The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 31 January 2004.
INCH-POUND
MIL-PRF-19500/599D
31 October 2003
SUPERSEDING
MIL-PRF-19500/599C
30 December 1997
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTORS,
P-CHANNEL, SILICON TYPE 2N7335
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for quad P-channel, enhancement-mode,
MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type as
specified in MIL-PRF-19500, with avalanche energy ratings (E
AS
and E
AR
) and maximum avalanche current (I
AR
).
Two levels of product assurance for each unencapsulated device type die (element evaluation).
1.2 Physical dimensions. See figures 1 (MO-036AB) and 2 for JANHC and JANKC die dimensions.
* 1.3 Unless otherwise specified, maximum ratings (T
A
= +25
°
C).
Type
P
T
(1)
T
C
= +25
°
C
(free air)
W
V
GS
I
D1
(2) (3)
T
C
= +25
°
C
I
D2
(2)
T
C
= +100
°
C
I
S
V dc
±
20
A dc
-.75
A dc
-0.50
A dc
-.75
2N7335
1.4
E
AS
E
AR
I
AR
(2)
I
DM
(4)
T
J
and T
STG
Max r
DS(on)
(1)
V
GS
= 10 V dc, I
D
= I
D2
T
J
= +25
°
C
T
J
= +150
°
C
Ω
1.4
Ω
2.5
R
θ
JA1
maximum
(1 die)
°
C/W
90
R
θ
JA2
maximum
(4 die)
°
C/W
50
R
θ
JC
maximum
(1 die)
°
C/W
17
mJ
75
mJ
.14
A
-.75
A(pk)
-3.0
°
C
-55 to +150
Derate linearly 0.011 W/
°
C for T
C
> +25
°
C.
The following formula derives the maximum theoretical I
D
limit. I
D
is limited by package and internal wires
and may be limited by pin diameter:
T
JM
- T
C
I
D
=
(
R
θ
JC
)
x
(
R
DS
( on ) at T
JM
)
(3) See figure 3, maximum drain current graph.
(4) I
DM
= 4 x I
D1
as calculated in note 3.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,
Post Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
(1)
(2)
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
MIL-PRF-19500/599D
1.4 Primary electrical characteristics at T
A
= +25
°
C.
Max r
DS(on)1
(1)
V
GS
= 10 V dc
I
D
= I
D2
T
J
= +25
°
C
Type
Min V
(BR)DSS
V
GS
= 0 V
I
D
= 1 mA dc
V
GS(th)1
V
DS
≥
V
GS
I
D
= 0.25 mA
Max I
DSS1
V
GS
= 0 V
V
DS
= 80 percent of
rated V
DS
µ
A dc
V dc
V dc
Min
Max
-4.0
Ω
2N7335
-100
-2.0
-25
1.4
(1) Pulsed (see 4.5.1).
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this
specification, whether or not they are listed.
2.2 Government documents.
* 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and
supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
DEPARTMENT OF DEFENSE
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the
Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue,
Philadelphia, PA 19111-5094.)
* 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
2
MIL-PRF-19500/599D
LL
1
* FIGURE 1. Dimensions and configuration (MO-036AB).
3
MIL-PRF-19500/599D
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.105
.690
.290
.280
.025
.125
.000
.175
.770
.325
.310
.055
.175
.030
2.67
17.53
7.37
7.11
0.64
3.18
0.00
4.45
19.56
8.26
7.87
1.40
4.45
0.76
5, 6
5, 6
10
11
11
Symbol
Notes
BH
BL
BW
BW
1
LH
LL
LL
1
LS
LS
1
LT
LW
LW
1
N
R
S
α
11
.300 TP
.100 TP
.008
.015
.038
14
.010
.030
0
°
.095
15
°
.012
.021
.060
7.62 TP
2.54 TP
0.203
0.381
0.97
14
0.25
0.76
0
°
2.41
15
°
0.305
0.533
1.52
8
7
NOTES:
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
Dimensions are in inches.
Millimeters are given for general information only.
Refer to applicable symbol list.
Dimensioning and tolerancing in accordance with ASME Y14.5.
Leads within
±
.005 in. (0.13 mm) radius of True Position (TP) at gauge plane with maximum material
condition and unit installed.
LS
1
and LS applies in zone LL
2
when unit installed.
α
applies to spread leads prior to installation.
N is the number of terminal positions.
Outlines on which the seating plane is coincident with the base plane (A
1
= 0), terminals lead standoffs
are not required, and LW
1
may equal LW along any part of the lead above the seating/base plane.
BW
1
does not include particles of package materials.
This dimension shall be measured with the device seated in the seating plane gauge JEDEC Outline
No. GS-3.
* FIGURE 1. Dimensions and configuration (MO-036AB) - Continued.
4
MIL-PRF-19500/599D
Inches
.018
.019
.025
.070
mm
0.46
0.48
0.64
1.78
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Unless otherwise specified, tolerance is
±
.005 inch (0.13 mm).
4. The physical characteristics of the die thickness are .0187 inch (0.474 mm). The back metals are chromium,
nickel, and silver. The top metal is aluminum and the back contact is the drain.
* FIGURE 2. JANHCA and JANKCA die dimensions.
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
