SENSITRON
SEMICONDUCTOR
Data Sheet 2712, Rev.
A
Features
RS1A – RS1M
1.0A SURFACE MOUNT FAST RECOVERY RECTIFIER
B
Glass Passivated Die Construction
Ideally Suited for Automatic Assembly
Low Forward Voltage Drop, High Efficiency
Surge Overload Rating to 30A Peak
Low Power Loss
Fast Recovery Time
Plastic Case Material has UL Flammability
Classification Rating 94V-O
A
F
C
H
G
E
Mechanical Data
Case: Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
Weight: 0.064 grams (approx.)
Dim
A
B
C
D
E
F
G
H
SMA/DO-214AC
Min Max Min
2.50
4.00
1.40
4.80
2.00
0.76
2.90
4.60
1.60
5.28
2.44
1.52
0.098
0.157
0.055
0.189
0.079
0.030
Max
0.114
0.181
0.063
0.012
0.208
0.096
0.008
0.060
0.152 0.305 0.006
0.051 0.203 0.002
In mm
In inch
Maximum Ratings and Electrical Characteristics
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@T
L
= 90°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
RS1A
@T
A
=25°C unless otherwise specified
RS1B
RS1D
RS1G
RS1J
RS1K
RS1M
Unit
50
35
100
70
200
140
400
280
1.0
600
420
800
560
1000
700
V
V
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
@I
F
= 1.0A
@T
A
= 25°C
@T
A
= 125°C
I
FSM
V
FM
I
RM
t
rr
C
j
R
θJL
T
j,
T
STG
150
30
1.30
5.0
300
250
10
32
-50 to +150
500
A
V
µA
nS
pF
K/W
°C
Note: 1. Measured with I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A,
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
2
3. Mounted on P.C. Board with 8.0mm land area.
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1.2
I
O
, AVERAGE RECTIFIED CURRENT (A)
M
1.0
I
F,
INSTANTANEOUS FORWARD CURRENT (A)
10
0.8
1.0
0.6
0.4
0.1
0.2
T
j
= 25°C
I
F
Pulse Width: 300
µ
s
0
25
0.01
50
75
100
125
150
175
0
0.4
0.8
1.2
1.6
T
L
, LEAD TEMPERATURE
(
°
C)
Fig. 1 Forward Current Derating Curve
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
I
FSM
, PEAK FORWARD SURGE CURRENT (A)
30
Single Half-Sine-Wave
(JEDEC Method)
I
R
, INSTANTANEOUS REVERSE CURRENT (µA)
•
•
•
•
•
1000
T
j
= 125
°
C
T
j
= 150°C
100
20
10
10
1.0
T
j
= 25°C
0
1
10
100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Forward Surge Current Derating Curve
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 4 Typical Reverse Characteristics
t
rr
+0.5A
50
Ω
NI (Non-inductive)
10
Ω
NI
Device
Under
Test
(-)
Pulse
Generator
(Note 2)
0A
(+)
50V DC
Approx
-0.25A
(-)
1.0
Ω
NI
Oscilloscope
(Note 1)
(+)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0M
Ω
, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50
Ω
.
-1.0A
Set time base for 10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
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DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior not ice to improve
product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest
version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
Sensitron Semiconductor.
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party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations.
SENSITRON
SEMICONDUCTOR
M
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