J
F
F
1
2
3
V
V
mA
mA
W
DIM
A
B
C
C
MILLIMETERS
_
6.5 + 0.2
_
3.5 + 0.2
1.8 MAX
0.7+0.15/-0.1
_
7 + 0.3
2.3 TYP
0.26+0.09/-0.02
3.0+0.15/-0.1
_
1.75 + 0.25
0.1 MAX
10 MAX
D
D
E
F
G
H
J
K
L
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
* Package Mounted On FR-4 PCB 36
SOT-223
mountina pad for the collector lead min.6cm
2
Marking
Type Name
PZTA42
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
SYMBOL
V
(BR)CBO
V
(BE)CEO
TEST CONDITION
I
C
=100 A, I
E
=0
I
C
=1.0mA, I
B
=0
I
C
=1.0mA, V
CE
=10V
DC Current Gain
* h
FE
I
C
=10mA, V
CE
=10V
I
C
=30mA, V
CE
=10V
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
V
CE(sat)
V
BE(sat)
f
T
C
ob
I
C
=20mA, I
B
=2.0mA
I
C
=20mA, I
B
=2.0mA
V
CE
=20V, I
C
=10mA, f=100MHz
V
CB
=20V, I
E
=0, f=1MHz
MIN.
300
300
40
40
40
-
-
50
-
TYP.
-
-
-
-
-
-
-
-
-
MAX.
-
-
-
-
-
0.5
0.9
-
3.0
V
V
MHz
pF
UNIT
V
V
*Pulse Test : Pulse Width 300 S, Duty Cycle 2.0%
2004. 05. 21
Revision No : 0
1/2
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