ZSR SERIES
2.85 TO 12 VOLT FIXED POSITIVE LOCAL VOLTAGE REGULATOR
DEVICE DESCRIPTION
The ZSR Series three terminal fixed positive voltage
regulators feature internal circuit current limit and
thermal shutdown making the devices difficult to
destroy. The circuit design allows creation of any
custom voltage in the range 2.85 to 12 volts. The
devices are available in a small outline surface mount
package, ideal for applications where space saving is
important, as well as through hole TO92 style
packaging. The devices are suited to local voltage
regulation applications, where problems could be
encountered with distributed single source regulation,
as well as m ore general v oltage regulation
applications.
The ZSR Series show performance characteristics
superior to other local voltage regulators. The initial
output voltage is maintained to within 2.5% with a
quiescent current of typically 350µA. Output voltage
change, with input voltage and load current, is much
lower than competitive devices. The ZSR devices are
completely stable with no external components.
FEATURES
•
2.85 to 12 Volt
•
Output current up to 200mA
•
Tight initial tolerance of 2.5%
•
Low 600 a quiescent current
•
-55 to 125°C temperature range
•
No external components
•
Internal thermal shutdown
•
Internal short circuit current limit
•
Small outline SOT223 package
•
TO92 package
VOLTAGE RANGE
ZSR285
ZSR300
ZSR330
ZSR400
ZSR485
ZSR500
ZSR520
ZSR600
ZSR800
ZSR900
ZSR1000
ZSR1200
2.85V
3.0V
3.3V
4.0V
4.85V
5.0V
5.2V
6.0V
8.0V
9.0V
10.0V
12.0V
Issue 8 - April 2006
1
SEMICONDUCTORS
ZSR SERIES
ABSOLUTE MAXIMUM RATING
Input voltage
Output Current(I
o
)
Operating Temperature
Storage Temperature
20V
200mA
-55 to 125°C
-65 to 150°C
Power Dissipation (T
amb
=25°C)
SOT223
2W(Note 3)
TO92
600mW
ELECTRICAL CHARACTERISTICS
Notes:
1.
The maximum operating input voltage and output
current of the device will be governed by the
maximum power dissipation of the selected package.
Maximum package power dissipation is specified at
25 °C and must be linearly derated to zero at
T
amb
=125°C.
2.
The following data represents pulse test conditions
with junction temperatures as indicated at the
initiation of the test. Continuous operation of the
devices with the stated conditions might exceed the
power dissipation limits of the chosen package.
3.
Maximum power dissipation for the SOT223 and
SO8 packages, is calculated assuming that the device
is mounted on a PCB measuring 2 inches square.
4.
The shut down feature of the device operates if its
temperature exceeds its design limit as might occur
during external faults, short circuits etc. If the
regulator is supplied from an inductive source then a
large voltage transient, on the regulator input, can
result should the shut down circuit operate. It is
advised that a capacitor (1µF or greater) should be
applied across the regulator input to ensure that the
maximum voltage rating of the device is not
exceeded under shutdown conditions.
ZSR285 TEST CONDITIONS
(Unless otherwise stated):T
j
=25°C, I
O
=100mA, V
in
=6.85V
SYMBOL PARAMETER
V
O
Output Voltage
I
O
=1 to 200mA
CONDITIONS
MIN.
2.78
τ
2.736
TYP.
2.85
MAX.
