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SA5230DR2G

产品描述OP-AMP, 4000uV OFFSET-MAX, 0.6MHz BAND WIDTH, PDSO8, LEAD FREE, PLASTIC, SOIC-8
产品类别模拟混合信号IC    放大器电路   
文件大小887KB,共19页
制造商Rochester Electronics
官网地址https://www.rocelec.com/
标准  
下载文档 详细参数 选型对比 全文预览

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SA5230DR2G概述

OP-AMP, 4000uV OFFSET-MAX, 0.6MHz BAND WIDTH, PDSO8, LEAD FREE, PLASTIC, SOIC-8

SA5230DR2G规格参数

参数名称属性值
是否无铅不含铅
厂商名称Rochester Electronics
零件包装代码SOIC
包装说明LEAD FREE, PLASTIC, SOIC-8
针数8
Reach Compliance Codeunknown
放大器类型OPERATIONAL AMPLIFIER
最大平均偏置电流 (IIB)0.2 µA
标称共模抑制比95 dB
最大输入失调电压4000 µV
JESD-30 代码R-PDSO-G8
JESD-609代码e3
长度4.9 mm
湿度敏感等级NOT SPECIFIED
负供电电压上限-9 V
标称负供电电压 (Vsup)-7.5 V
功能数量1
端子数量8
最高工作温度85 °C
最低工作温度-40 °C
封装主体材料PLASTIC/EPOXY
封装代码SOP
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
认证状态COMMERCIAL
座面最大高度1.75 mm
标称压摆率0.25 V/us
供电电压上限9 V
标称供电电压 (Vsup)7.5 V
表面贴装YES
技术BIPOLAR
温度等级INDUSTRIAL
端子面层MATTE TIN
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
处于峰值回流温度下的最长时间40
标称均一增益带宽600 kHz
宽度3.9 mm

