SMAJ5.0 thru 188CA
Vishay Semiconductors
formerly General Semiconductor
Surface Mount T
RANS
Z
ORB
®
Transient Voltage Suppressors
DO-214AC (SMA)
Cathode Band
Stand-off Voltage
5.0 to 188V
Peak Pulse Power
400W
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
ded ge
ten Ran
Ex e
tag
Vol
0.066 MIN.
(1.68 MIN.)
0.052 MIN.
(1.32 MIN.)
Mounting Pad Layout
0.094 MAX.
(2.38 MAX.)
0.177 (4.50)
0.157 (3.99)
Dimensions in inches
and (millimeters)
0.012 (0.305)
0.006 (0.152)
0.090 (2.29)
0.078 (1.98)
0.220
(5.58) REF
Features
0.060 (1.52)
0.030 (0.76)
0.008 (0.203) MAX.
0.208 (5.28)
0.194 (4.93)
Mechanical Data
Case:
JEDEC DO-214AC molded plastic over
passivated chip
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity:
For uni-directional types the band denotes the
cathode, which is positive with respect to the anode
under normal TVS operation
Mounting Position:
Any
Weight:
0.002 oz., 0.064 g
Packaging Codes – Options (Antistatic):
51 – 1K per Bulk box, 20K/carton
61 – 1.8K per 7" plastic Reel (12mm tape), 36K/carton
5A – 7.5K per 13" plastic Reel (12mm tape), 75K/carton
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Optimized for LAN protection applications
• Ideal for ESD protection of data lines in
accordance with IEC 1000-4-2 (IEC801-2)
• Ideal for EFT protection of data lines in
accordance with IEC 1000-4-4 (IEC801-4)
• Low profile package with built-in strain relief for
surface mounted applications
• Glass passivated junction
• Low incremental surge resistance, excellent clamping
capability
• 400W peak pulse power capability with a 10/1000µs
waveform, repetition rate (duty cycle): 0.01% (300W
above 78V)
• Very fast response time
• High temperature soldering guaranteed:
250°C/10 seconds at terminals
Devices for Bidirectional Applications
For bi-directional devices, use suffix C or CA (e.g. SMAJ10C, SMAJ10CA). Electrical characteristics apply in both directions.
Maximum Ratings & Thermal Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Peak pulse power dissipation with
a 10/1000µs waveform
(1,2)
(see fig. 1)
Peak pulse current with a waveform
(1)
Peak forward surge current 8.3ms single half sine-wave
uni-directional only
(2)
Typical thermal resistance, junction to ambient
(3)
Typical thermal resistance, junction to lead
Operating junction and storage temperature range
Symbol
P
PPM
I
PPM
I
FSM
R
θJA
R
θJL
T
J
, T
STG
Value
400
See Next Table
40
120
30
–55 to +150
Unit
W
A
A
°C/W
°C/W
°C
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25°C per Fig. 2. Rating is 300W above 78V
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pads to each terminal
(3) Mounted on minimum recommended pad layout
Document Number 88390
03-May-02
www.vishay.com
1
SMAJ5.0 thru 188CA
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified. V
Device Type
Device
Marking
Code
UNI
BI
AD
WD
AE
WE
AF
WF
AG
WG
AH
WH
AK
WK
AL
WL
AM
WM
AN
WN
AP
WP
AQ
WQ
AR
WR
AS
WS
AT
WT
AU
WU
AV
WV
AW
WW
AX
WX
AY
WY
AZ
WZ
BD
XD
BE
XE
BF
XF
BG
XG
BH
XH
BK
XK
BL
XL
BM
XM
BN
XN
BP
XP
BQ
XQ
BR
XR
BS
XS
BT
XT
BU
XU
BV
XV
BW
XW
BX
XX
BY
XY
BZ
XZ
CD
YD
CE
YE
CF
YF
CG
YG
CH
YH
CK
YK
Breakdown Voltage
V
(BR)
at I
T
(1)
(V)
Min
Max
6.40
7.82
6.40
7.07
