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KMMR18R48C-K8

产品描述Rambus DRAM Module, 32MX18, 45ns, CMOS, MICRO, BGA-184
产品类别存储    存储   
文件大小178KB,共10页
制造商SAMSUNG(三星)
官网地址http://www.samsung.com/Products/Semiconductor/
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KMMR18R48C-K8概述

Rambus DRAM Module, 32MX18, 45ns, CMOS, MICRO, BGA-184

KMMR18R48C-K8规格参数

参数名称属性值
厂商名称SAMSUNG(三星)
零件包装代码BGA
包装说明DIMM, DIMM184,40
针数184
Reach Compliance Codeunknown
ECCN代码EAR99
访问模式BLOCK ORIENTED PROTOCOL
最长访问时间45 ns
其他特性SELF REFRESH
最大时钟频率 (fCLK)800 MHz
I/O 类型COMMON
JESD-30 代码R-XDMA-N184
内存密度603979776 bit
内存集成电路类型RAMBUS DRAM MODULE
内存宽度18
功能数量1
端口数量1
端子数量184
字数33554432 words
字数代码32000000
工作模式SYNCHRONOUS
组织32MX18
输出特性3-STATE
封装主体材料UNSPECIFIED
封装代码DIMM
封装等效代码DIMM184,40
封装形状RECTANGULAR
封装形式MICROELECTRONIC ASSEMBLY
电源1.8/2.5,2.5 V
认证状态Not Qualified
自我刷新YES
最大供电电压 (Vsup)2.63 V
最小供电电压 (Vsup)2.37 V
标称供电电压 (Vsup)2.5 V
表面贴装NO
技术CMOS
端子形式NO LEAD
端子节距1 mm
端子位置DUAL

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KMMR18R44(8/G)C
Overview
Preliminary
4/8/16d RIMM
TM
module with 72Mb RDRAMs
Key Timing Parameters/Part Numbers
The following table lists the frequency and latency bins
available from RIMM modules. An optional ‘ L’ designator
followed by ‘ hyphen(-)’ indicates low power modules.
TABLE 1. Part Number by Freq. & Latency
Speed
Organization
I/O Freq.
Binning
MHz
-G6
-K8
-M8
32M x 18
-G6
-K8
-M8
64M x 18
-G6
-K8
-M8
600
800
800
600
800
800
600
800
800
t
rac
(Row
Access
Time) ns
53
45
40
53
45
40
53
45
40
The Rambus
®
RIMM™ module is a general purpose high-
performance memory subsystem suitable for use in a broad
range of applications including computer memory, personal
computers, workstations, and other applications where high
bandwidth and low latency are required.
The Rambus RIMM module consists of 72Mb Direct
Rambus DRAM devices. These are extremely high-speed
CMOS DRAMs organized as 4M words by 18 bits. The use
of Rambus Signaling Level (RSL) technology permits
600MHz or 800MHz transfer rates while using conventional
system and board design technologies. RDRAM devices are
capable of sustained data transfers at 1.25 ns per two bytes
(10ns per 16 bytes).
The RDRAM architecture enables the highest sustained
bandwidth for multiple, simultaneous, randomly addressed,
memory transactions. The separate control and data buses
with independent row and column control yield over 95%
bus efficiency. The RDRAM's 16-banks architecture
supports up to four simultaneous transactions per device.
Part Number
a
16M x 18
KMMR18R44C-G6
KMMR18R44C-K8
KMMR18R44C-M8
KMMR18R48C-G6
KMMR18R48C-K8
KMMR18R48C-M8
KMMR18R4GC-G6
KMMR18R4GC-K8
KMMR18R4GC-M8
Features
High speed 800 and 600MHz RDRAM storage
184 edge connector pads with 1mm pad spacing
Maximum module PCB size : 133.5mm x 34.93mm x
a. -L designator is used for modules with lower self-refresh current
Form Factor
The Rambus RIMM modules are offered in a 184-pad 1mm
edge connector pad pitch form factor suitable for 184 contact
RIMM connectors. The RIMM module is suitable for
desktop and other system applications.
1.37mm (5.21” x 1.375” x 0.05”)
Each RDRAM has 16 banks, for a total of 256, 128 or 64
banks on each 144MB, 72MB or 36MB module respec-
tively
Gold plated edge connector pad contacts
Serial Presence Detect(SPD) support
Operates from a 2.5 volt supply (±5%)
Low power and powerdown self refresh modes
Separate Row and Column buses for higher efficiency
RDRAMs use
µ−
BGA package type
Note: On two sided modules, RDRAMs are also installed on bottem side of PCB.
Figure 1: Rambus RIMM Module without heat spreader
Page 1
Rev.0.9 Apr. 1999

 
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