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SB3200HFAMP

产品描述Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, DO-27, 2 PIN
产品类别分立半导体    二极管   
文件大小276KB,共4页
制造商Fagor Electrónica
下载文档 详细参数 全文预览

SB3200HFAMP概述

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, DO-27, 2 PIN

SB3200HFAMP规格参数

参数名称属性值
包装说明DO-27, 2 PIN
Reach Compliance Codecompli
ECCN代码EAR99
其他特性FREE WHEELING DIODE, LOW POWER LOSS
应用EFFICIENCY
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.95 V
JEDEC-95代码DO-201AD
JESD-30 代码O-PALF-W2
最大非重复峰值正向电流80 A
元件数量1
相数1
端子数量2
最高工作温度150 °C
最低工作温度-65 °C
最大输出电流3 A
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
最大重复峰值反向电压200 V
最大反向电流100 µA
表面贴装NO
技术SCHOTTKY
端子形式WIRE
端子位置AXIAL
Base Number Matches1

文档预览

下载PDF文档
SB320 - SB3200
3.0 Amp. Schottky Barrier Rectifier
Voltage
20 V to 200 V
Current
3.0 A
DO-201AD (DO-27)
FEATURES
• Low power losses, high efficiency
• High surge current capability
• High frequency operation
• Guarding for overvoltage protection
• Low forward voltage drop
• Solder dip 260ºC, 10s
• Component in accordance to RoHS 2011/65/EU
and WEEE 2002/96/EC
MECHANICAL DATA
• Case
:
DO-201AD (DO-27). Epoxy meets UL 94V-0
flammability rating.
• Polarity
:
Color band denotes cathode end.
• Terminals
:
Matte tin plated leads, solderable per
MIL-STD-750 Method 2026, J-STD-002 and JESD22-B102.
Consumer grade, meets JESD 201 class 1A whisker test
TYPICAL APPLICATIONS
Used in low voltage high frequency inverters, freewheeling,
dc-to-dc converters, and polarity protection applications.
Maximum Ratings and Electrical Characteristics at 25 ºC
SB320 SB340 SB350 SB360 SB390 SB3100 SB3150 SB3200
Marking Code
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
C
j
T
j
T
stg
Maximum Recurrent Peak Reverse Voltage (V)
Maximum RMS Voltage (V)
Maximum DC Blocking Voltage (V)
Maximum Average Forward Rectified Current
(See graphic)
8.3 ms.Peak Forward Surge Current
(Jedec Method)
SB320 SB340 SB350 SB360 SB390 SB3100 SB3150 SB3200
20
14
20
40
28
40
50
35
50
60
42
60
3.0 A
80 A
90
63
90
100
70
100
150
105
150
200
140
200
Typical Junction Capacitance
Storage Temperature Range
(Note 2)
200 pF
-65 to +125 °C
130 pF
-65 to +150 °C
90 pF
-65 to +150 °C
Operating Temperature Range
Electrical Characteristics at Tamb = 25 °C
V
F
I
R
R
th (j-a)
R
th (j-c)
Maximum Instantaneous Forward Voltage
(Note 1)
I
F
= 3.0 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance
Tj = 25 °C
Tj =125°C
(Note 2)
(Note 3)
0.55 V
0.5 mA
10 mA
0.70 V
5 mA
50 °C/W
15 °C/W
0.85 V
0.1 mA
2.0 mA
0.95 V
Notes: 1. Pulse Test: 300µ Pulse Width, 1% Duty Cycle
2. Thermal Resistance from Junction to Case per diode
3. Pulse test: Pulse width
£
40ms
www.fagorelectronica.com
Document Name: sb3
Version: May-12
Page Number: 1/4

 
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