6.67
8.15
6.67
7.37
7.22
8.82
7.22
7.98
7.78
9.51
7.78
8.60
8.33
10.2
8.33
9.21
8.89
10.9
8.89
9.83
9.44
11.5
9.44
10.4
10.0
12.2
10.0
11.1
11.1
13.6
11.1
12.3
12.2
14.9
12.2
13.5
13.3
16.3
13.3
14.7
14.4
17.6
14.4
15.9
15.6
19.1
15.6
17.2
16.7
20.4
16.7
18.5
17.8
21.8
17.8
19.7
18.9
23.1
18.9
20.9
20.0
24.4
20.0
22.1
22.2
27.1
22.2
24.5
24.4
29.8
24.4
26.9
26.7
32.6
26.7
29.5
28.9
35.3
28.9
31.9
31.1
38.0
31.1
34.4
33.3
40.7
33.3
36.8
Test
Current
I
T
(mA)
10
10
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
V
WM
(V)
5.0
5.0
6.0
6.0
6.5
6.5
7.0
7.0
7.5
7.5
8.0
8.0
8.5
8.5
9.0
9.0
10
10
11
11
12
12
13
13
14
14
15
15
16
16
17
17
18
18
20
20
22
22
24
24
26
26
28
28
30
30
F
= 3.5V at I
F
= 25A (uni-directional only)
SMAJ5.0
SMAJ5.0A
(5)
SMAJ6.0
SMAJ6.0A
SMAJ6.5
SMAJ6.5A
SMAJ7.0
SMAJ7.0A
SMAJ7.5
SMAJ7.5A
SMAJ8.0
SMAJ8.0A
SMAJ8.5
SMAJ8.5A
SMAJ9.0
SMAJ9.0A
SMAJ10
SMAJ10A
SMAJ11
SMAJ11A
SMAJ12
SMAJ12A
SMAJ13
SMAJ13A
SMAJ14
SMAJ14A
SMAJ15
SMAJ15A
SMAJ16
SMAJ16A
SMAJ17
SMAJ17A
SMAJ18
SMAJ18A
SMAJ20
SMAJ20A
SMAJ22
SMAJ22A
SMAJ24
SMAJ24A
SMAJ26
SMAJ26A
SMAJ28
SMAJ28A
SMAJ30
SMAJ30A
Maximum
Maximum
Maximum
Reverse Leakage Peak Pulse Surge
Clamping
at V
WM
Current I
PPM
Voltage at I
PPM
I
D
(µA)
(3)
(A)
(2)
V
C
(V)
800
41.7
9.6
800
43.5
9.2
800
35.1
11.4
800
38.8
10.3
500
32.5
12.3
500
35.7
11.2
200
30.1
13.3
200
33.3
12.0
100
28.0
14.3
100
31.0
12.9
50
26.7
15.0
50
29.4
13.6
10
25.2
15.9
10
27.8
14.4
5.0
23.7
16.9
5.0
26.0
15.4
1.0
21.3
18.8
1.0
23.5
17.0
1.0
19.9
20.1
1.0
22.0
18.2
1.0
18.2
22.0
1.0
20.1
19.9
1.0
16.8
23.8
1.0
18.6
21.5
1.0
15.5
25.8
1.0
17.2
23.2
1.0
14.9
26.9
1.0
16.4
24.4
1.0
13.9
28.8
1.0
15.4
26.0
1.0
13.1
30.5
1.0
14.5
27.6
1.0
12.4
32.2
1.0
13.7
29.2
1.0
11.2
35.8
1.0
12.3
32.4
1.0
10.2
39.4
1.0
11.3
35.5
1.0
9.3
43.0
1.0
10.3
38.9
1.0
8.6
46.6
1.0
9.5
42.1
1.0
8.0
50.0
1.0
8.8
45.4
1.0
7.5
53.5
1.0
8.3
48.4
Notes:
(1) Pulse test: t
p
≤
50ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bi-directional types having V
WM
of 10 Volts and less, the I
D
limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
(5) For the bidirectional SMAJ5.0CA, the maximum V
(BR)
is 7.25V.
www.vishay.com
2
Document Number 88390
03-May-02
SMAJ5.0 thru 188CA
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified. V
Device Type
Device
Marking
Code
UNI
BI
CL
YL
CM
YM
CN
YN
CP
YP
CQ
YQ
CR
YR
CS
YS
CT
YT
CU
YU
CV
YV
CW
YW
CX
YX
CY
YY
CZ
YZ
RD
ZD
RE
ZE
RF
ZF
RG
ZG
RH
ZH
RK
ZK
RL
ZL
RM
ZM
RN
ZN
RP
ZP
RQ
ZQ
RR
ZR
RS
ZS
RT
ZT
RU
ZU
RV
ZV
RW
ZW
RX
ZX
RY
ZY
RZ
ZZ
VD
VD
SE
VE
SF
VF
VG
VG
SH
VH
VK
VK
SL
VL
VM
VM
SN
VN
SP
VP
SQ
VQ
SR
VR
ST
VT
SS
VS
Breakdown Voltage
V
(BR)
at I
T
(1)
(V)
Min
Max
36.7
44.9
36.7
40.6
40.0
48.9
40.0
44.2
44.4
54.3
44.4
49.1
47.8
58.4
47.8
52.8
50.0
61.1
50.0
55.3
53.3
65.1
53.3
58.9
56.7
69.3
56.7
62.7
60.0
73.3
60.0
66.3
64.4
78.7
64.4
71.2
66.7
81.5
66.7
73.7
71.1
86.9
71.1
78.6
77.8
95.1
77.8
86.0
83.3
102
83.3
92.1
86.7
106
86.7
95.8
94.4
115
94.4
104
100
122
100
111
111
136
111
123
122
149
122
135
133
163
133
147
144
176
144
159
167
204
167
185
178
218
178
197
189
231
189
209
209
255
209
231
Test
Current
I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
V
WM
(V)
33
33
36
36
40
40
