4Mb
SMART 3 BOOT BLOCK FLASH MEMORY
FLASH MEMORY
MT28F004B3
MT28F400B3
3V Only, Dual Supply (Smart 3)
FEATURES
• Seven erase blocks:
16KB/8K-word boot block (protected)
Two 8KB/4K-word parameter blocks
Four main memory blocks
• Smart 3 technology (B3):
3.3V ±0.3V V
CC
3.3V ±0.3V V
PP
application programming
5V ±10% V
PP
application/production programming
1
• Compatible with 0.3µm Smart 3 device
• Advanced 0.18µm CMOS floating-gate process
• Address access time: 80ns
• 100,000 ERASE cycles
• Industry-standard pinouts
• Inputs and outputs are fully TTL-compatible
• Automated write and erase algorithm
• Two-cycle WRITE/ERASE sequence
• Byte- or word-wide READ and WRITE
(MT28F400B3, 256K x 16/512K x 8)
• Byte-wide READ and WRITE only
(MT28F004B3, 512K x 8)
• TSOP and SOP packaging options
40-Pin TSOP Type I 48-Pin TSOP Type I
44-Pin SOP
OPTIONS
• Timing
80ns access
• Configurations
512K x 8
256K x 16/512K x 8
• Boot Block Starting Word Address
Top (3FFFFh)
Bottom (00000h)
• Operating Temperature Range
Commercial (0ºC to +70ºC)
Extended (-40ºC to +85ºC)
• Packages
44-pin SOP (MT28F400B3)
48-pin TSOP Type I (MT28F400B3)
40-pin TSOP Type I (MT28F004B3)
NOTE:
MARKING
-8
MT28F004B3
MT28F400B3
T
B
None
ET
SG
WG
VG
GENERAL DESCRIPTION
The MT28F004B3 (x8) and MT28F400B3 (x16/x8)
are nonvolatile, electrically block-erasable (flash), pro-
grammable memory devices containing 4,194,304 bits
organized as 262,144 words (16 bits) or 524,288 bytes (8
bits). Writing or erasing the device is done with either a
3.3V or 5V V
PP
voltage, while all operations are performed
with a 3.3V V
CC
. Due to process technology advances,
5V V
PP
is optimal for application and production pro-
gramming. These devices are fabricated with Micron’s
advanced 0.18µm CMOS floating-gate process.
The MT28F004B3 and MT28F400B3 are organized
into seven separately erasable blocks. To ensure that
critical firmware is protected from accidental erasure or
overwrite, the devices feature a hardware-protected
boot block. Writing or erasing the boot block requires
either applying a super-voltage to the RP# pin or driv-
ing WP# HIGH in addition to executing the normal write
or erase sequences. This block may be used to store
code implemented in low-level system recovery. The
remaining blocks vary in density and are written and
erased with no additional security measures.
Refer to Micron’s Web site (www.micron.com/flash)
for the latest data sheet.
1. This generation of devices does not support 12V V
PP
compatibility production programming; however, 5V V
PP
application production programming can be used with no
loss of performance.
Part Number Example:
MT28F400B3SG-8 T
4Mb Smart 3 Boot Block Flash Memory
F45_3.p65 – Rev. 3, Pub. 12/01
1
©2001, Micron Technology, Inc.
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
4Mb
SMART 3 BOOT BLOCK FLASH MEMORY
PIN ASSIGNMENT (Top View)
48-PIN TSOP TYPE I
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE#
RP#
V
PP
WP#
NC
NC
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE#
V
SS
DQ15/(A-1)
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
V
CC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
V
SS
CE#
A0
V
PP
WP#
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE#
V
SS
OE#
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44-PIN SOP
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
RP#
WE#
A8
A9
A10
A11
A12
A13
A14
A15
A16
BYTE#
V
SS
DQ15/(A-1)
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
V
CC
ORDER NUMBER AND PART MARKING
MT28F400B3WG-8 B
MT28F400B3WG-8 T
MT28F400B3WG-8 BET
MT28F400B3WG-8 TET
ORDER NUMBER AND PART MARKING
MT28F400B3SG-8 B
MT28F400B3SG-8 T
MT28F400B3SG-8 BET
MT28F400B3SG-8 TET
40-PIN TSOP TYPE I
A16
A15
A14
A13
A12
A11
A9
A8
WE#
RP#
V
PP
WP#
A18
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
A17
V
SS
NC
NC
A10
DQ7
DQ6
DQ5
DQ4
V
CC
V
CC
NC
DQ3
DQ2
DQ1
DQ0
OE#
V
SS
CE#
A0
ORDER NUMBER AND PART MARKING
MT28F004B3VG-8 B
MT28F004B3VG-8 T
MT28F004B3VG-8 BET
MT28F004B3VG-8 TET
4Mb Smart 3 Boot Block Flash Memory
F45_3.p65 – Rev. 3, Pub. 12/01
2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc.
