HGTG20N60A4D
Data Sheet
February 2009
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGTG20N60A4D is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25
o
C and 150
o
C. The IGBT used is the
development type TA49339. The diode used in anti-parallel
is the development type TA49372.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential.
This device has been
optimized for high frequency switch mode power
supplies.
Formerly Developmental Type TA49341.
Features
• >100kHz Operation At 390V, 20A
• 200kHz Operation At 390V, 12A
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . 55ns at T
J
= 125
o
C
• Low Conduction Loss
•
Temperature Compensating
SABER™ Model
www.fairchildsemi.com
Packaging
JEDEC STYLE TO-247
Ordering Information
PART NUMBER
HGTG20N60A4D
PACKAGE
TO-247
BRAND
20N60A4D
COLLECTOR
(FLANGE)
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2009 Fairchild Semiconductor Corporation
HGTG20N60A4D Rev. C1
HGTG20N60A4D
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Diode Continuous Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FM110
Diode Maximum Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
FM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching Safe Operating Area at T
J
= 150
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
HGTG20N60A4D
600
70
40
280
20
80
±20
±30
100A at 600V
290
2.32
-55 to 150
260
UNITS
V
A
A
A
A
A
V
V
W
W/
o
C
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE 1: Pulse width limited by maximum junction temperature.
Electrical Specifications
PARAMETER
T
J
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
CES
I
CES
TEST CONDITIONS
I
C
= 250μA, V
GE
= 0V
V
CE
= 600V
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= 125
o
C
MIN
600
-
-
-
-
4.5
-
100
-
-
-
-
-
-
-
-
-
-
IGBT and Diode at T
J
= 125
o
C,
I
CE
= 20A,
V
CE
= 390V, V
GE
= 15V,
R
G
= 3Ω,
L = 500μH,
Test Circuit Figure 24
-
-
-
-
-
-
-
TYP
-
-
-
1.8
1.6
5.5
-
-
8.6
142
182
15
12
73
32
105
280
150
15
13
105
55
115
510
330
MAX
-
250
3.0
2.7
2.0
7.0
±250
-
-
162
210
-
-
-
-
-
350
200
21
18
135
73
-
600
500
UNITS
V
μA
mA
V
V
V
nA
A
V
nC
nC
ns
ns
ns
ns
μJ
μJ
μJ
ns
ns
ns
ns
μJ
μJ
μJ
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= 20A,
V
GE
= 15V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
GE(TH)
I
GES
SSOA
V
GEP
Q
g(ON)
I
C
= 250μA, V
CE
= 600V
V
GE
=
±20V
T
J
= 150
o
C, R
G
= 3Ω, V
GE
= 15V,
L = 100μH, V
CE
= 600V
I
C
= 20A, V
CE
= 300V
I
C
= 20A,
V
CE
= 300V
V
GE
= 15V
V
GE
= 20V
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
IGBT and Diode at T
J
= 25
o
C,
I
CE
= 20A,
V
CE
= 390V,
V
GE
= 15V,
R
G
= 3Ω,
L = 500μH,
Test Circuit Figure 24
©2009 Fairchild Semiconductor Corporation
HGTG20N60A4D Rev. C1
HGTG20N60A4D
Electrical Specifications
PARAMETER
Diode Forward Voltage
Diode Reverse Recovery Time
T
J
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
V
EC
t
rr
TEST CONDITIONS
I
EC
= 20A
I
EC
= 20A, dI
EC
/dt = 200A/μs
I
EC
= 1A, dI
EC
/dt = 200A/μs
Thermal Resistance Junction To Case
R
θJC
IGBT
Diode
NOTE:
1. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 20.
