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JANTX2N6794

产品描述Power Field-Effect Transistor, 1.5A I(D), 500V, 3.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
产品类别分立半导体    晶体管   
文件大小357KB,共29页
制造商Infineon(英飞凌)
官网地址http://www.infineon.com/
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JANTX2N6794概述

Power Field-Effect Transistor, 1.5A I(D), 500V, 3.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

JANTX2N6794规格参数

参数名称属性值
是否Rohs认证不符合
包装说明TO-39, 3 PIN
Reach Compliance Codecompli
其他特性AVALANCHE RATED
雪崩能效等级(Eas)0.242 mJ
配置SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压500 V
最大漏极电流 (Abs) (ID)1.5 A
最大漏极电流 (ID)1.5 A
最大漏源导通电阻3.1 Ω
FET 技术METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码TO-205AF
JESD-30 代码O-MBCY-W3
JESD-609代码e0
元件数量1
端子数量3
工作模式ENHANCEMENT MODE
最高工作温度150 °C
封装主体材料METAL
封装形状ROUND
封装形式CYLINDRICAL
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型N-CHANNEL
最大功率耗散 (Abs)20 W
最大脉冲漏极电流 (IDM)6 A
认证状态Qualified
参考标准MIL-19500/555
表面贴装NO
端子面层Tin/Lead (Sn/Pb)
端子形式WIRE
端子位置BOTTOM
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用SWITCHING
晶体管元件材料SILICON
Base Number Matches1

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The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 1 June 2013.
INCH-POUND
MIL-PRF-19500/555L
17 April 2013
SUPERSEDING
MIL-PRF-19500/555K
11 February 2010
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON,
TYPES 2N6788, 2N6788U, 2N6790, 2N6790U, 2N6792, 2N6792U, 2N6794, AND 2N6794U,
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for an N-channel, enhancement-mode,
MOSFET, power transistor. Four levels of product assurance are provided for each device type as specified in
MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.
1.2 Physical dimensions. See figures 1 (TO-205AF), 2 (LCC), and figures 3, 4, 5, 6, and 7 for JANHC and JANKC
(die) dimensions.
1.3 Maximum ratings. (Unless otherwise specified, T
A
= +25°C).
Type
P
T
T
A
= +25°C
W
2N6788, 2N6788U
2N6790, 2N6790U
2N6792, 2N6792U
2N6794, 2N6794U
P
T
(1)
T
C
= +25°C
W
2N6788
2N6790
2N6792
2N6794
2N6788U
2N6790U
2N6792U
2N6794U
20
20
20
20
14
14
14
14
6.25
6.25
6.25
6.25
8.93
8.93
8.93
8.93
0.8
0.8
0.8
0.8
R
θ
JC
(2)
°C/W
A dc
6.0
3.5
2.0
1.5
4.5
2.8
1.8
1.4
A dc
3.5
2.25
1.25
1.0
2.8
1.8
1.13
0.88
A dc
6.0
3.5
2.0
1.5
4.5
2.8
1.8
1.4
A (pk)
24
14
8
6
18
11
7.2
5.6
V
DS
V
DG
V
GS
V
DS
and V
DG
70,000 ft. altitude
V dc
100
200
400
500
V dc
100
200
400
500
V dc
±20
±20
±20
±20
I
D2
T
C
= +100°C
I
S
300
300
I
DM
(5)
Type
I
D1
(3) (4)
T
C
= +25°C
T
J
and T
STG
°C
-55°
to
+150°
See notes on next page.
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dla.mil.
Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at
https://assist.dla.mil/.
AMSC N/A
FSC 5961

 
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