CYStech Electronics Corp.
N -Channel Logic Level Enhancement Mode Power MOSFET
Spec. No. : C731J3
Issued Date : 2009.07.07
Revised Date :
Page No. : 1/7
MTBA5N10J3
Features
•
Low Gate Charge
•
Simple Drive Requirement
•
Pb-free lead plating & Halogen-free package
BV
DSS
I
D
R
DSON(MAX)
100V
10A
150mΩ
Equivalent Circuit
MTBA5N10J3
Outline
TO-252
G：Gate D：Drain
S：Source
G D S
Absolute Maximum Ratings
(T
C
=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
C
=25°C
Continuous Drain Current @ T
C
=100°C
Pulsed Drain Current
*1
Avalanche Current
Avalanche Energy @ L=0.1mH, I
D
=12A, R
G
=25Ω
Repetitive Avalanche Energy @ L=0.05mH
*2
Total Power Dissipation @T
C
=25℃
Total Power Dissipation @T
C
=100℃
Operating Junction and Storage Temperature Range
Note : *1
.
Pulse width limited by maximum junction temperature
*2. Duty cycle
≤
1%
MTBA5N10J3
V
DS
V
GS
I
D
I
D
I
DM
I
AS
E
AS
E
AR
Pd
Tj, Tstg
100
±30
10
7
40
12
7.2
3.6
35
15
-55~+175
V
A
mJ
W
°C
CYStek Product Specification
CYStech Electronics Corp.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
R
th,j-c
R
th,j-a
Spec. No. : C731J3
Issued Date : 2009.07.07
Revised Date :
Page No. : 2/7
Value
4.2
62.5
Unit
°C/W
°C/W
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
*1
*1
Min.
100
1
-
-
-
10
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
2
-
-
-
-
130
150
8
18.8
3.8
4.5
15
35
25
25
1070
52
40
2
-
-
-
120
520
Max.
-
3
±
100
1
25
-
150
175
-
-
-
-
-
-
-
-
-
-
-
-
10
40
1.3
-
-
Unit
V
V
nA
μA
μA
A
m
Ω
m
Ω
S
nC
Test Conditions
V
GS
=0, I
D
=250μA
V
DS
=V
GS
, I
D
=250μA
V
GS
=
±
30, V
DS
=0
V
DS
=80V, V
GS
=0
V
DS
=70V, V
GS
=0, T
J
=125°C
V
DS
=10V, V
GS
=10V
V
GS
=10V, I
D
=10A
V
GS
=5V, I
D
=10A
V
DS
=5V, I
D
=10A
I
D
=10A, V
DS
=80V, V
GS
=10V
V
DS
=50V, I
D
=1A, V
GS
=10V,
R
G
=6
Ω
G
FS
*1
Dynamic
Qg
*1, 2
Qgs
*1, 2
Qgd
*1, 2
t
d(ON)
*1, 2
tr
*1, 2
t
d(OFF)
*1, 2
t
f
*1, 2
Ciss
Coss
Crss
Rg
Source-Drain Diode
I
S
*1
I
SM
*3
V
SD
*1
trr
Qrr
ns
pF
Ω
A
V
ns
nC
V
GS
=0V, V
DS
=25V, f=1MHz
V
GS
=15mV, V
DS
=0, f=1MHz
I
F
=I
S
, V
GS
=0V
I
F
=10A, dI
F
/dt=100A/μs
Note : *1.Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Ordering Information
Device
MTBA5N10J3
Package
Shipping
TO-252
2500 pcs / Tape & Reel
(Pb-free lead plating & Halogen-free package)
Marking
BA5N10
MTBA5N10J3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Spec. No. : C731J3
Issued Date : 2009.07.07
Revised Date :
Page No. : 3/7
MTBA5N10J3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Spec. No. : C731J3
Issued Date : 2009.07.07
Revised Date :
Page No. : 4/7
MTBA5N10J3
CYStek Product Specification
CYStech Electronics Corp.
Reel Dimension
Spec. No. : C731J3
Issued Date : 2009.07.07
Revised Date :
Page No. : 5/7
Carrier Tape Dimension
MTBA5N10J3
CYStek Product Specification
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