PZT965
Elektronische Bauelemente
RoHS Compliant Product
NPN Transistor
Epitaxial Planar
Transistor
SOT-223
Description
The PZT965 is designed for use as
AF output amplifier and flash unit.
REF.
9 6 5
A
C
D
E
I
H
Millimeter
Min.
Max.
6.70
7.30
2.90
3.10
0.02
0.10
0C
10 C
0.60
0.80
0.25
0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min.
Max.
13 T YP.
C
2.30 REF.
6.30
6.70
6.30
6.70
3.30
3.70
3.30
3.70
1.40
1.80
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
Collector-Base Voltage
Ta=25
C
Parameter
Value
40
20
7
5
8
2
-55~+150
Units
V
V
V
A
W
O
o
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Continous)
Collector Current (Peak PT=10mS)
Total Power Dissipation
Junction and Storage Temperature
I
C
P
D
T
J,
T
stg
C
ELECTRICAL CHARACTERISTICS Tamb=25
C
unless otherwise specified
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector Saturation Voltage
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
o
Symbol
BV
CBO
*BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE
(sat)
*h
FE
1
*h
FE
2
fT
C
ob
Min
40
20
7
-
-
-
230
150
-
-
Typ.
-
-
-
-
-
0.35
-
-
150
-
Max
-
-
-
Unit
V
V
V
uA
uA
V
0.1
0.1
1
800
-
-
50
Test Conditions
I
C
= 100µA
I
C
= 1mA
I
E
= 10µA
V
CB
= 60V
V
EB
=7V
I
C
=3A,I
B
=0.1 A
V
CE
= 2 V, I
C
=0.5 A
V
CE
= 2 V, I
C
=2 A
V
CE
= 6 V, I
E
= 50mA
V
CB
= 20 V , f=1MHz
*Pulse width
≦
300
µ
s, Duty Cycle
≦
2%
MH z
pF
Classification of hFE
Rank
Range
R
340~600
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
21-Oct-2009 Rev. B
Page 1 of 2
PZT965
Elektronische Bauelemente
NPN Transistor
Epitaxial Planar Transistor
Characteristics Curve
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
21-Oct-2009 Rev. B
Page 2of 2
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