2.92
2.964
2.964
10
5
2
350
40
25
600
100
100
75
48
4.85
I
O
=5.0mA
τ
0.1
mV/°C
62
4.55
UNITS
V
V
V
mV
mV
mV
µA
µA
µA
µV
rms
dB
V
V
in
=4.85 to 20V
2.736
I
O
=1 to 100mA
τ
∆V
O
∆V
O
l
q
∆l
q
V
n
Line Regulation
Load Regulation
Quiescent Current
Quiescent Current
Change
Output Noise Voltage
V =4.85 to 20V
in
I =1 to 200mA
O
I
O
=1 to 100mA
τ
I
O
=1 to 200mA
V
in
=4.85 to 20V
f=10Hz to 10kHz
V
in
=5.85 to 18V
f=120Hz
∆V
in
/∆V
O
Ripple Rejection
V
in
∆V
O
/∆T
Input Voltage Required
To Maintain Regulation
Average Temperature
Coefficient of V
O
=T
j
=-55 to 125°C
Issue 8 - April 2006
SEMICONDUCTORS
2
ZSR SERIES
ZSR300 TEST CONDITIONS
(Unless otherwise stated):T
j
=25°C, I
O
=100mA, V
in
=7V
SYMBOL PARAMETER
V
O
Output Voltage
I
O
=1 to 200mA
V
in
=5 to 20V
I
O
=1 to 100mA
∆V
O
∆V
O
l
q
∆l
q
V
n
Line Regulation
Load Regulation
Quiescent Current
V =5 to 20V
in
CONDITIONS
MIN.
2.92
τ
2.88
2.88
τ
TYP.
3.0
MAX.
3.08
3.12
3.12
UNITS
V
V
V
mV
mV
mV
µA
µA
µA
µV
rms
dB
V
mV/°C
10
5
2
350
40
25
600
100
100
I =1 to 200mA
O
I
O
=1 to 100mA
τ
Quiescent Current Change I
O
=1 to 200mA
V
in
=5 to 20V
Output Noise Voltage
f=10Hz to 10kHz
V
in
=6 to 18V
f=120Hz
48
5
I
O
=5.0mA
τ
0.1
75
62
4.7
∆V
in
/∆V
O
Ripple Rejection
V
in
∆V
O
/∆T
Input Voltage Required To
Maintain Regulation
Average Temperature
Coefficient of V
O
ZSR330 TEST CONDITIONS
(Unless otherwise stated):T
j
=25°C, I
O
=100mA, V
in
=7.3V
SYMBOL PARAMETER
V
O
Output Voltage
I
O
=1 to 200mA
τ
V
in
=5.3 to 20V
I
O
=1 to 100mA
τ
∆V
O
∆V
O
l
q
∆l
q
V
n
Line Regulation
Load Regulation
Quiescent Current
V =5.3 to 20V
in
CONDITIONS
MIN.
3.218
3.168
3.168
TYP.
3.3
MAX.
3.382
3.432
3.432
UNITS
V
V
V
mV
mV
mV
µA
µA
µA
µV
rms
dB
V
mV/°C
7.5
5
2
350
30
25
600
100
100
I =1 to 200mA
O
I
O
=1 to 100mA
τ
Quiescent Current Change I
O
=1 to 200mA
V
in
=5.3 to 20V
Output Noise Voltage
f=10Hz to 10kHz
V
in
=6.3 to 18V
f=120Hz
50
5.3
I
O
=5.0mA
τ
50
64
5
0.1
∆V
in
/∆V
O
Ripple Rejection
V
in
∆V
O
/∆T
Input Voltage Required To
Maintain Regulation
Average Temperature
Coefficient of V
O
=T
j
=-55 to 125°C
Issue 8 - April 2006
3
SEMICONDUCTORS
ZSR SERIES
ZSR400 TEST CONDITIONS
(Unless otherwise stated):T
j
=25°C, I
O
=100mA, V
in
=8V
SYMBOL PARAMETER
V
O
Output Voltage
I
O
=1 to 200mA
V
in
=6 to 20V
I
O
=1 to 100mA
∆V
O
∆V
O
l
q
∆l
q
V
n
Line Regulation
Load Regulation
Quiescent Current
Quiescent Current
Change
Output Noise Voltage
V =6 to 20V
in
CONDITIONS
MIN.
3.9
τ
3.84
3.84
τ
TYP.
4.0
MAX.
4.1
4.16
4.16
UNITS
V
V
V
mV
mV
mV
µA
µA
µA
µV
rms
dB
V
10
5
2
350
40
25
600
100
100
I =1 to 200mA
O
I
O
=1 to 100mA
τ
I
O
=1 to 200mA
V
in
=6 to 20V
f=10Hz to 10kHz
V
in
=7 to 18V
f=120Hz
48
6
75
62
5.3
∆V
in
/∆V
O
Ripple Rejection
V
in
Input Voltage Required
To Maintain Regulation
ZSR485 TEST CONDITIONS
(Unless otherwise stated): T
j
=25°C, I
O
=100mA, V
in
=8.85V
SYMBOL PARAMETER
V
O
Output Voltage
I
O
=1 to 200mA
V
in
=6.8 to 20V
I
O
=1 to 100mA
∆V
O
∆V
O
l
q
∆l
q
V
n
Line Regulation
Load Regulation
Quiescent Current
Quiescent Current
Change
Output Noise Voltage
V =6.85 to 20V
in
CONDITIONS
MIN.
4.729
τ
4.656
4.656
τ
TYP.
4.85
MAX.
4.971
5.044
5.044
UNITS
V
V
V
mV
mV
mV
µA
µA
µA
µV
rms
dB
V
mV/°C
10
5
2
350
40
25
600
100
100
I =1 to 200mA
O
I
O
=1 to 100mA
τ
I
O
=1 to 200mA
V
in
=6.85 to 20V
f=10Hz to 10kHz
V
in
=7.85 to 18V
f=120Hz
50
6.85
I
O
=5.0mA
τ
50
64
6.55
0.1
∆V
in
/∆V
O
Ripple Rejection
V
in
∆V
O
/∆T
Input Voltage Required
To Maintain Regulation
Average Temperature
Coefficient of V
O
=T
j
= -55 to 125°C
Issue 8 - April 2006
SEMICONDUCTORS
4
ZSR SERIES
ZSR1000 TEST CONDITIONS
(Unless otherwise stated): T
j
=25°C, I
O
=100mA, V
in
=14V
SYMBOL PARAMETER
V
O
Output Voltage
I
O
=1 to 200mA
τ
V
in
=12 to 20V
I
O
=1 to 100mA
τ
∆V
O
∆V
O
l
q
∆l
q
V
n
Line Regulation
Load Regulation
Quiescent Current
Quiescent Current Change
Output Noise Voltage
V =12 to 20V
in
CONDITIONS
MIN.
9.75
9.6
9.6
TYP.
10
MAX.
10.25
10.4
10.4
UNITS
V
V
V
mV
mV
mV
µA
µA
µA
µV
rms
dB
V
mV/°C
12
9
3
350
40
30
600
100
100
I =1 to 200mA
O
I
O
=1 to 100mA
τ
I
O
=1 to 200mA
V
in
=12 to 20V
f=10Hz to 10kHz
V
in
=13 to 18V
f=120Hz
43
12
I
O
=5.0mA
τ
150
57
11.7
0.25
∆V
in
/∆V
O
Ripple Rejection
V
in
∆V
O
/∆T
Input Voltage Required To
Maintain Regulation
Average Temperature
Coefficient of V
O
ZSR1200 TEST CONDITIONS
(Unless otherwise stated): T
j
=25°C, I
O
=100mA, V
in
=16V
SYMBOL PARAMETER
V
O
Output Voltage
I
O
=1 to 200mA
τ
V
in
=14 to 20V
I
O
=1 to 100mA
τ
∆V
O
∆V
O
l
q
∆l
q
V
n
Line Regulation
Load Regulation
Quiescent Current
Quiescent Current Change
Output Noise Voltage
V =14 to 20V
in
CONDITIONS
MIN.
11.7
11.52
11.52
TYP.
12
MAX.
12.3
12.48
12.48
UNITS
V
V
V
mV
mV
mV
µA
µA
µA
µV
rms
dB
V
mV/°C
12
9
3
350
40
30
600
100
100
I =1 to 200mA
O
I
O
=1 to 100mA
τ
I
O
=1 to 200mA
V
in
=14 to 20V
f=10Hz to 10kHz
V
in
=15 to 18V
f=120Hz
43
14
I
O
=5.0mA
τ
150
57
13.7
0.25
∆V
in
/∆V
O
Ripple Rejection
V
in
∆V
O
/∆T
Input Voltage Required To
Maintain Regulation
Average Temperature
Coefficient of V
O
τ
=T
j
= -55 to 125 °C
Issue 8 - April 2006
5
SEMICONDUCTORS
嵌入式系统
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