JMnic
Product Specification
Silicon NPN Power Transistors
2SC4706
DESCRIPTION
・With
TO-3PN package
・High
voltage switching transistor
APPLICATIONS
・For
switching regulator and general
purpose applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
900
600
7
14
28
7
130
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
JMnic
Product Specification
Silicon NPN Power Transistors
2SC4706
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
OB
PARAMETER
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=10mA ; I
B
=0
V
CB
=800V; I
E
=0
V
EB
=7V; I
C
=0
I
C
=7A ; V
CE
=4V
I
C
=7A ; I
B
=1.4A
I
C
=7A ; I
B
=1.4A
V
CE
=12V;I
E
=-1.5A
V
CB
=10V;f=1MHz
6
160
10
MIN
600
0.1
0.1
25
0.5
1.2
V
V
MHz
pF
TYP.
MAX
UNIT
V
mA
mA
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=7A;R
L
=35.7Ω
I
B1
=1.05A;I
B2
=-3.5A
V
CC
=250V
1.0
5.0
0.7
μs
μs
μs
2
JMnic
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC4706
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
JMnic
Product Specification
Silicon NPN Power Transistors
2SC4706
4
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