HGTG12N60B3, HGTP12N60B3,
HGT1S12N60B3S
Data Sheet
April 2002
27A, 600V, UFS Series N-Channel IGBTs
This family of MOS gated high voltage switching devices
combine the best features of MOSFETs and bipolar
transistors. These devices have the high input impedance of
a MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25
o
C and 150
o
C.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly developmental type TA49171.
Features
• 27A, 600V, T
C
= 25
o
C
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 112ns at T
J
= 150
o
C
• Short Circuit Rating
• Low Conduction Loss
Packaging
JEDEC TO-220AB (ALTERNATE VERSION)
COLLECTOR
(FLANGE)
E
C
G
Ordering Information
PART NUMBER
HGTP12N60B3
HGTG12N60B3
HGT1S12N60B3S
PACKAGE
TO-220AB
TO-247
TO-263AB
BRAND
G12N60B3
G12N60B3
G12N60B3
G
E
JEDEC TO-263AB
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, i.e.
HGT1S12N60B3S9A.
COLLECTOR
(FLANGE)
Symbol
JEDEC STYLE TO-247
C
E
C
G
G
E
COLLECTOR
(BOTTOM SIDE METAL)
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2002 Fairchild Semiconductor Corporation
HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S Rev. C
HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTG12N60B3, HGTP12N60B3,
HGT1S12N60B3S
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
Collector Current Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GEM
Switching Safe Operating Area at T
J
= 150
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
ARV
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
Short Circuit Withstand Time (Note 2) at V
GE
= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
Short Circuit Withstand Time (Note 2) at V
GE
= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
600
27
12
110
±20
±30
96A at 600V
104
0.83
100
-55 to 150
300
260
5
10
W
W/
o
C
mJ
o
C
o
C
o
C
UNITS
V
A
A
A
V
V
µs
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 360V, T
J
= 125
o
C, R
G
= 25Ω.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
CES
I
CES
TEST CONDITIONS
I
C
= 250µA, V
GE
= 0V
V
CE
= 600V
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= 150
o
C
MIN
600
-
-
-
-
4.5
-
96
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
1.6
1.7
4.9
-
-
7.3
51
68
26
23
150
62
150
304
250
MAX
-
250
2.0
2.1
2.5
6.0
±250
-
-
60
78
-
-
-
-
-
350
350
UNITS
V
µA
mA
V
V
V
nA
A
V
nC
nC
ns
ns
ns
ns
µJ
µJ
µJ
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= 12A
V
GE
= 15V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
GE(TH)
I
GES
SSOA
V
GEP
Q
g(ON)
I
C
= 250µA, V
CE
= V
GE
V
GE
=
±20V
T
J
= 150
o
C, R
G
= 25Ω, V
GE
= 15V
L = 100µH, V
CE
= 600V
I
C
= 12A, V
CE
= 0.5 BV
CES
I
C
= 12A
V
CE
= 300V
V
GE
= 15V
V
GE
= 20V
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 4)
Turn-On Energy (Note 4)
Turn-Off Energy (Note 3)
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
IGBT and Diode at T
J
= 25
o
C
I
CE
= 12A
V
CE
= 480V
V
GE
= 15V
R
G
= 25Ω
L = 1mH
Test Circuit (Figure 17)
©2002 Fairchild Semiconductor Corporation
HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S Rev. C
HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S
Electrical Specifications
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 4)
Turn-On Energy (Note 4)
Turn-Off Energy (Note 3)
Thermal Resistance Junction To Case
NOTES:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 17.
