CNY17XM, CNY17FXM, MOC810XM — Phototransistor Optocouplers
November 2009
CNY171M, CNY172M, CNY173M, CNY174M,
CNY17F1M, CNY17F2M, CNY17F3M, CNY17F4M,
MOC8106M, MOC8107M
Phototransistor Optocouplers
Features
■
UL recognized (File # E90700, Vol. 2)
■
VDE recognized
Description
The CNY17XM, CNY17FXM and MOC810XM devices
consist of a Gallium Arsenide IRED coupled with an NPN
phototransistor in a dual in-line package.
■
■
■
■
– Add option V (e.g., CNY17F2VM)
– File #102497
Current transfer ratio in select groups
High BV
CEO
: 70V minimum (CNY17XM, CNY17FXM,
MOC810XM)
Closely matched current transfer ratio (CTR)
minimizes unit-to-unit variation.
Very low coupled capacitance along with no chip to
pin 6 base connection for minimum noise
susceptability (CNY17FXM, MOC810XM)
Package Outlines
Applications
■
Power supply regulators
■
Digital logic inputs
■
Microprocessor inputs
■
Appliance sensor systems
■
Industrial controls
Schematics
ANODE 1
6 NC
ANODE 1
6 BASE
CATHODE 2
5 COLLECTOR
CATHODE 2
5 COLLECTOR
NC 3
4 EMITTER
NC 3
4 EMITTER
CNY17F1M/2M/3M/4M
MOC8106M/7M
CNY171M/2M/3M/4M
©2006 Fairchild Semiconductor Corporation
CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1
www.fairchildsemi.com
CNY17XM, CNY17FXM, MOC810XM — Phototransistor Optocouplers
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
TOTAL DEVICE
T
STG
T
OPR
T
J
T
SOL
P
D
EMITTER
I
F
V
R
I
F
(pk)
P
D
DETECTOR
I
C
V
CEO
V
ECO
P
D
Storage Temperature
Operating Temperature
Junction Temperature
Lead Solder Temperature
Parameters
Value
-40 to +150
-40 to +100
-40 to +125
260 for 10 sec
250
2.94
60
6
1.5
120
1.41
50
70
7
150
1.76
Units
°C
°C
ºC
°C
mW
mW/°C
mA
V
A
mW
mW/°C
mA
V
V
mW
mW/°C
Total Device Power Dissipation @ 25°C (LED plus detector)
Derate Linearly From 25°C
Continuous Forward Current
Reverse Voltage
Forward Current – Peak (1µs pulse, 300pps)
LED Power Dissipation 25°C Ambient
Derate Linearly From 25°C
Continuous Collector Current
Collector-Emitter Voltage
Emitter Collector Voltage
Detector Power Dissipation @ 25°C
Derate Linearly from 25°C
©2006 Fairchild Semiconductor Corporation
CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1
www.fairchildsemi.com
2
CNY17XM, CNY17FXM, MOC810XM — Phototransistor Optocouplers
Electrical Characteristics
(T
A
= 25°C Unless otherwise specified.)
(1)
Individual Component Characteristics
Symbol
Parameters
Test Conditions
EMITTER
V
F
Input Forward Voltage
I
F
= 60mA
I
F
= 10mA
C
J
I
R
Capacitance
Reverse Leakage
Current
Breakdown Voltage
Collector to Emitter
Collector to Base
Emitter to Collector
Leakage Current
Collector to Emitter
Collector to Base
Capacitance
Collector to Emitter
Collector to Base
Emitter to Base
V
F
= 0 V, f = 1.0MHz
V
R
= 6V
CNY17XM,
CNY17FXM
MOC810XM
All
All
1.0
1.0
1.35
1.15
18
0.001
10
1.65
1.50
pF
µA
V
Device
Min.
Typ.
Max.
Units
DETECTOR
BV
CEO
BV
CBO
BV
ECO
I
CEO
I
CBO
C
CE
C
CB
C
EB
I
C
= 1.0mA, I
F
= 0
I
C
= 10µA, I
F
= 0
I
E
= 100µA, I
F
= 0
V
CE
= 10 V, I
F
= 0
V
CB
= 10 V, I
F
= 0
V
CE
= 0, f = 1MHz
V
CB
= 0, f = 1MHz
V
EB
= 0, f = 1MHz
All
CNY171M/2M/3M/4M
All
All
CNY171M/2M/3M/4M
All
CNY171M/2M/3M/4M
CNY171M/2M/3M/4M
8
20
10
70
70
7
100
120
10
1
50
20
nA
nA
pF
pF
pF
V
Isolation Characteristics
Symbol
V
ISO
R
ISO
C
ISO
Characteristic
Input-Output Isolation Voltage
Isolation Resistance
Isolation Capacitance
Test Conditions
f = 60 Hz, t = 1 sec.,
I
I-O
≤
2µA
(4)
V
I-O
= 500 VDC
(4)
V
I-O
= Ø, f = 1MHz
(4)
Min.
7500
10
11
Typ.*
Max.
Units
Vac(pk)
Ω
0.2
pF
Transfer Characteristics
(T
A
= 25°C Unless otherwise specified.)
