VIPER53EDIP
VIPER53ESP
OFF LINE PRIMARY SWITCH
PRELIMINARY DATA
Table 1. TYPICAL OUTPUT POWER
CAPABILITY
TYPE
VIPer53EDIP
VIPer53ESP
Note
Figure 1. Package
European
(195 - 265 Vac)
50W
65W
US / Wide range
(85 - 265 Vac)
30W
40W
: Above power capabilities are given under adequate
thermal conditions
10
s
s
SWITCHING FREQUENCY UP TO 300 KHZ
CURRENT MODE CONTROL WITH
ADJUSTABLE CURRENT LIMITATION
SOFT START AND SHUT DOWN CONTROL
AUTOMATIC BURST MODE IN STAND-BY
CONDITION (“BLUE ANGEL” COMPLIANT)
UNDERVOLTAGE LOCKOUT WITH
HYSTERESIS
INTEGRATED STARTUP CURRENT SOURCE
OVERTEMPERATURE PROTECTION
OVERLOAD AND SHORT-CIRCUIT
CONTROL
OVERVOLTAGE PROTECTION
DIP-8
1
PowerSO-10™
s
s
s
s
s
s
s
DESCRIPTION
The VIPer53E combines in the same package an
enhanced current mode PWM controller with a
high voltage MDMesh Power Mosfet.
Typical applications cover off line power supplies
with a secondary power capability ranging up to
30W in wide range input voltage or 50W in single
European voltage range and DIP-8 package, with
the following benefits:
– Overload and short circuit controlled by
feedback monitoring and delayed device reset.
– Efficient standby mode by enhanced pulse
skipping.
Integrated startup current source disabled during
the normal operation to reduce the input power.
Table 2. Order Codes
Package
Tube
VIPer53EDIP
VIPer53ESP
Tape And Reel
-
VIPer53ESP13TR
DIP-8
PowerSO-10™
Rev. 1
September 2004
1/22
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.
VIPER53EDIP / VIPER53ESP
Figure 2. Block Diagram
OSC
DRAIN
ON/OFF
OSCILLATOR
PWM
LATCH
OVERTEMP.
DETECTOR
R1
R2
R3
S
FF
R4
Q
R5
PWM
COMPARATOR
150/400ns
BLANKING
8.4/
11.5V
8V
STANDBY
COMPARATOR
0.5V
H
COMP
BLANKING TIME
SELECTION
1V
UVLO
COMPARATOR
VDD
0.5V
CURRENT
AMPLIFIER
Vcc
125k
4V
OVERLOAD
COMPARATOR
I
COMP
4.4V
OVERVOLTAGE
COMPARATOR
4.5V
18V
TOVL
COMP
SOURCE
Table 3. Absolute Maximum Ratings
Symbol
V
DS
I
D
V
DD
V
OSC
I
COMP
I
TOVL
V
ESD
T
j
T
c
T
stg
Parameter
Continuous Drain Source Voltage (T
j
=25 ... 125°C)
(See note 1)
Continuous Drain Current
Supply Voltage
OSC Input Voltage Range
COMP and TOVL Input Current Range
(See note 1)
Electrostatic Discharge:
Machine Model (R=0Ω; C=200pF)
Charged Device Model
Junction Operating Temperature
Case Operating Temperature
Storage Temperature
Value
-0.3 ... 620
Internally limited
0 ... 19
0 ... V
DD
-2 ... 2
200
1.5
Internally limited
-40 to 150
-55 to 150
Unit
V
A
V
V
mA
V
kV
°C
°C
°C
Note: 1. In order to improve the ruggedness of the device versus eventual drain overvoltages, a resistance of 1 kΩ should be inserted in
series with the TOVL pin.