SA5230DR2G文档预览

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NE5230, SA5230, SE5230
Low Voltage Operational
Amplifier
The NE5230 is a very low voltage operational amplifier that can
perform with a voltage supply as low as 1.8 V or as high as 15 V.
In addition, split or single supplies can be used, and the output will
swing to ground when applying the latter. There is a bias adjusting pin
which controls the supply current required by the device and thereby
controls its power consumption. If the part is operated at
±0.9
V
supply voltages, the current required is only 110
mA
when the current
control pin is left open. Even with this low power consumption, the
device obtains a typical unity gain bandwidth of 250 kHz. When the
bias adjusting pin is connected to the negative supply, the unity gain
bandwidth is typically 600 kHz while the supply current is increased
to 600
mA.
In this mode, the part will supply full power output beyond
the audio range.
The NE5230 also has a unique input stage that allows the
common−mode input range to go above the positive and below the
negative supply voltages by 250 mV. This provides for the largest
possible input voltages for low voltage applications. The part is also
internally−compensated to reduce external component count.
The NE5230 has a low input bias current of typically
±40
nA, and a
large open−loop gain of 125 dB. These two specifications are
beneficial when using the device in transducer applications. The large
open−loop gain gives very accurate signal processing because of the
large “excess” loop gain in a closed−loop system.
The output stage is a class AB type that can swing to within 100 mV
of the supply voltages for the largest dynamic range that is needed in
many applications. The NE5230 is ideal for portable audio equipment
and remote transducers because of its low power consumption, unity
gain bandwidth, and 30 nV/√Hz noise specification.
Features
http://onsemi.com
8
1
SOIC−8
D SUFFIX
CASE 751
8
1
PDIP−8
N SUFFIX
CASE 626
PIN CONNECTIONS
N, D Packages
NC
−IN
+IN
V
EE
1
2
3
4
+
8
7
6
5
NC
V
CC
OUTPUT
BIAS ADJ.
(Top View)
DEVICE MARKING INFORMATION
See general marking information in the device marking
section on page 16 of this data sheet.
Works Down to 1.8 V Supply Voltages
Adjustable Supply Current
Low Noise
Common−mode Includes Both Rails
V
OUT
Within 100 mV of Both Rails
These are Pb−Free Devices
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 16 of this data sheet.
Applications
Portable Precision Instruments
Remote Transducer Amplifier
Portable Audio Equipment
Rail−to−Rail Comparators
Half−wave Rectification without Diodes
Remote Temperature Transducer with 4.0 to 20 mA Output
Transmission
©
Semiconductor Components Industries, LLC, 2010
August, 2010
Rev. 5
1
Publication Order Number:
NE5230/D
NE5230, SA5230, SE5230
MAXIMUM RATINGS
Rating
Single Supply Voltage
Dual Supply Voltage
Input Voltage (Note 1)
Differential Input Voltage (Note 1)
Common−Mode Voltage (Positive)
Common−Mode Voltage (Negative)
Power Dissipation (Note 2)
Thermal Resistance, Junction−to−Ambient
N Package
D Package
V
CM
V
CM
P
D
R
qJA
Symbol
V
CC
V
S
V
IN
Value
18
±9
±9
(18)
±V
S
V
CC
+ 0.5
V
EE
0.5
500
130
182
150
0 to 70
−40
to 85
−40
to 125
Indefinite
T
stg
T
sld
−65
to 150
230
Unit
V
V
V
V
V
V
mW
°C/W
Operating Junction Temperature (Note 2)
Operating Temperature Range
NE
SA
SE
T
J
T
A
°C
°C
80 Output Short−Circuit Duration to Either Power Supply Pin (Notes 2 and 3)
Storage Temperature
Lead Soldering Temperature (10 sec max)
s
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Can exceed the supply voltages when V
S
≤ ±7.5
V (15 V).
2. The maximum operating junction temperature is 150°C. At elevated temperatures, devices must be derated according to the package thermal
resistance and device mounting conditions.
Derate above 25°C at the following rates:
N package at 7.7 mW/°C
D package at 5.5 mW/°C.