(3)
Symbol
COUPLED
(CTR)
(2)
Output Collector
Current
MOC8106M
MOC8107M
CNY17F1M
CNY17F2M
CNY17F3M
CNY17F4M
CNY171M
CNY172M
CNY173M
CNY174M
V
CE(sat)
Collector-Emitter CNY17XM/FXM
Saturation Voltage MOC8106M/7M
I
C
= 2.5mA, I
F
= 10mA
I
C
= 500µA, I
F
= 5.0mA
I
F
= 10mA, V
CE
= 5V
I
F
= 10mA, V
CE
= 10V
50
150
%
DC Characteristics
Test Conditions
Min. Typ.* Max. Units
100
40
63
100
160
40
63
100
160
300
80
125
200
320
80
125
200
320
0.4
V
*All typicals at T
A
= 25°C
©2006 Fairchild Semiconductor Corporation
CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1
www.fairchildsemi.com
3
CNY17XM, CNY17FXM, MOC810XM — Phototransistor Optocouplers
Electrical Characteristics
Symbol
t
on
t
off
t
d
t
r
t
s
t
f
(Continued) (T
A
= 25°C Unless otherwise specified.)
(1)
Transfer Characteristics
(Continued)
(3)
AC Characteristics
(4)
Turn-On Time
Turn-Off Time
Delay Time
Rise Time
Storage Time
Fall Time
All Devices
All Devices
CNY17XM/XFM
All Devices
CNY17XM/FXM
CNY17XM/FXM
All Devices
CNY17XM/FXM
SATURATED SWITCHING TIMES
t
on
Turn-on Time
CNY171M/F1M
CNY172M/3M/4M
CNY17F2M/F3M/F4M
t
r
Rise Time
CNY171M/F1M
CNY172M/3M/4M
CNY17F2M/F3M/F4M
t
d
Delay Time
CNY171M/F1M
CNY172M/3M/4M
CNY17F2M/F3M/F4M
t
off
Turn-off Time
CNY171M/F1M
CNY172M/3M/4M
CNY17F2M/F3M/F4M
t
f
Fall Time
CNY171M/F1M
CNY172M/3M/4M
CNY17F2M/F3M/F4M
t
s
Storage Time
CNY171M/F1M
I
F
= 20mA, V
CC
= 5V, R
L
= 1kΩ
I
F
= 10mA, V
CC
= 5V, R
L
= 1kΩ
I
F
= 20mA, V
CC
= 5V, R
L
= 1kΩ
I
F
= 10mA, V
CC
= 5V, R
L
= 1kΩ
I
F
= 20mA, V
CC
= 5V, R
L
= 1kΩ
I
F
= 10mA, V
CC
= 5V, R
L
= 1kΩ
I
F
= 20mA, V
CE
= 0.4V
I
F
= 10mA, V
CE
= 0.4V
I
F
= 20mA, V
CC
= 5V, R
L
= 1kΩ
I
F
= 10mA, V
CC
= 5V, R
L
= 1kΩ
I
F
= 20mA, V
CC
= 5V, R
L
= 1kΩ
5.5
8.0
4.0
6.0
5.5
8.0
34
39
20.0
24.0
34.0
µs
µs
µs
µs
µs
µs
Test Conditions
I
C
= 2.0mA, V
CC
= 10V, R
L
= 100
Ω
I
C
= 2.0mA, V
CC
= 10V, R
L
= 100
Ω
I
F
= 10mA, V
CC
= 5V, R
L
= 75
Ω
I
C
= 2.0mA, V
CC
= 10V, R
L
= 100
Ω
I
F
= 10mA, V
CC
= 5V, R
L
= 75Ω
I
F
= 10mA, V
CC
= 5V, R
L
= 75Ω
I
C
= 2.0mA, V
CC
= 10V, R
L
= 100Ω
I
F
= 10mA, V
CC
= 5V, R
L
= 75Ω
Min. Typ.* Max. Units
2
3
1
4.0
4.1
2
3.5
µs
µs
10
10
5.6
µs
µs
µs
µs
NON-SATURATED SWITCHING TIME
CNY172M/3M/4M
I
F
= 10mA, V
CC
= 5V, R
L
= 1kΩ
CNY17F2M/F3M/F4M
*All typicals at T
A
= 25°C
Notes:
39.0
1.
2.
3.
4.
Always design to the specified minimum/maximum electrical limits (where applicable).
Current Transfer Ratio (CTR) = I
C
/I
F
x 100%.
For test circuit setup and waveforms, refer to Figures 10 and 11.
For this test, Pins 1 and 2 are common, and Pins 4 are 5 are common.
©2006 Fairchild Semiconductor Corporation
CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1
www.fairchildsemi.com
4
CNY17XM, CNY17FXM, MOC810XM — Phototransistor Optocouplers
Safety and Insulation Ratings
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol
Parameter
Installation Classifications per DIN VDE 0110/1.89
Table 1
For Rated Main Voltage < 150Vrms
For Rated Main voltage < 300Vrms
Climatic Classification
Pollution Degree (DIN VDE 0110/1.89)
Min.
Typ.
Max.
Unit
I-IV
I-IV
55/100/21
2
175
1594
V
peak
CTI
V
PR
Comparative Tracking Index
Input to Output Test Voltage, Method b,
V
IORM
x 1.875 = V
PR
, 100% Production Test
with tm = 1 sec, Partial Discharge < 5pC
Input to Output Test Voltage, Method a,
V
IORM
x 1.5 = V
PR
, Type and Sample Test
with tm = 60 sec, Partial Discharge < 5pC
1275
V
peak
V
IORM
V
IOTM
Max. Working Insulation Voltage Vpeak
Highest Allowable Over Voltage Vpeak
External Creepage
External Clearance
Insulation Thickness
850
6000
7
7
0.5
10
9
V
peak
V
peak
mm
mm
mm
Ω
RIO
Insulation Resistance at Ts, V
IO
= 500V
©2006 Fairchild Semiconductor Corporation
CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1
www.fairchildsemi.com
5
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