HSMBJSAC5.0 thru HSMBJSAC75, e3
500 WATT LOW CAPACITANCE
TRANSIENT VOLTAGE SUPPRESSOR
SCOTTSDALE DIVISION
DESCRIPTION
The HSMBJSAC t
ransient voltage suppressor (TVS) series rated at 500
APPEARANCE
WWW .
Microsemi
.C
OM
Watts provides an added rectifier element as shown in Figure 4 to achieve
low capacitance in applications for data or signal lines. The low capacitance
rating of less than 30 pF may be used for protecting higher frequency
applications in inductive switching environments or electrical systems
involving secondary lightning effects per IEC61000-4-5 as well as
RTCA/DO-160D or ARINC 429 for airborne avionics. If bidirectional
protection is needed, two HSMBJSAC devices in anti-parallel configuration
are required as shown in Figure 6. With their very fast response time, they
also provide ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4
respectively.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
DO-214AA
See package notes
FEATURES
•
•
•
•
•
Unidirectional low-capacitance TVS series (for
bidirectional see Figure 6)
Suppresses transient up to 500 Watts Peak Pulse
Power @ 10/1000 µs
Improved performance in low capacitance of 30 pF
Economical small plastic surface mount with robust axial
subassembly package
Optional 100%
screening for avionics grade
is
available by adding MA prefix to part number for added
100% temperature cycle -55
o
C to +125
o
C (10X) as well
as surge (3X) and 24 hours HTRB with post test V
Z
& I
R
Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, JANTXV, and JANS are also
available by adding MQ, MX, MV, or MSP prefixes
respectively to part number, e.g. MXHSMBJSAC5.0,
MVHSMBJSAC18, etc.
Moisture classification is Level 1 with no dry pack
required per IPC/JEDEC J-STD-020B
Also available in axial-leaded packages with part
numbers (SAC5.0 thru SAC50)
RoHS Compliant devices available by adding “e3” suffix
•
•
APPLICATIONS / BENEFITS
Low Capacitance for data-line protection to 10 MHz
Protection for aircraft fast data rate lines per select
waveforms in RTCA/DO-160D (see MicroNote 130
for Waveform 4 and 5A capability) & ARINC 429
with bit rates of 100 kb/s (per ARINC 429, Part 1,
par. 2.4.1.1)
ESD and EFT protection per IEC61000-4-2 and
IEC61000-4-4 respectively
Secondary lightning protection per IEC61000-4-5
with 42 Ohms source impedance:
Class 1: HSMBJSAC5.0 to HSMBJSAC75
Class 2: HSMBJSAC5.0 to HSMBJSAC45
Class 3: HSMBJSAC5.0 to HSMBJSAC22
Class 4: HSMBJSAC5.0 to HSMBJSAC10
Secondary lightning protection per IEC61000-4-5
with 12 Ohms source impedance
Class 1: HSMBJSAC5.0 to HSMBJSAC26
Class 2: HSMBJSAC5.0 to HSMBJSAC15
Class 3: HSMBJSAC5.0 to HSMBJSAC7.0
•
•
•
•
•
•
•
MAXIMUM RATINGS
•
•
•
•
•
Peak Pulse Power Dissipation at 25
o
C: 500 Watts @
10/1000
μs
with repetition rate of 0.01% or less*
Steady State Power Dissipation*: 2.5 Watts @ T
L
=+75
o
C
Clamping Speed (0 volts to V
(BR)
Min.) less than 5
nanoseconds.
Operating and Storage Temperature: -65
o
C to +150
o
C
Solder temperatures: 260
o
C for 10 s maximum
•
•
•
•
•
•
MECHANICAL AND PACKAGING
CASE: Void Free Transfer Molded Thermosetting
Plastic package meeting UL94V-0
FINISH: Tin-Lead or RoHS Compliant matte-Tin
plating solderable per MIL-STD-750, method 2026
POLARITY: Cathode (TVS) Marked with Band
MARKING: Part number without HSMBJ prefix (ie.
SAC5.0, SAC5.0e3, etc)
WEIGHT: 0.1 Grams (Approx.)
See package dimensions on last page
HSMBJSAC5.0 thru
HSMBJSAC75,e3
* TVS devices are not typically used for dc power dissipation and are instead operated < V
WM
(rated standoff voltage) except for transients
that briefly drive the device into avalanche breakdown (V
BR
to V
C
region) of the TVS element. Also see Figures 5 and 6 for further
protection details in rated peak pulse power for unidirectional and bidirectional configurations respectively.
Copyright
©
2005
10-12-2005 REV G
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
HSMBJSAC5.0 thru HSMBJSAC75, e3
500 WATT LOW CAPACITANCE
TRANSIENT VOLTAGE SUPPRESSOR
SCOTTSDALE DIVISION
WWW .
Microsemi
.C
OM
ELECTRICAL CHARACTERISTICS @ 25
o
C
MICROSEMI
PART NUMBER
REVERSE
STAND-OFF
VOLTAGE
(Note 1)
V
WM
Volts
5.0
6.0
7.0
8.0
8.5
10
12
15
18
22
26
36
45
50
75
BREAKDOWN
VOLTAGE
@ I
(BR)
1.0mA
V
(BR)
Volts
Min.
