CYStech Electronics Corp.
N -Channel Logic Level Enhancement Mode Power MOSFET
Spec. No. : C863Q8
Issued Date : 2012.12.13
Revised Date :
Page No. : 1/9
MTB55N10Q8
Description
BV
DSS
I
D
R
DSON(TYP)
V
GS
=10V, I
D
=4.5A
V
GS
=4.5V, I
D
=3A
100V
4.5A
55mΩ
58mΩ
The MTB55N10Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications.
Features
•
Low Gate Charge
•
Simple Drive Requirement
•
Pb-free lead plating package
Symbol
MTB55N10Q8
Outline
SOP-8
Pin 1
G：Gate
D：Drain
S：Source
MTB55N10Q8
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @V
GS
=10V, T
A
=25°C
Continuous Drain Current @V
GS
=10V, T
A
=70°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=10mH, I
D
=4.5A, V
GS
=20V, V
DD
=25V
Repetitive Avalanche Energy @ L=0.05mH
T
A
=25℃
Total Power Dissipation
*3
T
A
=70℃
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
E
AR
P
D
Tj, Tstg
Spec. No. : C863Q8
Issued Date : 2012.12.13
Revised Date :
Page No. : 2/9
Limits
100
±20
4.5
3.6
32 *1
4.5
101
0.5 *2
3.1
2
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
R
th,j-c
R
th,j-a
Value
20
40 *3
Unit
°C/W
°C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Duty cycle≤1%.
3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s ; 125°C/W when mounted on minimum copper pad.
The value in any given application depends on the user’s specific board design.
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(ON)
*1
Min.
100
1
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
1.4
-
-
-
55
58
15
16
1.9
6.7
7
4
20
11
Max.
-
2.5
±
100
1
25
75
80
-
-
-
-
-
-
-
-
Unit
V
V
nA
μA
m
Ω
S
nC
Test Conditions
V
GS
=0, I
D
=250μA
V
DS
=V
GS
, I
D
=250μA
V
GS
=
±
20, V
DS
=0
V
DS
=80V, V
GS
=0
V
DS
=80V, V
GS
=0, T
J
=125°C
V
GS
=10V, I
D
=4.5A
V
GS
=4.5V, I
D
=3A
V
DS
=5V, I
D
=3A
I
D
=4.5A, V
DS
=80V, V
GS
=10V
V
DS
=50V, I
D
=4.5A, V
GS
=10V,
R
G
=6
Ω
CYStek Product Specification
G
FS
*1
Dynamic
Qg
*1, 2
Qgs
*1, 2
Qgd
*1, 2
t
d(ON)
*1, 2
tr
*1, 2
t
d(OFF)
*1, 2
t
f
*1, 2
MTB55N10Q8
ns
CYStech Electronics Corp.
Ciss
Coss
Crss
Source-Drain Diode
I
S
*1
I
SM
*3
V
SD
*1
trr
Qrr
-
-
-
-
-
-
-
-
662
71
32
-
-
0.72
30
90
-
-
-
3.5
14
1
-
-
pF
Spec. No. : C863Q8
Issued Date : 2012.12.13
Revised Date :
Page No. : 3/9
V
GS
=0V, V
DS
=25V, f=1MHz
A
V
ns
nC
I
S
=1A, V
GS
=0V
I
F
=3A, dI
F
/dt=100A/μs
Note : *1.Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Ordering Information
Device
MTB55N10Q8-0-T1-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
MTB55N10Q8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
32
28
I
D
, Drain Current (A)
24
20
16
12
8
4
0
0
2
4
6
8
V
DS
, Drain-Source Voltage(V)
10
V
GS
=2V
V
GS
=3V
10V,9V,8V,7V,6V,5V,4V
Spec. No. : C863Q8
Issued Date : 2012.12.13
Revised Date :
Page No. : 4/9
Brekdown Voltage vs Ambient Temperature
1.4
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
1.2
1
0.8
0.6
0.4
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
I
D
=250
μ
A,
V
GS
=0V
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
V
SD
, Source-Drain Voltage(V)
1000
R
DS(on)
, Static Drain-Source On-State
Resistance(mΩ)
V
GS
=2V
V
GS
=0V
1
Tj=25°C
V
GS
=4.5V
0.8
0.6
Tj=150°C
100
V
GS
=2.5V
V
GS
=10V
0.4
0.2
10
0.01
0.1
1
10
I
D
, Drain Current(A)
100
0
2
4
6
8
I
DR
, Reverse Drain Current(A)
10
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
200
R
DS(on)
, Normalized Static Drain-
Source On-State Resistance
2.4
I
D
=4.5A
R
DS(on)
, Static Drain-Source On-
State Resistance(mΩ)
160
120
80
40
0
0
2
4
6
8
V
GS
, Gate-Source Voltage(V)
10
2
1.6
1.2
0.8
0.4
0
-60
V
GS
=10V, I
D
=4.5A
R
DS(ON)
@Tj=25°C : 55mΩ
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
MTB55N10Q8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
V
GS(th)
, Normalized Threshold Voltage
10000
Spec. No. : C863Q8
Issued Date : 2012.12.13
Revised Date :
Page No. : 5/9
Threshold Voltage vs Junction Tempearture
1.4
1.2
1
0.8
0.6
0.4
I
D
=250
μ
A
Capacitance---(pF)
1000
Ciss
C
oss
100
Crss
10
0.1
1
10
V
DS
, Drain-Source Voltage(V)
100
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
100
G
FS
, Forward Transfer Admittance(S)
10
Gate Charge Characteristics
V
DS
=80V
10
V
GS
, Gate-Source Voltage(V)
8
V
DS
=50V
6
1
V
DS
=5V
4
0.1
Ta=25°C
Pulsed
2
I
D
=4.5A
0.01
0.001
0
0.01
0.1
I
D
, Drain Current(A)
1
10
0
5
10
15
Qg, Total Gate Charge(nC)
20
Maximum Safe Operating Area
100
Maximum Drain Current vs JunctionTemperature
5
I
D
, Maximum Drain Current(A)
10
R
DSON
Limited
4.5
100
μ
s
1m
10ms
4
3.5
3
2.5
2
1.5
1
0.5
0
25
50
75
100
125
Tj, Junction Temperature(°C)
150
175
T
A
=25°C, V
GS
=10V, R
θJA
=40°C/W
I
D
, Drain Current(A)
1
0.1
T
A
=25°C, Tj=150°C
V
GS
=10V, R
θ
JA
=125°C/W
Single Pulse
100m
1s
0.01
DC
0.001
0.1
\
10
100
V
DS
, Drain-Source Voltage(V)
1
1000
MTB55N10Q8
CYStek Product Specification
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