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UF4001

产品描述Rectifier Diode, 1 Element, 1A, 50V V(RRM),
产品类别分立半导体    二极管   
文件大小53KB,共2页
制造商Galaxy Semi-Conductor Co Ltd
标准
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UF4001概述

Rectifier Diode, 1 Element, 1A, 50V V(RRM),

UF4001规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Galaxy Semi-Conductor Co Ltd
Reach Compliance Codeunknown
配置SINGLE
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1 V
最大非重复峰值正向电流30 A
元件数量1
最高工作温度150 °C
最大输出电流1 A
最大重复峰值反向电压50 V
最大反向恢复时间0.05 µs
表面贴装NO

UF4001文档预览

BL
FEATURES
Low cost
GALAXY ELECTRICAL
UF4001 - - - UF4007
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 1.0 A
ULTRA FAST RECTIFIER
DO - 41
Diffusde junction
Low leakage
Low forward voltage drop
High current capability
z
Easily cleaned with freon, alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO--41,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.012 ounces,0.34 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
 
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
UF4001 UF4002 UF4003 UF4004 UF4005 UF4006 UF4007 UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
1000
V
V
V
A
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
30.0
A
Maximum instantaneous forw ard voltage
@ 1.0A
Maximum reverse current
@T
A
=25
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
1.0
10.0
100.0
50
17
60
- 55 ----- + 150
- 55 ----- + 150
1.7
V
A
at rated DC blocking voltage @T
A
=100
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
75
ns
pF
/W
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
www.galaxycn.com
2. Measured at 1.0MH
Z
and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient
Document Number 0264006
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
UF4001 - - - UF4007
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
N 1.
10
N 1.
t
rr
+0.5A
D.U.T.
(+)
50VDC
(approx)
(-)
1
NONIN-
DUCTIVE
(-)
PULSE
GENERATOR
(NOTE2)
OSCILLOSCOPE
(NOTE 1)
(-)
0
-0.25A
-1.0A
1 c m
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF.
JJJJJ2.RISE
TIME =10ns MAX.SOURCE IMPEDANCE=50 .
SET TIME BASE FOR 10/20 ns/cm
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
INSTANTANEOUS FORWARD CURRENT
FIG.3 -- FORWARD DERATING CURVE
z
UF4001 - UF4004
UF4005 - UF4007
1.0
AVERAGE FORWARD CURRENT
2.0
1.0
AMPERES
AMPERES
0.5
Single Phase
Half Wave 60H
Z
Resistive or
Inductive Load
0.375"(95mm)Lead Length
0.1
T
J
=25
Pulse Width=300
µ
s
0
0
25
50
75
100
125
150 175
0
0
0.4
0.8
1.2
1.6
2.0
2.4
INSTANTANEOUS FORW ARD VOLTAGE, VOLTS
AMBIENT TEMPERATURE,
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
PEAK FORWARD SURGE CURRENT
FIG.5 -- PEAK FORWARD SURGE CURRENT
JUNCTION CAPACITANCE,pF
100
60
40
20
10
6
4
2
T
J
=25
f=1MHz
30
25
20
8.3m Single Half
s
Sine-W
ave
AMPERES
15
10
5
0
1
5
10
20
50
100
1
0.1 0.2
0.4
1
2
4
10 20
40
100
REVERSE VOLTAGE,VOLTS
NUMBER OF CYCLES AT 60Hz
www.galaxycn.com
Document Number 0264006
BL
GALAXY ELECTRICAL
2.

 
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