CYStech Electronics Corp.
N -Channel Enhancement Mode Power MOSFET
Spec. No. : C708J3
Issued Date : 2009.04.29
Revised Date :
Page No. : 1/7
MTB60N06J3
Features
•
Low Gate Charge
•
Simple Drive Requirement
•
RoHS compliant & Halogen-free package
BV
DSS
I
D
R
DSON(MAX)
60V
12A
60mΩ
Equivalent Circuit
MTB60N06J3
Outline
TO-252
G：Gate D：Drain
S：Source
G D S
Absolute Maximum Ratings
(T
C
=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
C
=25°C
Continuous Drain Current @ T
C
=100°C
Pulsed Drain Current
*1
Avalanche Current
Avalanche Energy @ L=0.1mH, I
D
=12A, R
G
=25Ω
Repetitive Avalanche Energy @ L=0.05mH
*2
Total Power Dissipation @T
C
=25℃
Total Power Dissipation @T
C
=100℃
Operating Junction and Storage Temperature Range
Note : *1
.
Pulse width limited by maximum junction temperature
*2. Duty cycle
≤
1%
MTB60N06J3
V
DS
V
GS
I
D
I
D
I
DM
I
AS
E
AS
E
AR
Pd
Tj, Tstg
60
±20
12
8
30
12
7.2
3.6
20
10
-55~+175
V
A
mJ
W
°C
CYStek Product Specification
CYStech Electronics Corp.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
R
th,j-c
R
th,j-a
Spec. No. : C708J3
Issued Date : 2009.04.29
Revised Date :
Page No. : 2/7
Value
7.5
80
Unit
°C/W
°C/W
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
V
GS(th)
G
FS
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
*1
*1
Min.
60
1.0
-
-
-
-
12
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
2.0
19
-
-
-
-
53
80
11
2.2
2.4
10
7.5
18
6
913
65
53
2.5
-
-
-
15
8
Max.
-
3.2
-
±
100
1
25
-
60
96
-
-
-
-
-
-
-
-
-
-
-
12
48
1.3
-
-
Unit
V
V
S
nA
μA
μA
A
m
Ω
m
Ω
Test Conditions
V
GS
=0, I
D
=250μA
V
DS
=V
GS
, I
D
=250μA
V
DS
=5V, I
D
=10A
V
GS
=
±
20, V
DS
=0
V
DS
=48V, V
GS
=0
V
DS
=40V, V
GS
=0, Tj=125°C
V
DS
=10V, V
GS
=10V
V
GS
=10V, I
D
=10A
V
GS
=5V, I
D
=8A
*1
Dynamic
Qg
*1, 2
Qgs
*1, 2
Qgd
*1, 2
t
d(ON)
*1, 2
tr
*1, 2
t
d(OFF)
*1, 2
t
f
*1, 2
Ciss
Coss
Crss
Rg
Source-Drain Diode
I
S
*1
I
SM
*3
V
SD
*1
trr
Qrr
nC
I
D
=10A, V
DS
=20V, V
GS
=10V
V
DS
=20V, I
D
=1A, V
GS
=10V,
R
G
=6
Ω
ns
pF
Ω
A
V
ns
nC
V
GS
=0V, V
DS
=20V, f=1MHz
V
GS
=15mV, V
DS
=0, f=1MHz
I
F
=I
S
, V
GS
=0V
I
F
=5A, dI
F
/dt=100A/μs
Note : *1.Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Ordering Information
Device
MTB60N06J3
Package
TO-252
(RoHS compliant & Halogen-free package)
Shipping
2500 pcs / Tape & Reel
Marking
B60N06
MTB60N06J3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
On-Region Characteristics
V
GS
= 10V
7V 6V
5V
4.5V
Spec. No. : C708J3
Issued Date : 2009.04.29
Revised Date :
Page No. : 3/7
30
On-Resistance Variation with Drain Current and Gate Voltage