2/22
VIPER53EDIP / VIPER53ESP
Figure 3. Configuration Diagram (Top View)
COMP
1
8
TOVL
DRAIN
NC
1
2
3
4
5
10
9
8
7
6
SOURCE
NC
NC
OSC
COMP
OSC 2
7
VDD
NC
NC
SOURCE 3
6
NC
VDD
TOVL
SOURCE 4
5
DRAIN
DIP-8
PowerSO-10™
Table 4. Pin Function
Name
Function
Power supply of the control circuits. Also provides the charging current of the external capacitor during
startup. The functions of this pin are managed by three threshold voltages:
- V
DDon
: Voltage value at which the device starts switching (Typically 11.5 V).
- V
DDoff
: Voltage value at which the device stops switching (Typically 8.4 V).
- V
DDovp
: Triggering voltage of the overvoltage protection (Trimmed to 18 V).
Power Mosfet source and circuit ground reference.
Power Mosfet drain. Also used by the internal high voltage current source during the start-up phase, for
charging the external V
DD
capacitor.
Input of the current mode structure. Allows the setting of the dynamic characteristic of the converter
through an external passive network. Useful voltage range extends from 0.5 V to 4.5 V. The Power
Mosfet is always off below 0.5 V, and the overload protection is triggered if the voltage exceeds 4.4V. This
action is delayed by the timing capacitor connected to the TOVL pin.
Allows the connection of an external capacitor for delaying the overload protection, which is triggered by
a voltage on the COMP pin higher than 4.4 V.
Allows the setting of the switching frequency through an external Rt-Ct network.
V
DD
SOURCE
DRAIN
COMP
TOVL
OSC
Figure 4. Current and Voltage Conventions
I
DD
I
D
VDD
I
OSC
OSC
CONTROL
DRAIN
V
DD
COMP
I
COMP
V
OSC
TOVL
SOURCE
V
DS
I
TOVL
V
COMP
V
TOVL
3/22
VIPER53EDIP / VIPER53ESP
Table 5. Thermal Data
Symbol
R
thj-case
R
thj-amb
R
thj-case
R
thj-amb
DIP-8
DIP-8
(See note 4)
Parameter
Max Value
20
80
2
(See note 4)
60
Unit
°C/W
°C/W
°C/W
°C/W
PowerSO-10™
PowerSO-10™
Note: 2. When mounted on a standard single-sided FR4 board with 50mm² of Cu (at least 35
µm
thick) connected to the DRAIN pin.
Note: 3. When mounted on a standard single-sided FR4 board with 50mm² of Cu (at least 35
µm
thick) connected to the device tab.
ELECTRICAL CHARACTERISTICS
(T
j
=25°C, V
DD
=13V, unless otherwise specified)
Table 6. Power Section
Symbol
BV
DSS
I
DSS
R
DS(on)
Parameter
Drain-Source Voltage
Off State Drain Current
Static Drain-Source
On State Resistance
Fall Time
Rise Time
Drain Capacitance
Effective Output
Capacitance
Test Conditions
I
D
=1mA; V
COMP
=0V
V
DS
=500V; V
COMP
=0V; T
j
=125°C
I
D
=1A; V
COMP
=4.5V; V
TOVL
=0V
T
j
=25°C
T
j
=100°C
I
D
=0.2A; V
IN
=300V
(See figure 5 and note 4)
I
D
=1A; V
IN
=300V
(See figure 5 and note 4)
V
DS
=25V
200V < V
DSon
< 400V
(See note 4)
0.9
Min.
620
150
1
1.7
Typ.
Max.
Unit
V
µA
Ω
Ω
ns
ns
pF
pF
t
fv
t
rv
C
oss
C
Eon
100
50
170
60
Note: 4. On clamped inductive load
Note: 5. This parameter can be used to compute the energy dissipated at turn on E
ton
according to the initial drain to source voltage V
DSon
1.5
and the following formula:
2 V DSon
1
⋅
300
⋅
------------------
E ton = --
⋅
C
-
-
2 Eon
300
Table 7. Oscillator Section
Symbol
F
OSC1
F
OSC2
V
OSChi
V
OSClo
Parameter
Oscillator Frequency
Initial Accuracy
Oscillator Frequency
Total Variation
Oscillator Peak Voltage
Oscillator Valley Voltage
Test Conditions
R
T
=8kΩ; C
T
=2.2nF
(See figure 9)
Min.
