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SSM6P28TU(TE85L)

产品描述TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,20V V(BR)DSS,800MA I(D),SOT-363VAR
产品类别分立半导体    晶体管   
文件大小154KB,共5页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
下载文档 详细参数 全文预览

SSM6P28TU(TE85L)概述

TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,20V V(BR)DSS,800MA I(D),SOT-363VAR

SSM6P28TU(TE85L)规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Toshiba(东芝)
包装说明,
Reach Compliance Codeunknown
最大漏极电流 (Abs) (ID)0.8 A
FET 技术METAL-OXIDE SEMICONDUCTOR
工作模式ENHANCEMENT MODE
最高工作温度150 °C
极性/信道类型P-CHANNEL
最大功率耗散 (Abs)0.5 W
表面贴装YES

SSM6P28TU(TE85L)文档预览

SSM6P28TU
TOSHIBA Field-Effect Transistor
Silicon P-Channel MOS Type
SSM6P28TU
High-Speed Switching Applications
Power Management Switch Applications
1.8V drive
P-ch 2-in-1
Low ON-resistance:
R
on
= 460 mΩ (max) (@V
GS
=
−1.8
V)
0.65 0.65
2.0±0.1
1.3±0.1
2.1±0.1
1.7±0.1
Unit: mm
R
on
= 306 mΩ (max) (@V
GS
=
−2.5
V)
R
on
= 234 mΩ (max) (@V
GS
=
−4.0
V)
1
2
3
6
5
4
Absolute Maximum Ratings
(Ta = 25°C) (Q1 , Q2 Common)
Characteristic
Drain-source voltage
Gate-source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
P
D (Note 1)
T
ch
T
stg
Rating
−20
±
8
−0.8
−1.6
500
150
−55
to 150
Unit
V
V
A
mW
°C
°C
0.7±0.05
1.Source1
2.Gate1
3.Drain2
4.Source2
5.Gate2
6.Drain1
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board (total dissipation)
2
(25.4 mm
×
25.4 mm
×
1.6 mm, Cu Pad: 645 mm )
UF6
JEDEC
JEITA
TOSHIBA
Weight: 7 mg (typ.)
2-2T1B
Electrical Characteristics
(Ta = 25°C) (Q1 , Q2 Common)
Characteristic
Drain-source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Turn-on time
Turn-off time
Symbol
V
(BR) DSS
V
(BR) DSX
I
DSS
I
GSS
V
th
⏐Y
fs
R
DS (ON)
C
iss
C
oss
C
rss
t
on
t
off
V
DSF
Test Conditions
I
D
= −
1 mA, V
GS
=
0
I
D
= −
1 mA, V
GS
= +
8 V
V
DS
= −
20 V, V
GS
=
0
V
GS
= ±
8 V, V
DS
=
0
V
DS
= −
3 V, I
D
= −
1 mA
V
DS
= −
3 V, I
D
= −
0.6 A
I
D
= −
0.6 A, V
GS
= −
4.0 V
I
D
= −
0.4 A, V
GS
= −
2.5 V
I
D
= −
0.1 A, V
GS
= −
1.8 V
(Note 2)
(Note 2)
(Note 2)
(Note 2)
Min
20
12
0.3
1.5
(Note 2)
Typ.
2.5
175
230
300
250
45
35
12
18
0.85
Max
10
±
1
1.0
234
306
460
1.2
pF
pF
pF
ns
V
Unit
V
μA
μA
V
S
V
DS
= −
10 V, V
GS
=
0, f
=
1 MHz
V
DS
= −
10 V, V
GS
=
0, f
=
1 MHz
V
DS
= −
10 V, V
GS
=
0, f
=
1 MHz
V
DD
= −
10 V, I
D
= −
0.25 A,
V
GS
=
0 to
2.5 V, R
G
=
4.7
Ω
I
D
=
0.8 A, V
GS
=
0 V
Drain-source forward voltage
Note 2: Pulse test
1
2007-11-01
+0.06
0.16-0.05
+0.1
0.3-0.05
SSM6P28TU
Switching Time Test Circuit
(a) Test Circuit
0
IN
R
G
R
L
V
DD
−2.5
V
90 %
OUT
(b) V
IN
0V
10 %
2.5 V
10
μs
(c) V
OUT
V
DS (ON)
90 %
10 %
t
r
t
on
t
off
t
f
V
DD
=
- 10 V
R
G
=
4.7
Ω
D.U.
<
1 %
=
V
IN
: t
r
, t
f
<
5 ns
Common Source
Ta
=
25 °C
V
DD
Marking
6
5
4
Equivalent Circuit
(top view)
6
5
4
JJ1
1
2
3
Q1
Q2
1
2
3
Precaution
V
th
can be expressed as the voltage between gate and source when the low operating current value is I
D
=
1 mA for
this product. For normal switching operation, V