3. Momentary shorts to either supply are permitted in accordance to transient thermal impedance limitations determined by the package and
device mounting conditions.
RECOMMENDED OPERATING CONDITIONS
Characteristic
Single Supply Voltage
Dual Supply Voltage
Common−Mode Voltage (Positive)
Common−Mode Voltage (Negative)
Temperature
NE Grade
SA Grade
SE Grade
Value
1.8 to 15
±0.9
to
±7.5
V
CC
+ 0.25
V
EE
0.25
0 to +70
−40
to +85
−40
to +125
Unit
V
V
V
V
°C
http://onsemi.com
2
NE5230, SA5230, SE5230
DC AND AC ELECTRICAL CHARACTERISTIC
Unless otherwise specified,
±0.9V ≤
Vs
≤ ±7.5
V or equivalent single supply,
R
L
= 10 kW, full input common−mode range, over full operating temperature range.
Characteristic
NE5230, SA5230
Offset Voltage
Drift
Offset Current
V
OS
V
OS
I
OS
T
A
= 25°C
T
A
= T
low
to T
high
Drift
Bias Current
I
OS
I
B
T
A
= 25°C
T
A
= T
low
to T
high
Any
Any
Any
High
Low
High
Low
High
Low
T
A
= 25°C
T
A
= T
low
to T
high
Drift
Supply Current
I
B
I
S
V
S
=
±0.9
V
T
A
= T
low
to T
high
T
A
= 25°C
V
S
=
±7.5
V
T
A
= T
low
to T
high
Common−Mode Input Range
Common−Mode Rejection Ratio
V
CM
CMRR
V
S
=
±7.5
V
Power Supply Rejection Ratio
PSRR
V
OS
6 mV, T
A
= 25°C
V
OS
6 mV, T
A
= T
low
to T
high
R
S =
10 kW; V
CM
=
±7.5
V;
T
A
= 25°C
R
S
= 10 kW; V
CM
=
±7.5
V;
T
A
= T
low
to T
high
T
A
= 25°C
V
OS
v
6 mV, T
A
= T
low
to T
high
Load Current
Source
Sink
Source
Sink
Source
Sink
Source
Sink
I
L
V
S
=
±0.9
V; T
A
= 25°C
V
S
=
±0.9
V; T
A
= 25°C
V
S
=
±7.5
V; T
A
= 25°C
V
S
=
±7.5
V; T
A
= 25°C
V
S
=
±0.9
V; T
A
= T
low
to T
high
V
S
=
±0.9
V; T
A
= T
low
to T
high
V
S =
±7.5
V; T
A
= T
low
to T
high
V
S
=
±7.5
V; T
A
= T
low
to T
high
High
Low
High
Low
High
Low
T
A
= 25°C
Low
High
Low
High
Low
High
Low
High
Any
Any
Any
Any
High
Low
High
Low
High
High
High
High
Any
Any
Any
Any
1.0
2.0
4.0
5.0
V
0.25
V
85
80
90
85
75
80
4.0
5.0
6
7
16
32
5
6
10
15
mA
105
95
dB
95
320
1100
2.0
2.0
110
600
0.5
0.3
40
20
0.4
3.0
2.0
3.0
3.0
3.0
4.0
5.0
50
30
100
60
1.4
1.4
150
60
200
150
4.0
4.0
160
750
250
800
550
1600
600
1700
V
+
+ 0.25
V
+
dB
V
mA
mA
nA/°C
nA
nA/°C
mV/°C
nA
mV
Symbol
Test Conditions
Bias
Min
Typ
Max
Unit
For NE5230 devices, T
low
= 0°C and T
high
= +70°C. For SA5230 devices, T
low
=
−40°C
and T
high
= +85°C.
http://onsemi.com
3
NE5230, SA5230, SE5230
DC AND AC ELECTRICAL CHARACTERISTIC
Unless otherwise specified,
±0.9V ≤
Vs
≤ ±7.5
V or equivalent single supply,
R
L
= 10 kW, full input common−mode range, over full operating temperature range.
Characteristic
SE5230
Offset Voltage
V
OS
V
OS
I
OS
T
A
= 25°C
T
A
= T
low
to T
high
Drift
Bias Current
I
OS
I
B
T
A
= 25°C
T
A
= T
low
to T
high
Drift
Offset Current
Any
Any
Any
High
Low
High
Low
High
Low
T
A
= 25°C
T
A
= T
low
to T
high
Drift
Supply Current
I
B
I
S
V
S
=
±0.9
V
T
A
= T
low
to T
high
T
A
= 25°C
V
S
=
±7.5
V
T
A
= T
low
to T
high
Common−Mode Input Range
Common−Mode Rejection Ratio
V
CM
CMRR
V
S
=
±7.5
V
Power Supply Rejection Ratio
PSRR
V
OS
6 mV, T
A
= 25°C
V
OS
20 mV, T
A
= T
low
to T
high
R
S =
10 kW; V
CM
=
±7.5
V;
T
A
= 25°C
R
S
= 10 kW; V
CM
=
±7.5
V;
T
A
= T
low
to T
high
T
A
= 25°C
T
A
= T
low
to T
high
Load Current
Source
Sink
Source
Sink
Source
Sink
Source
Sink
I
L
V
S
=
±0.9
V; T
A
= 25°C
V
S
=
±0.9
V; T
A
= 25°C
V
S
=
±7.5
V; T
A
= 25°C
V
S
=
±7.5
V; T
A
= 25°C
V
S
=
±0.9
V; T
A
= T
low
to T
high
V
S
=
±0.9
V; T
A
= T
low
to T
high
V
S =
±7.5
V; T
A
= T
low
to T
high
V
S
=
±7.5
V; T
A
= T
low
to T
high
High
Low
High
Low
High
Low
T
A
= 25°C
Low
High
Low
High
Low
High
Low
High
Any
Any
Any
Any
High
Low
High
Low
High
High
High
High
Any
Any
Any
Any
1.0
2.0
4.0
5.0
V
0.25
V
85
80
90
85
75
80
4.0
5.0
6
7
16
32
5
6
10
15
mA
105
95
dB
95
320
1100
2.0
2.0
110
600
0.5
0.3
40
20
0.4
3.0
2.0
3.0
3.0
3.0
4.0
5.0
50
30
100
60
1.4
1.4
150
60
300
300
4.0
4.0
160
750
275
850
550
1600
600
1700
V
+
+ 0.25
V
+
dB
V
mA
mA
nA/°C
nA
nA/°C
mV/°C
nA
mV
Symbol
Test Conditions
Bias
Min
Typ
Max
Unit
For SE5230 devices, T
low
=
−40°C
and T
high
= +125°C.
http://onsemi.com
4

