Datasheet> 器件分类 > 分立半导体> 晶体管> JANTXV2N6847U

JANTXV2N6847U: 产品描述Power Field-Effect Transistor, 2.1A I(D), 200V, 1.725ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18; 产品类别分立半导体晶体管; 文件大小239KB，共21页; 制造商Infineon(英飞凌); 官网地址http://www.infineon.com/

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JANTXV2N6847U概述

Power Field-Effect Transistor, 2.1A I(D), 200V, 1.725ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18

JANTXV2N6847U规格参数

参数名称	属性值
是否Rohs认证	不符合
包装说明	CHIP CARRIER, R-CQCC-N15
Reach Compliance Code	compli
ECCN代码	EAR99
雪崩能效等级（Eas）	180 mJ
外壳连接	SOURCE
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	200 V
最大漏极电流 (Abs) (ID)	2.5 A
最大漏极电流 (ID)	2.1 A
最大漏源导通电阻	1.725 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-CQCC-N15
JESD-609代码	e0
元件数量	1
端子数量	15
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装形状	RECTANGULAR
封装形式	CHIP CARRIER
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	P-CHANNEL
最大功率耗散 (Abs)	20 W
最大脉冲漏极电流 (IDM)	8.4 A
认证状态	Qualified
参考标准	MIL-19500/563
表面贴装	YES
端子面层	Tin/Lead (Sn/Pb)
端子形式	NO LEAD
端子位置	QUAD
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	SWITCHING
晶体管元件材料	SILICON
Base Number Matches	1

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The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 9 February 2013.

INCH-POUND

MIL-PRF-19500/563G

9 November 2012

SUPERSEDING

MIL-PRF-19500/563F

5 November 2003

* PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON,

TYPES 2N6845, 2N6845U, 2N6847, AND 2N6847U,

JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall consist of

this specification sheet and

MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for a P-Channel, enhancement-mode,

MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type as

specified in

MIL-PRF-19500.

Two levels of product assurance are provided for each unencapsulated device type.

1.2 Physical dimensions. See

figure 1,

TO-205AF (formerly TO-39),

(LCC), and

figures 3

and

for JANHC and

JANKC die dimensions.

* 1.3 Maximum ratings. Unless otherwise specified, T

= +25°C.

Type

PT (1)

TC =

+25°C

2N6845, U

2N6847, U

TA =

+25°C

0.8

6.25

θJC

(2)

°C/W

V dc

-100

-200

V dc

-100

-200

V dc

±20

A dc

-4.0

-2.5

A dc

-2.6

-1.6

A dc

-4.0

-2.5

A(pk)

-16

-10

VDS

VDG

VGS

ID1 (3) (4)

ID2 (3)

TC = +25°C TC = +100°C

IDM

(5)

TJ and

TSTG

°C

-55 to +150

(1)

* (2)

(3)

Derate linearly 0.16 W/°C for T

> +25°C.

See

figure 5,

thermal impedance curves.

The following formula derives the maximum theoretical I

limit. I

is limited by package and internal wires

and may be limited by pin diameter:

(

- T

)

(

( on ) at T

)

(4)

(5)

See

figure 6,

maximum drain current graph.

= 4 x I

as calculated in note 2.

* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,

ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to

Semiconductor@dla.mil.

Since contact

information can change, you may want to verify the currency of this address information using the ASSIST

Online database at

https://assist.dla.mil/.

AMSC N/A

FSC 5961

JANTXV2N6847U相似产品对比

	JANTXV2N6847U	JANTX2N6847	JANTXV2N6847	JANTX2N6845U	JANTXV2N6845U
描述	Power Field-Effect Transistor, 2.1A I(D), 200V, 1.725ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18	Power Field-Effect Transistor, 2.5A I(D), 200V, 1.725ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN	Power Field-Effect Transistor, 2.5A I(D), 200V, 1.725ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN	Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LCC-18	Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LCC-18
是否Rohs认证	不符合	不符合	不符合	不符合	不符合
包装说明	CHIP CARRIER, R-CQCC-N15	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CHIP CARRIER, R-CQCC-N15	CHIP CARRIER, R-CQCC-N15
Reach Compliance Code	compli	compli	compli	unknown	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99
Base Number Matches	1	1	1	1	1
雪崩能效等级（Eas）	180 mJ	180 mJ	180 mJ	-	115 mJ
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	200 V	200 V	200 V	-	100 V
最大漏极电流 (Abs) (ID)	2.5 A	2.5 A	2.5 A	-	4 A
最大漏极电流 (ID)	2.1 A	2.5 A	2.5 A	-	3.5 A
最大漏源导通电阻	1.725 Ω	1.725 Ω	1.725 Ω	-	0.69 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-CQCC-N15	O-MBCY-W3	O-MBCY-W3	-	R-CQCC-N15
JESD-609代码	e0	e0	e0	-	e0
元件数量	1	1	1	-	1
端子数量	15	3	3	-	15
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	-	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C	150 °C	-	150 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED	METAL	METAL	-	CERAMIC, METAL-SEALED COFIRED
封装形状	RECTANGULAR	ROUND	ROUND	-	RECTANGULAR
封装形式	CHIP CARRIER	CYLINDRICAL	CYLINDRICAL	-	CHIP CARRIER
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED
极性/信道类型	P-CHANNEL	P-CHANNEL	P-CHANNEL	-	P-CHANNEL
最大功率耗散 (Abs)	20 W	20 W	20 W	-	20 W
最大脉冲漏极电流 (IDM)	8.4 A	10 A	10 A	-	14 A
认证状态	Qualified	Qualified	Qualified	-	Qualified
参考标准	MIL-19500/563	MIL-19500/563	MIL-19500/563	-	MIL-19500/563
表面贴装	YES	NO	NO	-	YES
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)
端子形式	NO LEAD	WIRE	WIRE	-	NO LEAD
端子位置	QUAD	BOTTOM	BOTTOM	-	QUAD
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED
晶体管应用	SWITCHING	SWITCHING	SWITCHING	-	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	-	SILICON

JANTXV2N6847U

JANTXV2N6847U概述

JANTXV2N6847U规格参数

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