IGBT MODULE
Spec.No.IGBT-SP-06011 R1 (P1/5)
Silicon N-channel IGBT
MBL800E33C
OUTLINE DRAWING
Unit in mm
FEATURES
∗
High thermal fatigue durability.(delta Tc=70 ,N>30,000cycles)
diode – ultra soft fast recovery diode(USFD).
∗
low noise due to built-in free-wheeling
∗
High speed,low loss IGBT module.
CIRCUIT DIAGRAM
∗
Low driving power due to low input
capacitance MOS gate.
∗
High reliability,high durability module.
∗
lsolated heat sink(terminal to base).
ABSOLUTE MAXIMUM RATINGS (Tc=25
C
)
Collector Emitter Voltage
Gate Emitter Voltage
Collector Current
Forward Current
Junction Temperature
Storage Temperature
lsolation Voltage
Screw Torque
Terminals
(M4/M8)
o
Weight : 1300(g)
Item
Symbol
DC
1ms
DC
1ms
V
CES
V
GES
I
C
I
Cp
I
F
I
FM
T
j
T
stg
V
ISO
-
-
Unit
V
V
A
A
o
o
V
RMS
N·m
C
C
Mounting
(M6)
3,300
±20
800
1,600
800
1,600
-40 ~ +125
-40 ~ +125
6,000(AC 1 minute)
2/10
(1)
6
(2)
MBL800E33C
Notes: (1) Recommended Value 1.8±0.2N·m 9±1N·m
(2) Recommended Value 5.5±0.5N·m
CHARECTERISTICS
1) IGBT + FWD
Item
Collector Emitter Cut-Off Current
Gate Emitter Leakage Current
Collector Emitter Saturation Voltage
Gate Emitter Threshold Voltage
Input Capacitance
Rise Time
Turn On Time
Switching Times
Fall Time
Turn Off Time
Turn On Loss
Turn Off Loss
Peak Forward Voltage Drop
Thermal Impedance
Symbol
I
CES
I
GES
V
CE(sat)
V
GE(TO)
C
ies
t
r
t
on
t
f
t
off
E
on(10%)
E
off(10%)
V
FM
Rth(j-c)
Rth(j-c)
Unit
mA
nA
V
V
nF
µs
J/P
J/P
V
K/W
Min.
-
-
-
-
-
4.5
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
20
-
4.1
4.8
5.5
100
2.0
2.9
1.7
3.5
1.6
1.1
2.2
2.3
-
-
Max.
12
60
500
5.0
5.3
6.5
-
3.2
3.8
3.2
5.6
2.1
1.6
2.8
2.75
0.013
0.026
Test Conditions
V
CE
=3,300V, V
GE
=0V, T =25
V
CE
=3,300V, V
GE
=0V,T =125
V
GE
= 20V, V
CE
=0V, T =25
I
C
=800A, V
GE
=15V, Tj=25
I
C
=800A, V
GE
=15V ,T =125
V
CE
=5V, Ic=800mA, Tj=25
V
CE
=10V, V
GE
=0V,f=100KHz, Tj=25
V
CC
=1,650V
Ic=800A
L=120nH
R
G
=4.7Ω (3)
V
GE
=±15V
o
T =125 C
IGBT
FWD
Junction to case
2) DIODE
Item
Collector Emitter Cut-Off Current
Peak Forward Voltage Drop
Reverse Recovery Time
Reverse Recovery Loss
Thermal Impedance
Symbol
I
AKS
V
F
E
rr(10%)
Rth(j-c)
trr
Unit
mA
V
µs
J/P
K/W
Min.
-
-
-
-
-
-
-
Typ.
-
5
2.4
2.7
0.8
1.0
-
Max.
12
20
3.0
3.2
Tj=125
(Terminal resistance:0.5mΩ typical)
1.4 I
F
=800A, V
CC
=1,650V (4)
o
1.4 L=120nH, T =125 C
0.026 Junction to case
At Main Terminal
Notes: (3) R
G
value is the test condition's value for decision of the switching times,
not recommended value. Please, Determine the suitable R
G
value after the
measurement of switching waveforms(overshoot voltage,etc.)with appliance mounted.