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
R
θJC
TEST CONDITIONS
IGBT and Diode at T
J
= 150
o
C
I
CE
= 12A
V
CE
= 480V
V
GE
= 15V
R
G
= 25Ω
L = 1mH
Test Circuit (Figure 17)
MIN
-
-
-
-
-
-
-
-
TYP
22
23
280
112
165
500
660
-
MAX
-
-
295
175
-
525
800
1.2
UNITS
ns
ns
ns
ns
µJ
µJ
µJ
o
C/W
Typical Performance Curves
30
I
CE
, DC COLLECTOR CURRENT (A)
Unless Otherwise Specified
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
GE
= 15V
25
20
15
10
5
0
25
100
90
80
70
60
50
40
30
20
10
0
0
100
200
300
400
500
600
700
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
T
J
= 150
o
C, R
G
= 25Ω, V
GE
= 15V, L = 100µH
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
©2002 Fairchild Semiconductor Corporation
HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S Rev. C
HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S
Typical Performance Curves
300
T
J
= 150
o
C, R
G
= 25Ω, L = 1mH, V
CE
= 480V
Unless Otherwise Specified
(Continued)
t
SC
, SHORT CIRCUIT WITHSTAND TIME (µs)
16
14
f
MAX
, OPERATING FREQUENCY (kHz)
T
C
75
o
C
75
o
C
110
o
C
110
o
C
V
GE
15V
10V
15V
10V
V
CE
= 360V, R
G
= 25Ω, T
J
= 125
o
C
I
SC
100
90
80
70
60
50
t
SC
40
30
100
12
10
8
6
4
2
10
10
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
ØJC
= 1.2
o
C/W, SEE NOTES
1
2
3
10
20
30
11
12
13
14
15
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
GE
, GATE TO EMITTER VOLTAGE (V)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
70
T
C
= -55
o
C
60
50
40
30
20
10
0
T
C
= 25
o
C
DUTY CYCLE <0.5%, V
GE
= 10V
PULSE DURATION = 250µs
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
180
DUTY CYCLE <0.5%, V
GE
= 15V
160 PULSE DURATION = 250µs
140
120
100
80
60
40
20
0
0
2
4
T
C
= -55
o
C
T
C
= 150
o
C
T
C
= 150
o
C
T
C
= 25
o
C
0
2
4
6
8
10
6
8
10
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
3.0
E
ON
, TURN-ON ENERGY LOSS (mJ)
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
2.5
E
OFF
, TURN-OFF ENERGY LOSS (mJ)
R
G
= 25Ω, L = 1mH, V
CE
= 480V
2.5
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 10V
2.0
1.5
1.0
0.5
0
5
10
15
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
20
25
30
R
G
= 25Ω, L = 1mH, V
CE
= 480V
2.0
1.5
T
J
= 150
o
C; V
GE
= 10V OR 15V
1.0
0.5
T
J
= 25
o
C; V
GE
= 10V OR 15V
0
5
10
15
20
25
30
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
©2002 Fairchild Semiconductor Corporation
HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S Rev. C
I
SC
, PEAK SHORT CIRCUIT CURRENT (A)
HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S
Typical Performance Curves
55
R
G
= 25Ω, L = 1mH, V
CE
= 480V
t
dI
, TURN-ON DELAY TIME (ns)
50
45
40
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 10V
35
30
25
20
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
t
rI
, RISE TIME (ns)
Unless Otherwise Specified
(Continued)
150
R
G
= 25Ω, L = 1mH, V
CE
= 480V
125 T = 25
o
C, T = 150
o
C, V
J
J
GE
= 10V
100
75
50
25
T
J
= 25
o
C and T
J
= 150
o
C, V
GE
= 15V
0
5
10
15
20
25
30
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
5
10
15
20
25
30
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
300
t
d(OFF)I
, TURN-OFF DELAY TIME (ns)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
140
R
G
= 25Ω L = 1mH, V
CE
= 480V
,
R
G
= 25Ω, L = 1mH, V
CE
= 480V
275
t
fI
, FALL TIME (ns)
130
120
110
100
90
80
70
60
5
10
15
20
25
30
T
J
= 25
o
C, V
GE
= 10V OR 15V
T
J
= 150
o
C, V
GE
= 10V, V
GE
= 15V
250
225
200
175
150
125
100
5
10
15
20
25
30
T
J
= 150
o
C, V
GE
= 10V, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 10V, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
15
I
g (REF)
= 1mA, R
L
= 25Ω, T
C
= 25
o
C
DUTY CYCLE <0.5%, V
CE
= 10V
160 PULSE DURATION = 250µs
T
C
= 25
o
C
140
120
100
80
60
40
20
0
4
5
6
7
8
9
10
11
12
T
C
= -55
o
C
V
GE
, GATE TO EMITTER VOLTAGE (V)
180
12
V
CE
= 600V
9
T
C
= 150
o
C
6
V
CE
= 400V
V
CE
= 200V
3
0
13
14
15
V
GE
, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
0
5
10
15
20
25
30
35
40
45
50
Q
g
, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORM
©2002 Fairchild Semiconductor Corporation
HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S Rev. C
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