18A, 80V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
厂商名称 | Renesas(瑞萨电子) |
Reach Compliance Code | not_compliant |
ECCN代码 | EAR99 |
配置 | Single |
最大漏极电流 (Abs) (ID) | 18 A |
最大漏极电流 (ID) | 18 A |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码 | e0 |
工作模式 | ENHANCEMENT MODE |
最高工作温度 | 150 °C |
极性/信道类型 | N-CHANNEL |
最大功率耗散 (Abs) | 75 W |
表面贴装 | NO |
端子面层 | Tin/Lead (Sn/Pb) |
RFP18N08 | RFM18N08 | RFM18N10 | RFP18N10 | |
---|---|---|---|---|
描述 | 18A, 80V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 18A, 80V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | 18A, 100V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | 18A, 100V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 |
厂商名称 | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) |
Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
配置 | Single | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | Single |
最大漏极电流 (Abs) (ID) | 18 A | 18 A | 18 A | 18 A |
最大漏极电流 (ID) | 18 A | 18 A | 18 A | 18 A |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码 | e0 | e0 | e0 | e0 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
最大功率耗散 (Abs) | 75 W | 100 W | 100 W | 75 W |
表面贴装 | NO | NO | NO | NO |
端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |