1-Watt Power Amplifier
5 - 6 GHz
V 1.00
MAAP0008
MAAP0008
Features
•
•
•
•
•
U-NII and Hiperlan Applications
Saturated Output Power 30.5 dBm at +7.0 V
Power Added Efficiency 40 Percent
No External RF Matching
4-mm FQFP-N, 16-Lead Package
Functional Schematic
Pin 16
N/C
N/C
N/C
N/C
Pin 1
N/C
RFin
N/C
Description
The MAAP0008 is a two-stage power amplifier
mounted in a standard outline, 16-lead, 4-mm FQFP-N
plastic package, designed specifically for the U-NII,
MMAC, and Hiperlan bands. The MAAP0008 has fully
matched 50 ohms input and output, eliminating the need
for external RF tuning components.
M/A-COM fabricates the MAAP0008 using a self-
aligned gate MESFET process to realize high power
efficiency and small size. The process features full
passivation for performance and reliability.
Vgg
N/C
RFout
N/C
N/C
N/C
Vdd
N/C
N/C
Pin Configuration
Handling Procedures
Please observe the following precautions to avoid damage
to the MAAP0008:
Pin
1, 3, 4 ,5 ,7,
8, 9, 12, 13,
14, 15, 16
2
6
10
Function
NC
Description
No connection
Static Sensitivity
Gallium arsenide integrated circuits are ESD sensitive and
can be damaged by static electricity. Use proper ESD
precautions when handling these devices.
RF
IN
V
dd
RF
OUT
RF input to the amplifier. DC
block on-chip. 50 ohm input.
Positive voltage supply to
both stages
RF output of the amplifier.
DC block on-chip. 50 Ohm
output.
Negative voltage supply to
the gates of both stages
RF & DC ground
Absolute Maximum Ratings
1
Parameter
Max Input Power (5 - 6 GHz)
Operating Voltages
Operating Temperature
Channel Temperature
Storage Temperature
Absolute Maximum
+ 15 dBm
+10 volts
-40 °C to +70 °C
+150 °C
-40 °C to +150 °C
11
Pad
V
gg
GND
1. Exceeding any one or combination of these limits may cause
permanent damage.
1-Watt, 5 GHz Power Amplifier
Electrical Specifications:
Parameter
Frequency
Input VSWR
Gain
P1dB
Saturated Power
Drain Current at Psat
Harmonics 2ƒ
3ƒ
Thermal resistance
Third-Order Intercept
Point
Stability
MAAP0008
V 1.00
T
C
= 40 °C, V
DD
= 7.0 V, I
DQ
= 360 mA
(unless otherwise specified)
Units
GHz
Min.
5.0
1.5:1
dB
dBm
dBm
mA
dBc
dBc
°C/W
dBm
18.0
30.0
19.5
30.5
31.5
500
-40
-70
31
40
550
Typ.
Max.
6.0
2.0:1
Typ. @
V
DD
+ 5 V
1.5:1
19.5
29.0
30.0
500
-40
-70
31
38
Test Conditions
F = 5.825 GHz, Pin = +15 dBm
F = 5.825 GHz, Pin = 0 dBm
F = 5.825 GHz
F = 5.825 GHz, Pin = +15 dBm
F = 5.825 GHz, Pin = +15 dBm
Output Power = 30.5 dBm
+3.0 V < V
DD
< +10.0 V, P
OUT
< +15
dBm, VSWR < 6:1, -25 ºC < T
C
< 70
ºC, RBW=3 MHz max. hold
1
All spurs < -70 dBc
Recommended Operating Conditions
Characteristic
Drain Voltage
Gate Voltage
2
Input Power
Gate Current
Case Temperature
Symbol
V
DD
V
GG
P
IN
I
GG
T
C
Unit
V
V
dBm
mA
°C
Min
4.5
-2.5
Typ
7.0
-2.0
—
Max
8.0
-1.0
15
+4
70
-4
-40
1
25
1. Operation outside of these ranges may reduce product reliability.
2. A 100 E-Series resistor should be used in the gate voltage line.
Operating The MAAP0008
The MAAP0008 is static sensitive. Please handle with
care. To operate the device, follow these steps.
1. Apply V
GG
= -2 V, V
DD
= 0 V.
2. Ramp V
DD
to desired voltage, typically 5 to 7 V.
3. Adjust V
GG
to set I
DQ
, (approximately –2 V).
4. Set RF input.
5.
Power down sequence in reverse. Turn gate
voltage off last.
Specifications subject to change without notice.
n
North America:
Tel. (800) 366-2266, Fax (800) 618-8883
n
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
2
1-Watt, 5 GHz Power Amplifier
Application Information
Sample Board
MAAP0008
V 1.00
C1
R1
Plated Vias
Plated Vias
Via s
C2
Notes on board design
1.
Sample board uses RO4350 e
r
= 3.48 as dielec-
tric for circuit board. Dielectric thickness is not
critical but RFin and RFout transmission lines
should be 50 ohms (w = 22 mil for thickness = 10
mil).
Solder the exposed paddle on the back of the
package to the board. Proper attachment of the
exposed paddle is essential for RF and DC
ground in addition to providing a low thermal re-
sistance.
Case temperature (Tc) is measured as shown on
the application board drawing on the top circuit
board metal as close to the body of the package
as possible.
The board must provide adequate heat sinking to
accommodate the 2.5 W typically dissipated un-
der small signal conditions. Sample board uses
vias in the vicinity of the ground pad to provide a
suitable heat sink connected to the ground plane
of the board as shown above (recommend
?
CA
=
5 °C/W max).
Placement of C1, C2 and R1 are not critical but
use of 1206 for the bypass caps (C1 and C2) is
critical.
2.
3.
4.
5.
Specifications subject to change without notice.
n
North America:
Tel. (800) 366-2266, Fax (800) 618-8883
n
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
3
1-Watt, 5 GHz Power Amplifier
Typical Performance Curves
Gain Vs. Frequency
P
IN
= + 6 dBm, V
DD
= 7 V
24
22
MAAP0008
V 1.00
Gain Vs. Frequency
P
IN
= + 6 dBm, V
DD
= 5 V
24
22
GAIN (dB)
18
16
14
12
10
4.0
4.5
5.0
5.5
- 25 deg. C
50 deg. C
70 deg. C
GAIN (dB)
20
20
18
16
14
12
10
4.0
4.5
5.0
5.5
- 25 deg. C
50 deg. C
70 deg. C
6.0
6.5
6.0
6.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Output Power Vs. Frequency
P
IN
= + 12 dBm, V
DD
= 7 V
32
30
Output Power Vs. Frequency
P
IN
= + 12 dBm, V
DD
= 5 V
32
Output Power (dBm)
30
28
26
24
4.0
4.5
5.0
5.5
Output Power
(dBm)
28
26
24
4.0
4.5
5.0
5.5
- 25 deg. C
50 deg. C
70 deg. C
- 25 deg. C
50 deg. C
70 deg. C
6.0
6.5
6.0
6.5
FREQUENCY (GHz)
FREQUENCY (GHz)
PAE Vs. Frequency
P
IN
= + 12 dBm, V
DD
= 7 V
PAE Vs. Frequency
P
IN
= + 12 dBm, V
DD
= 5 V
45
40
- 25 deg. C
50 deg. C
70 deg. C
45
40
- 25 deg. C
50 deg. C
70 deg. C
PAE (%)
35
30
25
4.0
4.5
5.0
5.5
6.0
6.5
PAE (%)
35
30
25
4.0
4.5
5.0
5.5
6.0
6.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Specifications subject to change without notice.
n
North America:
Tel. (800) 366-2266, Fax (800) 618-8883
n
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
4
1-Watt, 5 GHz Power Amplifier
Typical Performance Curves
Input Return Loss Vs. Frequency
P
IN
= + 12 dBm, V
DD
= 7 V
-3
-6
-3
-6
MAAP0008
V 1.00
Input Return Loss Vs. Frequency
P
IN
= + 12 dBm, V
DD
= 5 V
RETURN LOSS (dB)
-9
-12
-15
-18
-21
-24
-27
4.0
4.5
5.0
5.5
6.0
6.5
- 25 deg. C
50 deg. C
70 deg. C
RETURN LOSS (dB)
-9
-12
-15
-18
-21
-24
-27
4.0
4.5
5.0
5.5
6.0
6.5
- 25 deg. C
50 deg. C
70 deg. C
FREQUENCY (GHz)
FREQUENCY (GHz)
Dissipated Power vs. Case
Temperature
Temperature (Tc)
P
Diss
vs Channel
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
25
50
75
100
125
150
175
Tc (C)
35
Output Power & Gain Vs. Input Power
Freq = 5.80 GHz, V
DD
= 7 V
Pout (dBm), Gain (dB)
30
Pout
Gain
P
Diss
(W)
25
20
15
1
3
5
7
9
11
13
15
Pin (dBm)
1-dB Compression Vs. Frequency
V
DD
= 7 V, I
Dq
= 0.360 A
P1dB, Gain Vs. Quiescent Bias
V
DD
= 7 V, Freq = 5.8 GHz
32
32
30
Gain (dB), P1dB (dBm)
30
28
26
24
22
20
18
0.20
0.22
0.24
0.26
0.28
0.30
0.32
0.34
0.36
P1dB
Gain
P1dB (dBm)
28
P1dB
26
24
5.0
5.2
5.4
5.6
5.8
6.0
Pin (dBm)
IDQ (A)
Specifications subject to change without notice.
n
North America:
Tel. (800) 366-2266, Fax (800) 618-8883
n
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
5
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