Datasheet> 器件分类 > 分立半导体> 晶体管> ASI10803

文档预览

ASI10803: 产品描述RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN,; 产品类别分立半导体晶体管; 文件大小13KB，共1页; 制造商Advanced Semiconductor, Inc.

下载文档详细参数选型对比全文预览

ASI10803概述

RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN,

ASI10803规格参数

参数名称	属性值
厂商名称	Advanced Semiconductor, Inc.
包装说明	POST/STUD MOUNT, O-CRPM-F4
Reach Compliance Code	unknown
ECCN代码	EAR99
最大集电极电流 (IC)	4 A
基于收集器的最大容量	50 pF
集电极-发射极最大电压	35 V
最高频带	VERY HIGH FREQUENCY BAND
JESD-30 代码	O-CRPM-F4
端子数量	4
最高工作温度	200 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装形状	ROUND
封装形式	POST/STUD MOUNT
极性/信道类型	NPN
认证状态	Not Qualified
表面贴装	NO
端子形式	FLAT
端子位置	RADIAL
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON

文档预览

下载PDF文档

全文
预览

B25-28

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The

B25-28

is Designed for VHF

Class C Power Amplifier Applications

up to 250 MHz.

PACKAGE STYLE .380" 4L STUD

.112x45°

ØC

FEATURES:

•

= 10 dB Typical at 25 W/175 MHz

• ∞

Load

VSWR

at Rated Conditions

•

Omnigold™

Metallization System

#8-32 UNC-2A

MAXIMUM RATINGS

DISS

STG

4.0 A

65 V

40 W @ T

= 25 C

-55 C to +200 C

-55 C to +150 C

4.4 C/W

DIM

MINIMUM

inches / mm

MAXIMUM

inches / mm

.220 / 5.59

.980 / 24.89

.370 / 9.40

.004 / 0.10

.320 / 8.13

.100 / 2.54

.450 / 11.43

.090 / 2.29

.155 / 3.94

.230 / 5.84

.385 / 9.78

.007 / 0.18

.330 / 8.38

.130 / 3.30

.490 / 12.45

.100 / 2.54

.175 / 4.45

.750 / 19.05

ORDER CODE: ASI10803

CHARACTERISTICS

SYMBOL

CBO

CEO

EBO

CBO

= 25 C

TEST CONDITIONS

= 200 mA

= 10 mA

= 30 V

= 5.0 V

= 28 V

OUT

= 25 W

= 200 mA

f = 1.0 MHz

f = 175 MHz

MINIMUM TYPICAL MAXIMUM

4.0

2.0

8.5

UNITS

---

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE

•

NORTH HOLLYWOOD, CA 91605

•

(818) 982-1200

•

FAX (818) 765-3004

Specifications are subject to change without notice.

REV.A

1/1

ASI10803相似产品对比

	ASI10803
描述	RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN,
厂商名称	Advanced Semiconductor, Inc.
包装说明	POST/STUD MOUNT, O-CRPM-F4
Reach Compliance Code	unknown
ECCN代码	EAR99
最大集电极电流 (IC)	4 A
基于收集器的最大容量	50 pF
集电极-发射极最大电压	35 V
最高频带	VERY HIGH FREQUENCY BAND
JESD-30 代码	O-CRPM-F4
端子数量	4
最高工作温度	200 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装形状	ROUND
封装形式	POST/STUD MOUNT
极性/信道类型	NPN
认证状态	Not Qualified
表面贴装	NO
端子形式	FLAT
端子位置	RADIAL
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON

推荐资源

器件捷径: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

热门器件

开源项目推荐更多

热门活动更多

热门文章更多

技术资料推荐更多