GS (on)
requires a higher voltage than V
th,
and V
GS (off)
requires a lower
voltage than V
th.
(The relationship can be established as follows: V
GS (off)
< V
th
< V
GS (on).
)
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
2
2007-11-01
SSM6P28TU
-5
I
D
- V
DS
10
I
D
- V
GS
- 10
-4
Drain Current I
D
(A)
- 4.0
1
-3
- 2.5
Drain Current I
D
(A)
0.1
Ta = 85 °C
-2
- 1.8
- 1.5
0.01
25 °C
- 25 °C
Common Source
VDS = - 3 V
-1
0.001
Common Source
VGS = - 1.2
Ta = 25 °C
-0
-0.0
-0.2
-0.4
-0.6
-0.8
Drain-Source Voltage V
DS
(V)
-1.0
0.0001
0
1
Gate-Source Voltage V
GS
(V)
2
R
DS
(ON) - V
GS
300
250
- 0.8 A
200
- 0.4 A
150
100
50
0
-0
-1
-2 -3 -4 -5 -6 -7 -8
Gate-Source Voltage V
GS
(V)
-9 -10
ID = - 0.1 A
Common Source
Ta = 25 °C
400
350
R
DS
(ON) - Ta
Common Source
Drain-Source ON-Resistance
R
DS
(ON) (mΩ)
Drain-Source ON-Resistance
R
DS
(ON) (mΩ)
300
250
200
150
100
50
0
-60 -40 -20
0
20 40 60 80 100 120 140 160
- 1.8 V , - 0.1 A
- 2.5 V , - 0.4 A
VGS = - 4 V , ID = - 0.8 A
Ambient Temperature Ta(
)
400
350
Drain-Source ON-Resistance
R
DS
(ON) (mΩ)
300
250
200
150
100
50
0
-0
-1
R
DS
(ON) - I
D
-1
Gate Threshold Voltage Vth(V)
Vth - Ta
Common Source
ID = - 1 mA
VDS = - 3 V
-0.8
- 1.8 V
-0.6
- 2.5 V
VGS = - 4 V
Common Source
Ta = 25 °C
-0.4
-0.2
-0
-60 -40 -20 0
20 40 60 80 100 120 140 160
-2
-3
-4
-5
Ambient Temperature Ta(°C)
Drain Current I
D
(A)
3
2007-11-01
SSM6P28TU
10.0
|Yfs| - I
D
-10
Drain Reverse Current I
DR
(A)
I
DR
- V
DS
Common Source
VGS = 0 V
Ta = 25 °C
Forward Transfer Admittance
25 °C
- 25 °C
1.0
Ta = 85 °C
-1
|Yfs| (S)
25 °C
-0.1
Ta = 85 °C
-0.01
- 25 °C
Common Source
VDS = - 3 V
Ta = 25 °C
0.1
-0.01
-0.1
-1
-10
Drain Current I
D
(A)
-0.001
0
0.2
0.4
0.6
0.8
Drain-Source Voltage V
DS
(V)
1
1000
C - V
DS
1000
t - I
D
Common Source
VDD = 10 V
VGS = 0 to 2.5 V
Ta = 25 °C
Switching Time t (ns)
Capacitance C (pF)
Ciss
toff
100
100
tf
ton
tr
10
Common Source
VGS = 0 V
f = 1 MHz
Ta = 25 °C
10
0.1
1
10
Coss
Crss
100
1
-0.01
Drain-Source Voltage V
DS
(V)
-0.1
-1
Drain Current I
D
(A)
-10
1000
Drain Power Dissipation P
D
(mW)
800
600
a
b
P
D
- Ta
a : Mounted on an FR4 board
(25.4mm×25.4mm×1.6mm)
Cu Pad :25.4mm×25.4mm
b : Mounted on a ceramic board
(25.4mm×25.4mm×0.8mm)
Cu Pad :25.4mm×25.4mm
Rth - tw
1000
Rth (°C/W)
c
b
a
Single pulse
a : Mounted on an ceramic board
(25.4mm×25.4mm×0.8mm)
Cu Pad :25.4mm×25.4mm
b : Mounted on a FR4 board
(25.4mm×25.4mm×1.6mm)
Cu Pad :25.4mm×25.4mm
c : M ounted on a FR4 board
(25.4mm×25.4mm×1.6mm)
Cu Pad :0.45mm×0.8mm×3
400
200
0
0
20 40 60 80 100 120 140 160
Ambient Temperature Ta (°C)
Transient Thermal Impedance
100
10
1
0.001
0.01
0.1
1
10
Pulse Width tw (S)
100
1000
4
2007-11-01
SSM6P28TU
RESTRICTIONS ON PRODUCT USE
Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications.
TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR
APPLICATIONS.
Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
5
2007-11-01

 
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