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IDT29FCT52DTSO

产品描述Registered Bus Transceiver, FCT Series, 1-Func, 8-Bit, True Output, CMOS, PDSO24, SOIC-24
产品类别逻辑    逻辑   
文件大小105KB,共7页
制造商IDT (Integrated Device Technology)
下载文档 详细参数 全文预览

IDT29FCT52DTSO概述

Registered Bus Transceiver, FCT Series, 1-Func, 8-Bit, True Output, CMOS, PDSO24, SOIC-24

IDT29FCT52DTSO规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称IDT (Integrated Device Technology)
零件包装代码SOIC
包装说明SOIC-24
针数24
Reach Compliance Codenot_compliant
其他特性WITH INDEPENDENT OUTPUT ENABLE FOR EACH DIRECTION; WITH CLOCK ENABLE
控制类型INDEPENDENT CONTROL
计数方向BIDIRECTIONAL
系列FCT
JESD-30 代码R-PDSO-G24
JESD-609代码e0
长度15.4 mm
负载电容(CL)50 pF
逻辑集成电路类型REGISTERED BUS TRANSCEIVER
最大I(ol)0.064 A
湿度敏感等级1
位数8
功能数量1
端口数量2
端子数量24
最高工作温度85 °C
最低工作温度-40 °C
输出特性3-STATE
输出极性TRUE
封装主体材料PLASTIC/EPOXY
封装代码SOP
封装等效代码SOP24,.4
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)225
电源5 V
Prop。Delay @ Nom-Sup4.5 ns
传播延迟(tpd)4.5 ns
认证状态Not Qualified
座面最大高度2.65 mm
最大供电电压 (Vsup)5.25 V
最小供电电压 (Vsup)4.75 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Tin/Lead (Sn/Pb)
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
处于峰值回流温度下的最长时间30
翻译N/A
触发器类型POSITIVE EDGE
宽度7.5 mm

