TRANSISTOR 30 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, CERDIP-14, BIP General Purpose Small Signal
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | ADI(亚德诺半导体) |
| 零件包装代码 | DIP |
| 包装说明 | CERDIP-14 |
| 针数 | 14 |
| Reach Compliance Code | compliant |
| 其他特性 | LOW NOISE |
| 最大集电极电流 (IC) | 0.03 A |
| 集电极-发射极最大电压 | 40 V |
| 配置 | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE |
| 最小直流电流增益 (hFE) | 300 |
| JESD-30 代码 | R-GDIP-T14 |
| JESD-609代码 | e0 |
| 元件数量 | 4 |
| 端子数量 | 14 |
| 最高工作温度 | 85 °C |
| 封装主体材料 | CERAMIC, GLASS-SEALED |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 峰值回流温度(摄氏度) | NOT SPECIFIED |
| 极性/信道类型 | NPN |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子面层 | TIN LEAD |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 300 MHz |
| VCEsat-Max | 0.06 V |
| MAT-04BIEY | MAT-04BIFP | MAT-04BIFY | |
|---|---|---|---|
| 描述 | TRANSISTOR 30 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, CERDIP-14, BIP General Purpose Small Signal | TRANSISTOR 30 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, DIP-14, BIP General Purpose Small Signal | TRANSISTOR 30 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, CERDIP-14, BIP General Purpose Small Signal |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | ADI(亚德诺半导体) | ADI(亚德诺半导体) | ADI(亚德诺半导体) |
| 零件包装代码 | DIP | DIP | DIP |
| 包装说明 | CERDIP-14 | IN-LINE, R-PDIP-T14 | IN-LINE, R-GDIP-T14 |
| 针数 | 14 | 14 | 14 |
| Reach Compliance Code | compliant | compliant | compliant |
| 其他特性 | LOW NOISE | LOW NOISE | LOW NOISE |
| 最大集电极电流 (IC) | 0.03 A | 0.03 A | 0.03 A |
| 集电极-发射极最大电压 | 40 V | 40 V | 40 V |
| 配置 | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE |
| 最小直流电流增益 (hFE) | 300 | 300 | 300 |
| JESD-30 代码 | R-GDIP-T14 | R-PDIP-T14 | R-GDIP-T14 |
| JESD-609代码 | e0 | e0 | e0 |
| 元件数量 | 4 | 4 | 4 |
| 端子数量 | 14 | 14 | 14 |
| 最高工作温度 | 85 °C | 85 °C | 85 °C |
| 封装主体材料 | CERAMIC, GLASS-SEALED | PLASTIC/EPOXY | CERAMIC, GLASS-SEALED |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE |
| 峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | NPN | NPN | NPN |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO |
| 端子面层 | TIN LEAD | TIN LEAD | TIN LEAD |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 300 MHz | 300 MHz | 300 MHz |
| VCEsat-Max | 0.06 V | 0.06 V | 0.06 V |
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