4Mb
SMART 3 BOOT BLOCK FLASH MEMORY
FUNCTIONAL BLOCK DIAGRAM
8
Input
Buffer
BYTE#
1
I/O
Control
Logic
7
16KB Boot Block
18 (19)
9
9
(10)
Input
Buffer
Addr.
A0–A17/(A18)
A9
Buffer/
Latch
8KB Parameter Block
8KB Parameter Block
96KB Main Block
Input
Buffer
A-1
Input Data
Latch/Mux
16
128KB Main Block
X - Decoder/Block Erase Control
Addr.
Power
(Current)
Control
Counter
128KB Main Block
DQ15/(A - 1)
1
DQ8–DQ14
1
128KB Main Block
WP#
CE#
OE#
WE#
RP#
V
CC
V
PP
V
PP
Switch/
Pump
Command
Execution
Logic
State
Machine
Y-
Decoder
7
Y - Select Gates
8
Sense Amplifiers
Write/Erase-Bit
Compare and Verify
DQ0–DQ7
Output
Buffer
DQ15
Status
Register
Identification
Register
7
Output
Buffer
8
Output
Buffer
MUX
8
NOTE:
1. Does not apply to MT28F004B3.
4Mb Smart 3 Boot Block Flash Memory
F45_3.p65 – Rev. 3, Pub. 12/01
3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc.
4Mb
SMART 3 BOOT BLOCK FLASH MEMORY
PIN DESCRIPTIONS
44-PIN SOP 40-PIN TSOP 48-PIN TSOP
NUMBERS NUMBERS NUMBERS SYMBOL
43
9
11
WE#
TYPE
Input
DESCRIPTION
Write Enable: Determines if a given cycle is a WRITE
cycle. If WE# is LOW, the cycle is either a WRITE to the
command execution logic (CEL) or to the memory array.
Write Protect: Unlocks the boot block when HIGH if V
PP
= V
PPH
1
(3.3V) or V
PPH
2
(5V) and RP# = V
IH
during a
WRITE or ERASE. Does not affect WRITE or ERASE
operation on other blocks.
Chip Enable: Activates the device when LOW. When
CE# is HIGH, the device is disabled and goes into
standby power mode.
Reset/Power-Down: When LOW, RP# clears the status
register, sets the internal state machine (ISM) to the
array read mode and places the device in deep power-
down mode. All inputs, including CE#, are “Don’t
Care,” and all outputs are High-Z. RP# unlocks the boot
block and overrides the condition of WP# when at V
HH
(12V), and must be held at V
IH
during all other modes
of operation.
Output Enable: Enables data output buffers when
LOW. When OE# is HIGH, the output buffers are
disabled.
Byte Enable: If BYTE# = HIGH, the upper byte is active
through DQ8–DQ15. If BYTE# = LOW, DQ8–DQ14 are
High-Z, and all data is accessed through DQ0–DQ7.
DQ15/(A-1) becomes the least significant address input.
Address Inputs: Select a unique, 16-bit word or 8-bit
byte. The DQ15/(A-1) input becomes the lowest order
address when BYTE# = LOW (MT28F400B3) to allow for
a selection of an 8-bit byte from the 524,288 available.
2
12
14
WP#
Input
12
22
26
CE#
Input
44
10
12
RP#
Input
14
24
28
OE#
Input
33
–
47
BYTE#
Input
11, 10, 9, 8, 21, 20, 19,
7, 6, 5, 4,
18, 17, 16,
42, 41, 40, 15, 14, 8, 7,
39, 38, 37, 36, 6, 5, 4, 3,
36, 35, 34, 3 2, 1, 40, 13
31
–
15, 17, 19,
21, 24, 26,
28, 30
16, 18, 20,
22, 25, 27,
29
1
23
13, 32
–
Input/ Data I/O: MSB of data when BYTE# = HIGH. Address
Output Input: LSB of address input when BYTE# = LOW during
READ or WRITE operation.
25-28, 32-35 29, 31, 33, DQ0–DQ7
Input/ Data I/Os: Data output pins during any READ operation
35, 38, 40,
Output or data input pins during a WRITE. These pins are used
42, 44
to inputcommands to the CEL.
–
30, 32, 34, DQ8–DQ14
Input/ Data I/Os: Data output pins during any READ operation
36, 39, 41,
Output or data input pins during a WRITE when BYTE# = HIGH.