7.60
7.90
8.33
8.89
9.44
11.10
13.30
16.70
20.00
24.40
28.90
40.0
50.00
55.50
83.3
MAXIMUM MAXIMUM
STANDBY CLAMPING
CURRENT VOLTAGE
@V
WM
I
P
= 5.0A*
I
D
V
C
μA
300
300
300
100
50
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
Volts
10.0
11.2
12.6
13.4
14.0
16.3
19.0
23.6
28.8
35.4
42.3
60.0
77.0
88.0
121
MAXIMUM
PEAK PULSE
CURRENT*
RATING
I
PP
Amps
44
41
38
36
34
29
25
20
15
14
11.1
8.6
6.8
5.8
4.1
MAXIMUM
CAPACITANCE
@ O Volts,
f=1 MHz
WORKING
INVERSE
BLOCKING
VOLTAGE
V
WIB
Volts
75
75
75
75
75
75
75
75
75
75
75
75
150
150
150
INVERSE
BLOCKING
LEAKAGE
CURRENT
I
IB
@ V
WIB
μA
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
PEAK
INVERSE
BLOCKING
VOLTAGE
V
PIB
Volts
100
100
100
100
100
100
100
100
100
100
100
100
200
200
200
pF
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
HSMBJSAC5.0
HSMBJSAC6.0
HSMBJSAC7.0
HSMBJSAC8.0
HSMBJSAC8.5
HSMBJSAC10
HSMBJSAC12
HSMBJSAC15
HSMBJSAC18
HSMBJSAC22
HSMBJSAC26
HSMBJSAC36
HSMBJSAC45
HSMBJSAC50
HSMBJSAC75
*See Figure 3. For the HSMBJSAC75, the maximum clamping voltage V
C
is at the maximum rated Peak Pulse Current (I
PP
) of 4.1 Amps.
Clamping Factor:
The ratio of the numerical value of V
C
to V
(BR)
is typically 1.4 @ full rated power, 1.20 @ 50% rated power. Also see MicroNote 108.
Note 1:
A transient voltage suppressor is normally selected according to voltage (V
WM
), that should be equal to or greater than the dc or continuous
peak operating voltage level.
Note 2:
When pulse testing, test in TVS avalanche direction. Do not pulse in “forward” direction. See section for “Schematic Applications” herein.
.
GRAPHS
HSMBJSAC5.0 thru
HSMBJSAC75,e3
t
w
– Pulse Width
μs
FIGURE 1
Copyright
©
2005
10-12-2005 REV G
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
HSMBJSAC5.0 thru HSMBJSAC75, e3
500 WATT LOW CAPACITANCE
TRANSIENT VOLTAGE SUPPRESSOR
SCOTTSDALE DIVISION
WWW .
Microsemi
.C
OM
T
L
– Lead Temperature – C
o
I
PP
– Peak Pulse Current - % I
PP
% of Rated Power
t – Time – msec
FIGURE 2
Lead Length = 3/8
”
FIGURE 3
SCHEMATIC APPLICATIONS
The TVS low capacitance device configuration is shown in Figure 4. As a further option for unidirectional applications, an additional low
capacitance rectifier diode may be used in parallel in the same polarity direction as the TVS as shown in Figure 5. In applications where random
high voltage transients occur, this will prevent reverse transients from damaging the internal low capacitance rectifier diode and also provide a
low voltage conducting direction. The added rectifier diode should be of similar low capacitance and also have a higher reverse voltage rating
than the TVS clamping voltage V
C
. The Microsemi recommended rectifier part number is the “HSMBJLCR60” for the application in Figure 5. If
using two (2) low capacitance TVS devices in anti-parallel for bidirectional applications, this added protective feature for both directions (including
the reverse of each rectifier diode) is inherently provided in Figure 6. The unidirectional and bidirectional configurations in Figure 5 and 6 will
both result in twice the capacitance of Figure 4.
PACKAGE
DIMENSIONS
FIGURE 4
TVS with internal Low
Capacitance Diode
FIGURE 5
Optional Unidirectional
configuration (TVS and
separate rectifier diode)
in parallel)
DIM
A
B
C
D
E
F
G
HSMBJSAC5.0 thru
HSMBJSAC75,e3
DIMENSIONS
INCHES
MILLIMETERS
MIN
MAX
MIN
MAX
.073
.160
.130
.205
.075
.030
.006
.087
.180
.155
.220
.130
.060
.016
1.85
4.06
3.30
5.21
1.91
.76
.15
2.21
4.57
3.94
5.59
3.30
1.52
.41
FIGURE 6
Optional Bidirectional
configuration (two TVS devices in
anti-parallel)
NOTE: Dimension E exceeds the
JEDEC outline in height as shown
Copyright
©
2005
10-12-2005 REV G
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
NXP MCU
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