MIN
-
-
-
-
-
TYP
2.3
35
26
-
-
MAX
-
-
-
0.43
1.9
UNITS
V
ns
ns
o
C/W
o
C/W
Typical Performance Curves
100
I
CE
, DC COLLECTOR CURRENT (A)
DIE CAPABILITY
80
PACKAGE LIMIT
Unless Otherwise Specified
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
120
100
80
60
40
20
0
V
GE
= 15V
T
J
= 150
o
C, R
G
= 3Ω, V
GE
= 15V, L = 100μH
60
40
20
0
25
50
75
100
125
150
0
100
200
300
400
500
600
700
T
C
, CASE TEMPERATURE (
o
C)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
f
MAX
, OPERATING FREQUENCY (kHz)
T
C
75
o
C
300
V
GE
15V
V
CE
= 390V, R
G
= 3Ω, T
J
= 125
o
C
I
SC
12
10
8
6
4
2
0
400
350
300
250
200
150
100
15
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
100 f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
ÐêÐðJC
= 0.43
o
C/W, SEE NO
T
J
= 125
o
C, R
G
= 3Ω, L = 500μH, V
CE
= 390V
40
5
10
20
30
40
50
t
SC
10
11
12
13
14
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
GE
, GATE TO EMITTER VOLTAGE (V)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
©2009 Fairchild Semiconductor Corporation
HGTG20N60A4D Rev. C1
I
SC
, PEAK SHORT CIRCUIT CURRENT (A)
500
t
SC
, SHORT CIRCUIT WITHSTAND TIME (μs)
14
450
HGTG20N60A4D
Typical Performance Curves
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
100
DUTY CYCLE < 0.5%, V
GE
= 12V
PULSE DURATION = 250μs
Unless Otherwise Specified
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
100
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250μs
80
80
60
60
40
T
J
= 125
o
C
T
J
= 150
o
C
T
J
= 25
o
C
40
T
J
= 125
o
C
20
T
J
= 150
o
C
T
J
= 25
o
C
20
0
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
1400
E
OFF
, TURN-OFF ENERGY LOSS (μJ)
E
ON2
, TURN-ON ENERGY LOSS (μJ)
R
G
= 3Ω, L = 500μH, V
CE
= 390V
1200
1000
800
600
400
200
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
0
5
15
20
25
30
35
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
40
T
J
= 125
o
C, V
GE
= 12V, V
GE
= 15V
800
R
G
= 3Ω, L = 500μH, V
CE
= 390V
700
600
500
400
300
200
100
0
5
10
15
20
25
30
35
40
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V OR 15V
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
22
t
d(ON)I
, TURN-ON DELAY TIME (ns)
R
G
= 3Ω, L = 500μH, V
CE
= 390V
20
18
16
14
12
10
8
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
36
R
G
= 3Ω, L = 500μH, V
CE
= 390V
32
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 12V
t
rI
, RISE TIME (ns)
28
24
20
16
12
8
4
5
10
15
20
25
30
35
40
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
5
10
15
T
J
= 25
o
C OR T
J
= 125
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 12V
20
25
30
35
40
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
©2009 Fairchild Semiconductor Corporation
HGTG20N60A4D Rev. C1
HGTG20N60A4D
Typical Performance Curves
120
t
d(OFF)I
, TURN-OFF DELAY TIME (ns)
R
G
= 3Ω, L = 500μH, V
CE
= 390V
110
100
90
80
V
GE
= 12V, V
GE
= 15V, T
J
= 25
o
C
70
60
t
fI
, FALL TIME (ns)
V
GE
= 12V, V
GE
= 15V, T
J
= 125
o
C
72
64
56
48
40
32
24
5
10
15
20
25
30
35
40
16
5
10
15
20
25
30
35
40
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V OR 15V
Unless Otherwise Specified
(Continued)
80
R
G
= 3Ω, L = 500μH, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
16
200
160
120
DUTY CYCLE < 0.5%, V
CE
= 10V
PULSE DURATION = 250μs
V
GE
, GATE TO EMITTER VOLTAGE (V)
240
I
G(REF)
= 1mA, R
L
= 15Ω, T
J
= 25
o
C
I
G(REF)
= 1mA, R
L
= 15Ω, T
J
= 25
o
C
14
12
10
8
6
4
2
0
V
CE
= 200V
V
CE
= 600V
V
CE
= 400V
T
J
= 25
o
C
80
40
0
6
7
8
9
10
11
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
T
J
= 125
o
C
T
J
= -55
o
C
0
20
40
60
80
100
120
140
160
Q
G
, GATE CHARGE (nC)
FIGURE 13. TRANSFER CHARACTERISTIC
E
TOTAL
, TOTAL SWITCHING ENERGY LOSS (mJ)
E
TOTAL
, TOTAL SWITCHING ENERGY LOSS (mJ)
FIGURE 14. GATE CHARGE WAVEFORMS
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
25
50
75
100
125
150
I
CE
= 20A
I
CE
= 30A
R
G
= 3Ω, L = 500μH, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
T
J
= 125
o
C, L = 500μH, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
10
I
CE
= 30A
1
I
CE
= 20A
I
CE
= 10A
I
CE
= 10A
0.1
3
10
100
R
G
, GATE RESISTANCE (Ω)
1000
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
©2009 Fairchild Semiconductor Corporation
HGTG20N60A4D Rev. C1
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