Trans Voltage Suppressor Diode, 300W, 5V V(RWM), Unidirectional, 4 Element, Silicon, MO-211BB, FLIP CHIP, MO-211, CSP-6
参数名称 | 属性值 |
是否Rohs认证 | 符合 |
厂商名称 | SEMTECH |
零件包装代码 | DSBGA |
包装说明 | FLIP CHIP, MO-211, CSP-6 |
针数 | 6 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
最小击穿电压 | 6 V |
最大钳位电压 | 11 V |
配置 | COMMON ANODE, 4 ELEMENTS |
二极管元件材料 | SILICON |
二极管类型 | TRANS VOLTAGE SUPPRESSOR DIODE |
JEDEC-95代码 | MO-211BB |
JESD-30 代码 | R-PBGA-B6 |
最大非重复峰值反向功率耗散 | 300 W |
元件数量 | 4 |
端子数量 | 6 |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | GRID ARRAY |
极性 | UNIDIRECTIONAL |
认证状态 | Not Qualified |
最大重复峰值反向电压 | 5 V |
表面贴装 | YES |
技术 | AVALANCHE |
端子形式 | BALL |
端子位置 | BOTTOM |
SFC05-4.WFT | SFC05-4.TF | SFC05-4.TC | SFC05-4.WF | SFC05-4.WM | |
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描述 | Trans Voltage Suppressor Diode, 300W, 5V V(RWM), Unidirectional, 4 Element, Silicon, MO-211BB, FLIP CHIP, MO-211, CSP-6 | Trans Voltage Suppressor Diode, 300W, 5V V(RWM), Unidirectional, 4 Element, Silicon, MO-211BB, FLIP CHIP, CSP-6 | Trans Voltage Suppressor Diode, 300W, 5V V(RWM), Unidirectional, 4 Element, Silicon, MO-211BB, FLIP CHIP, CSP-6 | Trans Voltage Suppressor Diode, 300W, 5V V(RWM), Unidirectional, 4 Element, Silicon, MO-211BB, FLIP CHIP, MO-211, CSP-6 | Trans Voltage Suppressor Diode, 300W, 5V V(RWM), Unidirectional, 4 Element, Silicon, MO-211BB, FLIP CHIP, MO-211, CSP-6 |
是否Rohs认证 | 符合 | 不符合 | 不符合 | 不符合 | 不符合 |
厂商名称 | SEMTECH | SEMTECH | SEMTECH | SEMTECH | SEMTECH |
零件包装代码 | DSBGA | DSBGA | DSBGA | DSBGA | DSBGA |
包装说明 | FLIP CHIP, MO-211, CSP-6 | R-PBGA-B6 | R-PBGA-B6 | FLIP CHIP, MO-211, CSP-6 | R-PBGA-B6 |
针数 | 6 | 6 | 6 | 6 | 6 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
最小击穿电压 | 6 V | 6 V | 6 V | 6 V | 6 V |
最大钳位电压 | 11 V | 11 V | 11 V | 11 V | 11 V |
配置 | COMMON ANODE, 4 ELEMENTS | COMMON ANODE, 4 ELEMENTS | COMMON ANODE, 4 ELEMENTS | COMMON ANODE, 4 ELEMENTS | COMMON ANODE, 4 ELEMENTS |
二极管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
二极管类型 | TRANS VOLTAGE SUPPRESSOR DIODE | TRANS VOLTAGE SUPPRESSOR DIODE | TRANS VOLTAGE SUPPRESSOR DIODE | TRANS VOLTAGE SUPPRESSOR DIODE | TRANS VOLTAGE SUPPRESSOR DIODE |
JEDEC-95代码 | MO-211BB | MO-211BB | MO-211BB | MO-211BB | MO-211BB |
JESD-30 代码 | R-PBGA-B6 | R-PBGA-B6 | R-PBGA-B6 | R-PBGA-B6 | R-PBGA-B6 |
最大非重复峰值反向功率耗散 | 300 W | 300 W | 300 W | 300 W | 300 W |
元件数量 | 4 | 4 | 4 | 4 | 4 |
端子数量 | 6 | 6 | 6 | 6 | 6 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY |
极性 | UNIDIRECTIONAL | UNIDIRECTIONAL | UNIDIRECTIONAL | UNIDIRECTIONAL | UNIDIRECTIONAL |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
最大重复峰值反向电压 | 5 V | 5 V | 5 V | 5 V | 5 V |
表面贴装 | YES | YES | YES | YES | YES |
技术 | AVALANCHE | AVALANCHE | AVALANCHE | AVALANCHE | AVALANCHE |
端子形式 | BALL | BALL | BALL | BALL | BALL |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
JESD-609代码 | - | e0 | e0 | e0 | e0 |
峰值回流温度(摄氏度) | - | 240 | 240 | NOT SPECIFIED | NOT SPECIFIED |
端子面层 | - | TIN LEAD | TIN LEAD | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
处于峰值回流温度下的最长时间 | - | 10 | 10 | NOT SPECIFIED | NOT SPECIFIED |
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