43
These pins are High-Z when BYTE# is LOW.
11
13
V
PP
Supply Write/Erase Supply Voltage: From a WRITE or ERASE
CONFIRM until completion of the WRITE or ERASE, V
PP
must be at V
PPH
1
(3.3V) or V
PPH
2
(5V). V
PP
= “Don’t Care”
during all other operations.
30, 31
37
V
CC
Supply Power Supply: +3.3V ±0.3V.
23, 39
27, 46
V
SS
Supply Ground.
29, 37, 38 9, 10, 15, 16
NC
–
No Connect: These pins may be driven or left
unconnected.
25, 24, 23,
22, 21, 20,
19, 18, 8, 7,
6, 5, 4, 3, 2,
1, 48, 17
45
A0–A17/
(A18)
Input
DQ15/
(A-1)
4Mb Smart 3 Boot Block Flash Memory
F45_3.p65 – Rev. 3, Pub. 12/01
4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc.
4Mb
SMART 3 BOOT BLOCK FLASH MEMORY
TRUTH TABLE (MT28F400B3)
1
FUNCTION
Standby
RESET
READ
READ (word mode)
READ (byte mode)
Output Disable
ERASE SETUP
ERASE CONFIRM
3
WRITE SETUP
WRITE (word mode)
4
WRITE (byte mode)
4
READ ARRAY
5
WRITE/ERASE (BOOT BLOCK)
2, 7
ERASE SETUP
ERASE CONFIRM
3
ERASE CONFIRM
3, 6
WRITE SETUP
WRITE (word mode)
4
WRITE (word mode)
4, 6
WRITE (byte mode)
4
WRITE (byte mode)
4, 6
READ ARRAY
5
DEVICE IDENTIFICATION
8, 9
Manufacturer Compatibility
(word mode)
10
Manufacturer Compatibility
(byte mode)
Device (word mode, top boot)
10
Device (byte mode, top boot)
Device (word mode, bottom boot)
10
Device (byte mode, bottom boot)
NOTE:
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
RP#
H
L
H
H
H
H
H
H
H
H
H
H
V
HH
H
H
V
HH
H
V
HH
H
H
H
H
H
H
H
H
CE#
H
X
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
OE#
X
X
L
L
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
L
L
L
L
L
L
WE# WP# BYTE# A0
X
X
H
H
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
H
H
H
H
H
H
X
X
X
X
X
X
X
X
X
X
X
X
X
H
X
X
H
X
H
X
X
X
X
X
X
X
X
X
H
L
X
X
X
X
H
L
X
X
X
X
X
H
H
L
L
X
H
L
H
L
H
L
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
L
L
H
H
H
H
A9
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
V
ID
V
ID
V
ID
V
ID
V
ID
V
ID
V
PP
X
X
X
X
X
X
V
PPH
X
V
PPH
V
PPH
X
X
V
PPH
V
PPH
X
V
PPH
V
PPH
V
PPH
V
PPH
X
X
X
X
X
X
X
DQ0–DQ7 DQ8–DQ14 DQ15/A-1
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
Data-Out Data-Out Data-Out
Data-Out High-Z
High-Z
20h
D0h
10h/40h
Data-In
Data-In
FFh
20h
D0h
D0h
10h/40h
Data-In
Data-In
Data-In
Data-In
FFh
89h
89h
70h
70h
71h
71h
High-Z
X
X
X
Data-In
X
X
X
X
X
X
Data-In
Data-In
X
X
X
00h
High-Z
44h
High-Z
44h
High-Z
A-1
High-Z
X
X
X
Data-In
A-1
X
X
X
X
X
Data-In
Data-In
A-1
A-1
X
–
X
–
X
–
X
WRITE/ERASE (EXCEPT BOOT BLOCK)
2
L = V
IL
(LOW), H = V
IH
(HIGH), X = V
IL
or V
IH
(“Don’t Care”).
V
PPH
= V
PPH1
(3.3V) or V
PPH2
(5V).
Operation must be preceded by ERASE SETUP command.
Operation must be preceded by WRITE SETUP command.
The READ ARRAY command must be issued before reading the array after writing or erasing.
When WP# = V
IH
, RP# may be at V
IH
or V
HH
.
V
HH
= 12V.
V
ID
= 12V; may also be read by issuing the IDENTIFY DEVICE command.
A1–A8, A10–A17 = V
IL
.
Value reflects DQ8–DQ15.
4Mb Smart 3 Boot Block Flash Memory
F45_3.p65 – Rev. 3, Pub. 12/01
5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc.
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