IDT29FCT52DTSO文档预览

IDT29FCT52AT/BT/CT
FAST CMOS OCTAL REGISTERED TRANSCEIVER
INDUSTRIAL TEMPERATURE RANGE
FAST CMOS
OCTAL REGISTERED
TRANSCEIVER
IDT29FCT52AT/BT/CT
FEATURES:
Low input and output leakage
≤1µ
A (max.)
CMOS power levels
True TTL input and output compatibility
V
OH
= 3.3V (typ.)
V
OL
= 0.3V (typ.)
Meets or exceeds JEDEC standard 18 specifications
Available in SOIC, SSOP, and QSOP packages
A, B, and C speed grades
High drive outputs (-15mA I
OH
, 64mA I
OL
)
Power off disable outputs permit “live insertion”
DESCRIPTION:
The IDT29FCT52T is an 8-bit registered transceiver built using an
advanced dual metal CMOS technology. Two 8-bit back-to-back registers
store data flowing in both directions between two bidirectional buses.
Separate clock, clock enable and 3-state output enable signals are provided
for each register. Both A outputs and B outputs are guaranteed to sink 64mA.
FUNCTIONAL BLOCK DIAGRAM
CPA
CEA
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
D
0
CE
D
1
D
2
D
3
D
4
D
5
D
6
D
7
A
Reg.
CP
Q
0
Q
1
Q
2
Q
3
Q
4
Q
5
Q
6
Q
7
OEB
B
0
B
1
B
2
B
3
B
4
B
5
B
6
B
7
Q
0
Q
1
Q
2
Q
3
Q
4
Q
5
Q
6
Q
7
CE
OEA
B
Reg.
D
0
D
1
D
2
D
3
D
4
D
5
D
6
CP D
7
CPB
CEB
INDUSTRIAL TEMPERATURE RANGE
1
c
1999 Integrated Device Technology, Inc.
AUGUST 2000
DSC-5483/-
IDT29FCT52AT/BT/CT
FAST CMOS OCTAL REGISTERED TRANSCEIVER
INDUSTRIAL TEMPERATURE RANGE
PIN CONFIGURATION
B
7
B
6
B
5
B
4
B
3
B
2
B
1
B
0
OEB
CPA
CEA
GND
1
2
3
4
5
6
7
8
9
10
11
12
SO24-2
SO24-7
SO24-8
ABSOLUTE MAXIMUM RATINGS
Symbol
V
TERM(2)
Rating
Terminal Voltage with Respect to GND
Storage Temperature
DC Output Current
Max.
–0.5 to +7
–65 to +150
–65 to +120
V
CC
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
OEA
CPB
CEB
(1)
Unit
V
°C
mA
24
23
22
21
20
19
18
17
16
15
14
13
T
STG
I
OUT
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
2. All device terminals.
CAPACITANCE
(T
A
= +25
O
C, f = 1.0MHz)
Symbol
C
IN
C
OUT
Parameter
(1)
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Typ.
6
8
Max.
10
12
Unit
pF
pF
8T-link
NOTE:
1. This parameter is measured at characterization but not tested.
SOIC/ SSOP/ QSOP
TOP VIEW
REGISTER FUNCTION TABLE
(1)
(Applies to A or B Register)
D
X
L
H
Inputs
CP
X
CE
H
L
L
Internal
Q
NC
L
H
Function
Hold Data
Load Data
NOTE:
1. H = HIGH Voltage Level
L = LOW Voltage Level
X = Don’t Care
NC = No Change
= LOW-to-HIGH Transition
OUTPUT CONTROL
(1)
Internal
OE
H
L
L
Q
X
L
H
Y-Outputs
Z
L
H
Function
Disable Outputs
Enable Outputs
NOTE:
1. H = HIGH Voltage Level
L = LOW Voltage Level
X = Don’t Care
Z = High-Impedance
2
IDT29FCT52AT/BT/CT
FAST CMOS OCTAL REGISTERED TRANSCEIVER
INDUSTRIAL TEMPERATURE RANGE
PIN DESCRIPTION
Name
A
0-7
B
0-7
CPA
CEA
OEB
CPB
CEB
OEA
I/O
I/O
I/O
I
I
I
I
I
I
Description
Eight bidirectional lines carrying the A Register inputs or B Register outputs.
Eight bidirectional lines carrying the B Register inputs or A Register outputs.
Clock for the A Register. When
CEA
is LOW, data is entered into the A Register on the LOW-to-HIGH transition of the CPA signal.
Clock Enable for the A Register. When
CEA
is LOW, data is entered into the A Register on the LOW-to-HIGH transition of the CPA signal. When
CEA
is HIGH, the A Register holds its contents, regardless of CPA signal transitions.
Output Enable for the A Register. When
OEB
is LOW, the A Register outputs are enabled onto the B
0-7
lines. When
OEB
is HIGH, the B
0-7
outputs
are in the high-impedance state.
Clock for the B Register. When
CEB
is LOW, data is entered into the B Register on the LOW-to-HIGH transition of the CPB signal.
Clock Enable for the B Register. When
CEB
is LOW, data is entered into the B Register on the LOW-to-HIGH transition of the CPB signal. When
CEB
is HIGH, the B Register holds its contents, regardless of CPB signal transitions.
Output Enable for the B Register. When
OEA
is LOW, the B Register outputs are enabled onto the A
0-7
lines. When
OEA
is HIGH, the A
0-7
outputs
are in the high-impedance state.
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified:
Industrial: T
A
