CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
PARAMETER
T
J
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
CES
BV
ECS
I
CES
TEST CONDITIONS
I
C
= 250µA, V
GE
= 0V
I
C
= 10mA, V
GE
= 0V
V
CE
= 600V
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= 125
o
C
MIN
600
15
-
-
-
-
4.5
-
100
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
1.8
1.6
5.5
-
-
8.6
142
182
15
12
73
32
105
280
150
MAX
-
-
250
2.0
2.7
2.0
7.0
±250
-
-
162
210
-
-
-
-
-
350
200
UNITS
V
V
µA
mA
V
V
V
nA
A
V
nC
nC
ns
ns
ns
ns
µJ
µJ
µJ
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= 20A,
V
GE
= 15V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
GE(TH)
I
GES
SSOA
V
GEP
Q
g(ON)
I
C
= 250µA, V
CE
= 600V
V
GE
=
±20V
T
J
= 150
o
C, R
G
= 3Ω, V
GE
= 15V
L = 100µH, V
CE
= 600V
I
C
= 20A, V
CE
= 300V
I
C
= 20A,
V
CE
= 300V
V
GE
= 15V
V
GE
= 20V
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
IGBT and Diode at T
J
= 25
o
C
I
CE
= 20A
V
CE
= 390V
V
GE
=15V
R
G
= 3Ω
L = 500µH
Test Circuit (Figure 20)
2
HGTG20N60A4, HGTP20N60A4
Electrical Specifications
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
Thermal Resistance Junction To Case
NOTES:
2. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 20.
T
J
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
R
θJC
TEST CONDITIONS
IGBT and Diode at T
J
= 125
o
C
I
CE
= 20A
V
CE
= 390V
V
GE
= 15V
R
G
= 3Ω
L = 500µH
Test Circuit (Figure 20)
MIN
-
-
-
-
-
-
-
-
TYP
15
13
105
55
115
510
330
-
MAX
21
18
135
73
-
600
500
0.43
UNITS
ns
ns
ns
ns
µJ
µJ
µJ
o
C/W
Typical Performance Curves
100
I
CE
, DC COLLECTOR CURRENT (A)
DIE CAPABILITY
80
PACKAGE LIMIT
Unless Otherwise Specified
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
GE
= 15V
120
100
80
60
40
20
0
0
T
J
= 150
o
C, R
G
= 3Ω, V
GE
= 15V, L = 100µH
60
40
20
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
100
200
300
400
500
600
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
700
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
500
f
MAX
, OPERATING FREQUENCY (kHz)
T
C
75
o
C
300
V
GE
15V
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
t
SC
, SHORT CIRCUIT WITHSTAND TIME (µs)
V
CE
= 390V, R
G
= 3Ω, T
J
= 125
o
C
I
SC
12
10
8
6
4
2
0
400
350
300
250
200
150
100
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
100 f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
ØJC
= 0.43
o
C/W, SEE NOTES
T
J
= 125
o
C, R
G
= 3Ω, L = 500µH, V
CE
= 390V
40
5
10
20
30
40
50
t
SC
10
11
12
13
14
15
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
GE
, GATE TO EMITTER VOLTAGE (V)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
3
I
SC
, PEAK SHORT CIRCUIT CURRENT (A)
14
450
HGTG20N60A4, HGTP20N60A4
Typical Performance Curves
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
100
DUTY CYCLE < 0.5%, V
GE
= 12V
PULSE DURATION = 250µs
Unless Otherwise Specified
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
100
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250µs
80
80
60
60
40
T
J
= 125
o
C
20
T
J
= 150
o
C
0
T
J
= 25
o
C
40
T
J
= 125
o
C
20
T
J
= 150
o
C
T
J
= 25
o
C
0
0
0.4
1.6
2.0
2.4
2.8
0.8
1.2
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
3.2
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
1400
E
ON2
, TURN-ON ENERGY LOSS (µJ)
1200
1000
800
600
400
200
0
E
OFF
, TURN-OFF ENERGY LOSS (µJ)
R
G
= 3Ω, L = 500µH, V
CE
= 390V
800
R
G
= 3Ω, L = 500µH, V
CE
= 390V
700
600
500
400
300
200
100
0
5
10
15
20
T
J
= 25
o
C, V
GE
= 12V OR 15V
25
30
35
40
T
J
= 125
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
5
10
15
20
25
30
35
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
40
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
22
t
d(ON)I
, TURN-ON DELAY TIME (ns)
R
G
= 3Ω, L = 500µH, V
CE
= 390V
20
18
16
14
12
10
8
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 12V
t
rI
, RISE TIME (ns)
36
R
G
= 3Ω, L = 500µH, V
CE
= 390V
32
28
24
20
16
12
8
4
5
10
15
20
25
30
35
40
5
10
15
20
25
30
35
40
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
T
J
= 25
o
C OR T
J
= 125
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 12V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
4
HGTG20N60A4, HGTP20N60A4
Typical Performance Curves
120
t
d(OFF)I
, TURN-OFF DELAY TIME (ns)
R
G
= 3Ω, L = 500µH, V
CE
= 390V
110
100
90
80
V
GE
= 12V, V
GE
= 15V, T
J
= 25
o
C
70
24
60
5
10
15
20
25
30
35
40
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
16
5
10
15
20
25
30
35
40
t
fI
, FALL TIME (ns)
V
GE
= 12V, V
GE
= 15V, T
J
= 125
o
C
72
64
56
48
40
32
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V OR 15V
Unless Otherwise Specified
(Continued)
80
R
G
= 3Ω, L = 500µH, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
240
200
160
120
80
40
0
6
7
8
9
10
11
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, V
CE
= 10V
PULSE DURATION = 250µs
V
GE
, GATE TO EMITTER VOLTAGE (V)
16
14
12
10
8
6
4
2
0
0
I
G(REF)
= 1mA, R
L
= 15Ω, T
J
= 25
o
C
V
CE
= 600V
V
CE
= 400V
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= -55
o
C
V
CE
= 200V
20
40
60
80
100
120
140
160
Q
G
, GATE CHARGE (nC)
FIGURE 13. TRANSFER CHARACTERISTIC
E
TOTAL
, TOTAL SWITCHING ENERGY LOSS (mJ)
E
TOTAL
, TOTAL SWITCHING ENERGY LOSS (mJ)
FIGURE 14. GATE CHARGE WAVEFORMS
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
25
R
G
= 3Ω, L = 500µH, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
T
J
= 125
o
C, L = 500µH, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
10
I
CE
= 30A
I
CE
= 30A
1
I
CE
= 20A
I
CE
= 10A
I
CE
= 20A
I
CE
= 10A
0.1
3
50
75
100
125
150
10
100
R
G
, GATE RESISTANCE (Ω)
1000
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
从全球来看，智能电视在设备互联接口、内容服务接口、应用程序开发接口、系统安全可信技术等方面的标准尚未统一，厂商采用不同的操作系统和内容接口，各自的应用互不兼容，对产业整体发展造成障碍，在应用丰富度上也很欠缺。近日国内一些家电厂商主办智能电视开发论坛，力图吸引更多的开发者参与进来，从这一点来看，目前还是家电厂商较为主动地在推动智能电视标准化以及各类应用的开发。 TV OS成产业角逐焦点 ...[详细]
无线连接
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