43
43
45
45
48
48
51
51
54
54
58
58
60
60
64
64
70
70
75
75
78
78
85
85
90
90
100
100
110
110
120
120
130
130
150
150
160
160
170
170
188
188
F
= 3.5V at I
F
= 25A (uni-directional only)
SMAJ33
SMAJ33A
SMAJ36
SMAJ36A
SMAJ40
SMAJ40A
SMAJ43
SMAJ43A
SMAJ45
SMAJ45A
SMAJ48
SMAJ48A
SMAJ51
SMAJ51A
SMAJ54
SMAJ54A
SMAJ58
SMAJ58A
SMAJ60
SMAJ60A
SMAJ64
SMAJ64A
SMAJ70
SMAJ70A
SMAJ75
SMAJ75A
SMAJ78
SMAJ78A
SMAJ85
SMAJ85A
SMAJ90
SMAJ90A
SMAJ100
SMAJ100A
SMAJ110
SMAJ110A
SMAJ120
SMAJ120A
SMAJ130
SMAJ130A
SMAJ150
SMAJ150A
SMAJ160
SMAJ160A
SMAJ170
SMAJ170A
SMAJ188
SMAJ188A
Notes:
(1)
(2)
(3)
(4)
Maximum
Maximum
Maximum
Reverse Leakage Peak Pulse Surge
Clamping
at V
WM
Current I
PPM
Voltage at I
PPM
I
D
(µA)
(3)
(A)
(2)
V
C
(V)
1.0
6.8
59.0
1.0
7.5
53.3
1.0
6.2
64.3
1.0
6.9
58.1
1.0
5.6
71.4
1.0
6.2
64.5
1.0
5.2
76.7
1.0
5.8
69.4
1.0
5.0
80.3
1.0
5.5
72.7
1.0
4.7
85.5
1.0
5.2
77.4
1.0
4.4
91.1
1.0
4.9
82.4
1.0
4.2
96.3
1.0
4.6
87.1
1.0
3.9
103
1.0
4.3
93.6
1.0
3.7
107
1.0
4.1
96.8
1.0
3.5
114
1.0
3.9
103
1.0
3.2
125
1.0
3.5
113
1.0
3.0
134
1.0
3.3
121
1.0
2.9
139
1.0
3.2
126
1.0
2.0
151
1.0
2.2
137
1.0
1.9
160
1.0
2.1
146
1.0
1.7
179
1.0
1.9
162
1.0
1.5
196
1.0
1.7
177
1.0
1.4
214
1.0
1.6
193
1.0
1.3
231
1.0
1.4
209
1.0
1.1
268
1.0
1.2
243
1.0
1.0
287
1.0
1.2
259
1.0
0.99
304
1.0
1.09
275
1.0
0.9
344
1.0
0.91
328
Pulse test: t
p
≤
50ms
Surge current waveform per Fig. 3 and derate per Fig. 2
For bi-directional types having V
WM
of 10 Volts and less, the I
D
limit is doubled
All terms and symbols are consistent with ANSI/IEEE C62.35
Document Number 88390
03-May-02
www.vishay.com
3
SMAJ5.0 thru 188CA
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 – Peak Pulse Power Rating Curve
Peak Pulse Power (P
PP
) or Current (I
PPM
)
Derating in Percentage, %
100
100
Fig. 2 – Pulse Derating Curve
P
PPM
— Peak Pulse Power (kW)
Non-repetitive Pulse
Waveform shown in Fig. 3
T
A
= 25°C
10
75
SMAJ85 --
SMAJ188
1
SMAJ5.0 --
SMAJ78
50
25
0.2 x 0.2" (5.0 x 5.0mm)
Copper Pad Areas
0
0
25
50
75
100
125
150
175
200
0.2 x 0.2" (5.0 x 5.0mm)
Copper Pad Areas
0.1
0.1µs
1.0µs
10µs
100µs
1.0ms
10ms
t
d
— Pulse Width (sec.)
T
A
— Ambient Temperature (°C)
Fig. 3 – Pulse Waveform
150
10,000
Fig. 4 – Typical Junction Capacitance
C
J
— Junction Capacitance (pF)
T
J
= 25°C
f = 1.0MHz
Vsig = 50mVp-p
1,000
Measured at
Stand-Off
Voltage, V
WM
Uni-Directional
I
PPM
— Peak Pulse Current, % I
RSM
tr = 10µsec.
Peak Value
I
PPM
100
T
J
= 25°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of I
PPM
Half Value — IPP
2
I
PPM
50
10/1000µsec. Waveform
as defined by R.E.A.
100
Bi-Directional
td
0
10
0
1.0
2.0
3.0
4.0
1
10
100
200
t — Time (ms)
V
WM
— Reverse Stand-off Voltage (V)
Fig. 5 – Typical Transient Thermal
Impedance
I
FSM
— Peak Forward Surge Current (A)
1000
200
Fig. 6 - Maximum Non-Repetitive Forward
Surge Current Uni-Directional Only
T
J
= T
J
max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
Transient Thermal Impedance (°C/W)
100
100
50
10
1
0.001
10
1
5
10
50
100
0.01
0.1
1
10
100
1000
t
p
— Pulse Duration (sec)
www.vishay.com
4
Number of Cycles at 60 Hz
Document Number 88390
03-May-02
Microchip MCU
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