= -40°C to +85°C, V
CC
= 5.0V ± 5%
Symbol
V
IH
V
IL
I
IH
I
IL
I
OZH
I
OZL
I
I
V
IK
V
H
I
CC
Parameter
Input HIGH Level
Input LOW Level
Input HIGH Current
(4)
Input LOW Current
(4)
High Impedance Output Current
(3-State Output pins)
(4)
Input HIGH Current
(4)
Clamp Diode Voltage
Input Hysteresis
Quiescent Power Supply Current
V
CC
= Max., V
I
= V
CC
(Max.)
V
CC
= Min., I
IN
= –18mA
V
CC
= 3V, V
IN
= GND or V
CC
V
CC
= Max.
Test Conditions
(1)
Guaranteed Logic HIGH Level
Guaranteed Logic LOW Level
V
CC
= Max.
V
I
= 2.7V
V
I
= 0.5V
V
O
= 2.7V
V
O
= 0.5V
Min.
2
Typ.
(2)
–0.7
200
0.01
Max.
0.8
±1
±1
±1
±1
±1
–1.2
1
µA
V
mV
mA
Unit
V
V
µA
OUTPUT DRIVE CHARACTERISTICS
Symbol
V
OH
V
OL
I
OS
I
OFF
Parameter
Output HIGH Voltage
Output LOW Voltage
Short Circuit Current
Input/Output Power Off Leakage
(5)
V
CC
= Min.
V
IN
= V
IH
or V
IL
V
CC
= Min.
V
IN
= V
IH
or V
IL
V
CC
= Max., V
O
= GND
(3)
V
CC
= 0V, V
IN
or V
O
4.5V
–60
–120
–225
±1
mA
µA
Test Conditions
(1)
I
OH
= -8mA
I
OH
= -15mA
I
OL
= 64mA
Min.
2.4
2
Typ.
(2)
3.3
3
0.3
Max.
0.55
V
Unit
V
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 5.0V, +25°C ambient.
3. Not more than one output should be shorted at one time. Duration of the short circuit test should not exceed one second.
4. The test limit for this parameter is ±5µA at T
A
= -55°C.
5. This parameter is guaranteed but not tested.
3
IDT29FCT52AT/BT/CT
FAST CMOS OCTAL REGISTERED TRANSCEIVER
INDUSTRIAL TEMPERATURE RANGE
POWER SUPPLY CHARACTERISTICS
Symbol
∆I
CC
I
CCD
Parameter
Quiescent Power Supply Current
TTL Inputs HIGH
Dynamic Power Supply Current
(4)
Test Conditions
(1)
V
CC
= Max.
V
IN
= 3.4V
(3)
V
CC
= Max.
Outputs Open
OE
A
or
OE
B
= GND
One Input Toggling
50% Duty Cycle
V
CC
= Max.
Outputs Open
f
CP
= 10MHz
50% Duty Cycle
OE
A
or
OE
B
= GND
One Bit Toggling
at fi = 5MHz
50% Duty Cycle
V
CC
= Max.
Outputs Open
f
CP
= 10MHz
50% Duty Cycle
OE
A
or
OE
B
= GND
Eight Bits Toggling
at fi = 2.5MHz
50% Duty Cycle
Min.
Typ.
(2)
0.5
0.15
Max.
2
0.25
Unit
mA
mA/
MHz
V
IN
= V
CC
V
IN
= GND
I
C
Total Power Supply Current
(6)
V
IN
= V
CC
V
IN
= GND
1.5
3.5
mA
V
IN
= 3.4V
V
IN
= GND
2
5.5
V
IN
= V
CC
V
IN
= GND
3.8
7.3
(5)
V
IN
= 3.4V
V
IN
= GND
6
16.3
(5)
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 5.0V, +25°C ambient.
3. Per TTL driven input (V
IN
= 3.4V). All other inputs at V
CC
or GND.
4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations.
5. Values for these conditions are examples of the I
CC
formula. These limits are guaranteed but not tested.
6. I
C
= I
QUIESCENT
+ I
INPUTS
+ I
DYNAMIC
I
C
= I
CC
+
∆I
CC
D
H
N
T
+ I
CCD
(f
CP/
2 + f
i
N
i
)
I
CC
= Quiescent Current
∆I
CC
= Power Supply Current for a TTL High Input (V
IN
= 3.4V)
D
H
= Duty Cycle for TTL Inputs High
N
T
= Number of TTL Inputs at D
H
I
CCD
= Dynamic Current Caused by an Input Transition Pair (HLH or LHL)
f
CP
= Clock Frequency for Register Devices (Zero for Non-Register Devices)
f
i
= Input Frequency
N
i
= Number of Inputs at f
i
All currents are in milliamps and all frequencies are in megahertz.
4
IDT29FCT52AT/BT/CT
FAST CMOS OCTAL REGISTERED TRANSCEIVER
INDUSTRIAL TEMPERATURE RANGE
(1)
29FCT52CT
Min
.
(2)
2
1.5
1.5
2.5
1.5
3
2
3
Max.
6.3
7
6.5
Unit
ns
ns
ns
ns
ns
ns
ns
ns
SWITCHING CHARACTERISTICS OVER OPERATING RANGE
29FCT52AT
Symbol
t
PLH
t
PHL
t
PZH
t
PZL
t
PHZ
t
PLZ
t
SU
t
H
t
SU
t
H
t
W
Parameter
Propagation Delay
CPA, CPB to An, Bn
Output Enable Time
OEA
or
OEB
to An, Bn
Output Disable Time
OEA
or
OEB
to An, Bn
Set-up Time, HIGH or LOW
An, Bn to CPA, CPB
Hold Time, HIGH or LOW
An, Bn to CPA, CPB
Set-up Time, HIGH or LOW
CEA, CEB
to CPA, CPB
Hold Time, HIGH or LOW
CEA, CEB
to CPA, CPB
Clock Pulse Width HIGH or LOW
(3)
Condition
(1)
C
L
= 50pF
R
L
= 500Ω
Min
.
(2)
2
1.5
1.5
2.5
2
3
2
3
Max.
10
10.5
10
29FCT52BT
Min
.
(2)
2
1.5
1.5
2.5
1.5
3
2
3
Max.
7.5
8
7.5
NOTES:
1. See test circuit and waveforms.
2. Minimum limits are guaranteed but not tested on Propagation Delays.
3. This parameter is guaranteed but not tested.
5
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