(4)Counter arm IGBT V
GE
= 15V
¢
V
AK
=3,300V
V
AK
=3,300V,Tc=125
I
F
=800A
Tj=25
Test Conditions
¢
-Ic=800A, V
GE
=0V, T =25
-Ic=800A, V
GE
=0V, T =125
¢
¢
¢
¢
¢
¢
¢
¢
¡
¡
¡
¡
¡
¡
¡
¢
¢
£
¡
£
¤
IGBT MODULE
Spec.No.IGBT-SP-06011 R1 (P2/5)
MBL800E33C
CHARACTERISTICS CURVE
STATIC CHARACTERISTICS
TYPICAL
1600
VGE=15V 13V
TYPICAL
1600
VGE=15V
13V
1400
1400
11V
1200
1200
Collector Current IC (A)
Collector Current IC (A)
1000
1000
800
9V
800
9V
600
600
400
400
7V
200
7V
200
0
0
1
2
3
4
5
6
7
8
9
5V
0
10
0
1
2
Collector-Emitter Voltage VCE (V)
Collector-Emitter Voltage VCE (V)
Collector Current vs.Collector to Emitter Voltage
TYPICAL
Collector Current vs.Collector to Emitter Voltage
TYPICAL
1600
1400
1400
1000
Forward Current IF (A)
Forward Current IF (A)
1000
800
800
600
600
400
400
200
200
0
0
1
2
3
4
5
0
0
1
2
3
4
5
Forward Voltage VF (V)
Forward Voltage VF (V)
Forward Voltage of free-wheeling diode
Forward Voltage of diode
© © ¨©
1200
1200
§§§§
§§§§
1600
Tc=25
Tc=125
¦¦¦¦
5V
¥¥¥¥
Tc=25
11V
Tc=125
3
4
5
6
7
8
9
10
Tc=25
Tc=125
IGBT MODULE
Spec.No.IGBT-SP-06011 R1 (P3/5)
MBL800E33C
DEPENDENCE OF CURRENT
TYPICAL
TYPICAL
1.8
1.6
1.8
Eon(10%)
Eoff (J/pulse)
1.6
1.4
1.2
Eon (J/pulse)
1.4
1.2
1
0.8
V
CE
I
C
Turn-off Loss
Turn-on Loss
1
0.8
I
C
V
CE
0.6
0
10%
10%
V
GE
0.6
0
V
GE
0.4
0.2
0
0
200
400
0
t1 t3
t4 t2
0.4
t3
t2
t1
Eoff(full)=
t5
I
C
V
CE
dt
0
1000
0
200
400
600
600
800
800
Collector Current IC (A)
Collector Current IC (A)
Turn-on Loss vs. Collector Current
TYPICAL
Turn-off Loss vs. Collector Current
TYPICAL
Tc=125
Vcc=1650V
Rg=4.7
L=120nH
VG=±15V
1.8
1.6
Switching Time ton,tr,toff,tf,trr (
µ
s )
Tc=125
Vcc=1650V
Rg=4.7
L=120nH
VG=±15V
7.0
Recovery Loss Err (J/pulse)
1.4
1.2
1
0.8
0.6
0
0.1V
CE
I
RM
I
F
I
C
t9
Err(full)
6.0
5.0
Err(10%)
4.0
3.0
V
CE
0.1I
F
t
t12
t11
t10
0.4
0.2
0
0
200
400
600
2.0
t9
800
Collector Current IC (A)
Recovery Loss vs. Collector Current
)
0
Err(full)=
t11
t10
I
C
)
(
Err(10%)=
t12
I
C
V
CE
dt
V
CE
dt
1.0
1000
0.0
0
200
400
600
800
1000
Switching Time vs. Collector Current
444
3333
%%%%
Conditions
Collector Current
2222
1111
&&&&
''''
$$$$
2
8.0
Conditions
I
C
(A)
"
!
Eon(full)=
I
C
V
CE
dt
0.2
Eoff(10%)=
t7
t6
I
C
V
CE
dt
"
!
Eon(10%)=
I
C
V
CE
dt
"
t4
Tc=125
Vcc=1650V
Rg=4.7
L=120nH
VG=±15V
Tc=125
Vcc=1650V
Rg=4.7
L=120nH
VG=±15V
Eoff(full)
Eoff(10%)
10%
0
10%
t
t5 t7
t8
t8 t6
"
!
#
Conditions
Eon(full)
2
2
Conditions
1000
toff
ton
tr
tf
trr
IGBT MODULE
Spec.No.IGBT-SP-06011 R1 (P4/5)
MBL800E33C
DEPENDENCE OF RG
Tc=125
Vcc=1650V
IC=800A
L=120nH
VG=±15V
Tc=125
Vcc=1650V
IC=800A
L=120nH
VG=±15V
2.5
2.5
Eoff(10%)=
Eoff (J/pulse)
Eon (J/pulse)
Eoff(full)=
2
2
t5
I
C
V
CE
dt
Turn-off Loss
Turn-on Loss
1.5
Eon(10%)
1.5
1
V
CE
I
C
1
0
10%
10%
V
GE
0.5
0
t1 t3
t4 t2
0.5
t3
t2
t1
Eon(10%)=
Eon(full)=
I
C
V
CE
dt
I
C
V
CE
dt
0
0.0
2.0
4.0
6.0
Turn-on Loss vs. Gate Resistance
Turn-off Loss vs. Gate Resistance
2.5
Tc=125
Vcc=1650V
IC=800A
L=120nH
VG=±15V
Err (J/pulse)
Err(10%)=
Err(full)=
t9
I
C
V
CE
dt
2
Reverse Recovery Loss
1.5
1
Err(10%)
0.5
0
0.0
2.0
4.0
6.0
8.0
Recovery Loss vs. Gate Resistance
HHHH
Gate Resistance
R
G
( )
S
t11
t10
I
C
V
CE
dt
S
R
T
PPPP
QQ
IIII
3
TYPICAL
Conditions
0.1V
CE
I
RM
I
F
I
C
t9
t11
t12
V
CE
0.1I
F
t
t12
t10
0
Err(Full)
BBBB
5555
Gate Resistance R
G
(
)
@
t4
0
8.0
0.0
2.0
4.0
6.0
8.0
Gate Resistance
G
t7
t6
I
C
V
CE
dt
G
F
Eon(Full)
F
DDDD
0
0
EEEE
@
9
A
7777
Conditions
CCCC
8888
6666
3
TYPICAL
3
TYPICAL
Conditions
I
C
V
CE
10%
V
GE
10%
t
t5 t7
t8
t8 t6
Eoff(Full)
Eoff(10%)
R
G
(
)
IGBT MODULE
Spec.No.IGBT-SP-06011 R1 (P5/5)
MBL800E33C
Thermal Impedance
TRANSIENT THERMAL IMPEDANCE
Trannsient thermal impedance Rth(j-c)(K/W)
0.1
FWD
0.01
IGBT
0.001
0.0001
0.001
0.01
0.1
Time t(s)
1
10
Transient Thermal Impedance Curve
(Maximum Value)
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