95
93
Typ.
100
100
9
4
Max.
105
107
Unit
kHz
kHz
V
V
(See figure 10)
R
T
=8kΩ; C
T
=2.2nF
V
DD
=V
DDon
... V
DDovp
; T
j
=0 ... 100°C
4/22
VIPER53EDIP / VIPER53ESP
ELECTRICAL CHARACTERISTICS
(T
j
=25°C, V
DD
=13V, unless otherwise specified)
Table 8. Supply Section
Symbol
V
DSstart
I
DDch1
I
DDch2
I
DDchoff
I
DD0
I
DD1
V
DDoff
V
DDon
V
DDhyst
V
DDovp
Parameter
Drain Voltage Starting
Threshold
Startup Charging Current
Startup Charging Current
Startup Charging Current
in Thermal Shutdown
Test Conditions
V
DD
=5V; I
DD
=0mA
V
DD
=0 ... 5V; V
DS
=100V (See figure 6)
V
DD
=10V; V
DS
=100V
V
DD
=5V; V
DS
=100V
T
j
> T
SD
- T
HYST
(See figure 6)
(See figure 8)
0
8
9
7.5
10.2
2.6
17
8.4
11.5
3.1
18
19
9.3
12.8
11
Min.
Typ.
34
-12
-2
Max.
50
Unit
V
mA
mA
mA
mA
mA
V
V
V
V
Operating Supply Current
F
sw
=0kHz; V
COMP
=0V
Not Switching
Operating Supply Current
F
sw
=100kHz
Switching
V
DD
Undervoltage
Shutdown Threshold
V
DD
Startup Threshold
V
DD
Threshold
Hysteresis
V
DD
Overvoltage
Shutdown Threshold
(See figure 6)
(See figure 6)
(See figure 6)
(See figure 8)
Table 9. Pwm Comparator Section
Symbol
H
COMP
V
COMPos
I
Dlim
I
Dmax
t
d
V
COMPbl
t
b1
t
b2
t
ONmin1
t
ONmin2
V
COMPoff
V
COMPhi
I
COMP
Parameter
∆V
COMP
/
∆I
DPEAK
V
COMP
Offset
Peak Drain Current
Limitation
Drain Current Capability
Current Sense Delay to
Turn-Off
V
COMP
Blanking Time
Change Threshold
Blanking Time
Blanking Time
Minimum On Time
Minimum On Time
V
COMP
Shutdown
Threshold
V
COMP
High Level
COMP Pull Up Current
Test Conditions
V
COMP
=1 ... 4 V
dI
D
/dt=0
dI
D
/dt=0
I
COMP
=0mA; V
TOVL
=0V
dI
D
/dt=0
(See figure 8)
1.7
(See figure 8)
(See figure 8)
1.7
1.6
2
1.9
250
1
(See figure 7)
(See figure 7)
300
100
450
250
400
150
600
350
0.5
(See note 5)
4.5
0.6
500
200
750
450
2.3
2.3
A
A
ns
V
ns
ns
ns
ns
V
V
mA
2
0.5
2.3
V/A
V
Min.
Typ.
Max.
Unit
V
COMP
=V
COMPovl
; V
TOVL
=0V
dI
D
/dt=0
(See figure 8)
I
D
=1A
(See figure 7)
V
COMP
< V
COMPBL
V
COMP
> V
COMPBL
V
COMP
< V
COMPBL
V
COMP
> V
COMPBL
(See figure 8)
I
COMP
=0mA
V
COMP
=2.5V
Note: 6. In order to insure a correct stability of the error amplifier, a capacitor of 10nF (minimum value: 8nF) should always be present on
the COMP pin.
5/22
Microchip MCU
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