1.8
V
GS
= 4.0 V
R
DS(ON)
-Normalized
Drain-S
ource On-Resistance
1.6
4.5 V
5.0 V
6.0 V
7.0 V
1.0
0.8
0
6
12
18
I
D
- Drain Current( A )
24
30
10 V
24
I
D
- Drain Current( A )
18
1.4
12
4V
1.2
6
0
0
1
2
V - Drain-S
ource Voltage( V )
DS
3
4
2.2
2.0
R
DS(on)
- Normalized
Drain-S
ource On-Resistance
1.8
On-Resistance Variation with Temperature
I
D
= 10A
V
GS
= 10V
On-Resistance Variation with Gate-to-S
ource Voltage
0.14
0.12
R
DS(ON)
- On-Resistance(
Ω
)
0.10
0.08
0.06
0.04
0.02
T
A
= 25° C
T
A
= 125° C
I
D
= 5 A
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
-25
75 100
0
25
50
T
J
- Junction Temperature (°C)
125
150
175
0
2
4
6
V - Gate-S
ource Voltage( V )
GS
8
10
Transfer Characteristics
20
V
DS
= 5V
16
I
D
- Drain Current( A )
T
A
= -55°C
125°C
12
25°C
Body Diode Forward Voltage Variation with
S
ource Current and Temperature
100
V
GS
= 0V
Is - Reverse Drain Current( A )
10
1
0.1
0.01
0.001
0.0001
T
A
= 125°C
25° C
-55° C
8
4
0
1
4
2
3
V - Gate-S
ource Voltage( V )
GS
5
6
0
0.6
0.2
0.4
0.8
V
SD
- Body Diode Forward Voltage( V )
1.0
1.2
MTB60N06J3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Spec. No. : C708J3
Issued Date : 2009.04.29
Revised Date :
Page No. : 4/7
10
I
D
= 10A
V
GS
- Gate-to-S
ource Voltage(V)
8
Gate C
harge Characteristics
1500
1350
1200
1050
Capacitance(pF
)
900
750
600
450
300
150
Capacitance Characteristics
f = 1MHz
V
GS
= 0 V
V
DS
= 15V
30V
Ciss
6
4
2
0
0
2
4
6
8
Q
g
- Gate Charge( nC)
10
12
14
Coss
0
Crss
10
20
30
V
DS
- Drain-S
ource Voltage( V )
40
50
60
0
Maximum S Operating Area
afe
80
50
100
μ
s
R
DS(ON)
Limit
50
S
ingle Pulse Maximum Power Dissipation
S
ingle Pulse
R
JC
= 7.5° C/ W
θ
T
A
= 25°C
I
D
- Drain Current( A )
1ms
10ms
100ms
1s
10s
DC
P( pk ),Peak Transient Power( W )
40
30
10
20
1
0
0
V = 10V
GS
S
ingle Pulse
R
θ
JC
= 7.5°C W
/
T = 25°C
C
10
0
0.001
1
10
V
DS
- Drain-S
ource Voltage( V )
60
0.01
1
0.1
t
1
,Time ( sec )
10
100
1000
Transient Thermal Response Curve
1
Duty Cycle = 0.5
0.2
r(t),Normalized Effective
Transient Thermal Resistance
0.1
0.1
0.05
0.02
0.01
Notes
:
P
DM
t1
t2
0.01
Single Pulse
1.Duty Cycle,D =
2.R
JC
=7.5° C/ W
θ
t1
t2
3.T - T
C
= P * R
JC
(t)
θ
J
4.R
JC
(t)=r(t) * R
JC
θ
θ
0.001
10
-4
10
-3
10
-2
10
t
1
,Time (sec)
-1
1
10
100
1000
MTB60N06J3
CYStek Product Specification
CYStech Electronics Corp.
Reel Dimension
Spec. No. : C708J3
Issued Date : 2009.04.29
Revised Date :
Page No. : 5/7
Carrier Tape Dimension
MTB60N06J3
CYStek Product Specification
消费电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
