Datasheet> 器件分类 > 分立半导体> 二极管> MVUPS160E3

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MVUPS160E3: 产品描述Rectifier Diode, Schottky, 1 Element, 1A, 60V V(RRM), Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, DO-216, POWERMITE-1; 产品类别分立半导体二极管; 文件大小116KB，共2页; 制造商Microsemi; 官网地址https://www.microsemi.com; 标准

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MVUPS160E3概述

Rectifier Diode, Schottky, 1 Element, 1A, 60V V(RRM), Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, DO-216, POWERMITE-1

MVUPS160E3规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	Microsemi
零件包装代码	DO-216
包装说明	ROHS COMPLIANT, PLASTIC, DO-216, POWERMITE-1
针数	1
Reach Compliance Code	compliant
ECCN代码	EAR99
外壳连接	CATHODE
配置	SINGLE
二极管元件材料	SILICON
二极管类型	RECTIFIER DIODE
JEDEC-95代码	DO-216AA
JESD-30 代码	S-PSSO-G1
JESD-609代码	e3
元件数量	1
端子数量	1
最高工作温度	125 °C
最低工作温度	-65 °C
最大输出电流	1 A
封装主体材料	PLASTIC/EPOXY
封装形状	SQUARE
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	260
认证状态	Not Qualified
最大重复峰值反向电压	60 V
表面贴装	YES
技术	SCHOTTKY
端子面层	MATTE TIN
端子形式	GULL WING
端子位置	SINGLE
处于峰值回流温度下的最长时间	40

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UPS160e3

1.0 A Schottky Barrier Rectifier

DESCRIPTION

KEY FEATURES

WWW .

Microsemi

The Microsemi UPS160e3 Powermite

Schottky rectifier is RoHS

compliant and offers optimized forward voltage characteristics with reverse

blocking capabilities up to 60 Volt. They are ideal for surface mount

applications that operate at high frequencies.

In addition to its size advantages, Powermite

package features include a

full metallic bottom that eliminates possibility of solder flux entrapment

during assembly, and a unique locking tab acts as an efficient heat path

from die to mounting plane for external heat sinking with very low thermal

resistance junction to case (bottom). Its innovative design makes this

device ideal for use with automatic insertion equipment.

IMPORTANT:

For the most current data, consult

MICROSEMI’s

website:

http://www.microsemi.com

ABSOLUTE MAXIMUM RATINGS AT 25º C

(UNLESS OTHERWISE SPECIFIED)

Rating

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

Average Rectified Output Current

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine wave Superimposed

on Rated Load@ T

=90 ºC

Storage Temperature

Junction Temperature

Symbol

RRM

RWM

R (RMS)

FSM

stg

Value

Unit

Low thermal resistance DO-216 package

RoHS Compliant with e3 suffix part number

Guard-ring-die construction for transient

protection

Efficient heat path with Integral locking

bottom metal tab

Low forward voltage

Full metallic bottom eliminates flux

entrapment

Compatible with automatic insertion

Low profile-maximum height of 1mm

Options for screening in accordance with

MIL-PRF-19500 for JAN, JANTX, and

JANTXV are available by adding MQ, MX, or

MV prefixes respectively to part numbers.

For example, designate MXUPS160e3 for a

JANTX (consult factory for Tin-Lead plating).

Optional 100% avionics screening available

by adding MA prefix for 100% temperature

cycle, thermal impedance and 24 hours

HTRB (consult factory for Tin-Lead plating)

APPLICATIONS/BENEFITS

Switching and Regulating Power Supplies.

Silicon Schottky (hot carrier) rectifier for

minimal reverse voltage recovery

Elimination of reverse-recovery oscillations

to reduce need for EMI filtering

Charge Pump Circuits

Reduces reverse recovery loss with low I

Small 8.45 mm

foot print

(See mounting pad details next page)

MECHANICAL & PACKAGING

1.0

-65 to +150

-65 to +125

ºC

THERMAL CHARACTERISTICS

(UNLESS OTHERWISE SPECIFIED)

Thermal Resistance

Junction-to-case (bottom)

Junction-to-ambient (1)

θJC

θJA

240

ºC/ Watt

(1) When mounted on FR-4 PC board using 1 oz copper with recommended minimum foot print

DO-216

•

CASE: Void-free transfer molded

thermosetting epoxy compound meeting

UL94V-0

•

FINISH: Annealed matte-Tin plating over

copper and readily solderable per MIL-

STD-750 method 2026 (consult factory for

Tin-Lead plating)

•

POLARITY: See figure (left)

•

MARKING: S60•

•

WEIGHT: 0.016 grams (approx.)

•

Package dimension on last page

•

Tape & Reel option: 12 mm tape per

Standard EIA-481-B, 3000 on 7 inch reel

and 12,000 on 13” reel

UPS160E3

See further details and dimensions on last page

2007

6-26-2007 Rev B

Microsemi

Page 1

MVUPS160E3相似产品对比

	MVUPS160E3	MAUPS160E3	MQUPS160E3	MXUPS160E3
描述	Rectifier Diode, Schottky, 1 Element, 1A, 60V V(RRM), Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, DO-216, POWERMITE-1	Rectifier Diode, Schottky, 1 Element, 1A, 60V V(RRM), Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, DO-216, POWERMITE-1	Rectifier Diode, Schottky, 1 Element, 1A, 60V V(RRM), Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, DO-216, POWERMITE-1	Rectifier Diode, Schottky, 1 Element, 1A, 60V V(RRM), Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, DO-216, POWERMITE-1
是否无铅	不含铅	不含铅	不含铅	不含铅
是否Rohs认证	符合	符合	符合	符合
厂商名称	Microsemi	Microsemi	Microsemi	Microsemi
零件包装代码	DO-216	DO-216	DO-216	DO-216
包装说明	ROHS COMPLIANT, PLASTIC, DO-216, POWERMITE-1	ROHS COMPLIANT, PLASTIC, DO-216, POWERMITE-1	ROHS COMPLIANT, PLASTIC, DO-216, POWERMITE-1	ROHS COMPLIANT, PLASTIC, DO-216, POWERMITE-1
针数	1	1	1	1
Reach Compliance Code	compliant	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99
外壳连接	CATHODE	CATHODE	CATHODE	CATHODE
配置	SINGLE	SINGLE	SINGLE	SINGLE
二极管元件材料	SILICON	SILICON	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JEDEC-95代码	DO-216AA	DO-216AA	DO-216AA	DO-216AA
JESD-30 代码	S-PSSO-G1	S-PSSO-G1	S-PSSO-G1	S-PSSO-G1
JESD-609代码	e3	e3	e3	e3
元件数量	1	1	1	1
端子数量	1	1	1	1
最高工作温度	125 °C	125 °C	125 °C	125 °C
最低工作温度	-65 °C	-65 °C	-65 °C	-65 °C
最大输出电流	1 A	1 A	1 A	1 A
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	SQUARE	SQUARE	SQUARE	SQUARE
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
峰值回流温度（摄氏度）	260	260	260	260
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified
最大重复峰值反向电压	60 V	60 V	60 V	60 V
表面贴装	YES	YES	YES	YES
技术	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY
端子面层	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN
端子形式	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	SINGLE	SINGLE	SINGLE	SINGLE
处于峰值回流温度下的最长时间	40	40	40	40

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