SA5230DR2G相似产品对比

SA5230DR2G SA5230DG SA5230NG NE5230NG
描述 OP-AMP, 4000uV OFFSET-MAX, 0.6MHz BAND WIDTH, PDSO8, LEAD FREE, PLASTIC, SOIC-8 OP-AMP, 4000uV OFFSET-MAX, 0.6MHz BAND WIDTH, PDSO8, LEAD FREE, PLASTIC, SOIC-8 OP-AMP, 4000uV OFFSET-MAX, 0.6MHz BAND WIDTH, PDIP8, LEAD FREE, PLASTIC, DIP-8 OP-AMP, 4000uV OFFSET-MAX, 0.6MHz BAND WIDTH, PDIP8, LEAD FREE, PLASTIC, DIP-8
是否无铅 不含铅 含铅 含铅 含铅
厂商名称 Rochester Electronics Rochester Electronics Rochester Electronics Rochester Electronics
零件包装代码 SOIC SOIC DIP DIP
包装说明 LEAD FREE, PLASTIC, SOIC-8 LEAD FREE, PLASTIC, SOIC-8 LEAD FREE, PLASTIC, DIP-8 LEAD FREE, PLASTIC, DIP-8
针数 8 8 8 8
Reach Compliance Code unknown unknown unknown unknown
放大器类型 OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
最大平均偏置电流 (IIB) 0.2 µA 0.2 µA 0.2 µA 0.2 µA
标称共模抑制比 95 dB 95 dB 95 dB 95 dB
最大输入失调电压 4000 µV 4000 µV 4000 µV 4000 µV
JESD-30 代码 R-PDSO-G8 R-PDSO-G8 R-PDIP-T8 R-PDIP-T8
JESD-609代码 e3 e3 e3 e3
长度 4.9 mm 4.9 mm 9.27 mm 9.27 mm
湿度敏感等级 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
负供电电压上限 -9 V -9 V -9 V -9 V
标称负供电电压 (Vsup) -7.5 V -7.5 V -7.5 V -7.5 V
功能数量 1 1 1 1
端子数量 8 8 8 8
最高工作温度 85 °C 85 °C 85 °C 70 °C
最低工作温度 -40 °C -40 °C -40 °C -
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOP SOP DIP DIP
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE IN-LINE IN-LINE
峰值回流温度(摄氏度) 260 260 260 260
认证状态 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
座面最大高度 1.75 mm 1.75 mm 5.33 mm 5.33 mm
标称压摆率 0.25 V/us 0.25 V/us 0.25 V/us 0.25 V/us
供电电压上限 9 V 9 V 9 V 9 V
标称供电电压 (Vsup) 7.5 V 7.5 V 7.5 V 7.5 V
表面贴装 YES YES NO NO
技术 BIPOLAR BIPOLAR BIPOLAR BIPOLAR
温度等级 INDUSTRIAL INDUSTRIAL INDUSTRIAL COMMERCIAL
端子面层 MATTE TIN MATTE TIN MATTE TIN MATTE TIN
端子形式 GULL WING GULL WING THROUGH-HOLE THROUGH-HOLE
端子节距 1.27 mm 1.27 mm 2.54 mm 2.54 mm
端子位置 DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 40 40 40 40
标称均一增益带宽 600 kHz 600 kHz 600 kHz 600 kHz
宽度 3.9 mm 3.9 mm 7.62 mm 7.62 mm
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