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JANTX2N5116UB

产品描述Small Signal Field-Effect Transistor, 30V, 1-Element, P-Channel, Silicon, Junction FET, CERAMIC PACKAGE-3
产品类别分立半导体    晶体管   
文件大小50KB,共2页
制造商Microsemi
官网地址https://www.microsemi.com
下载文档 详细参数 选型对比 全文预览

JANTX2N5116UB概述

Small Signal Field-Effect Transistor, 30V, 1-Element, P-Channel, Silicon, Junction FET, CERAMIC PACKAGE-3

JANTX2N5116UB规格参数

参数名称属性值
是否Rohs认证不符合
包装说明SMALL OUTLINE, R-CDSO-N3
针数3
Reach Compliance Code_compli
ECCN代码EAR99
配置SINGLE
最小漏源击穿电压30 V
最大漏源导通电阻175 Ω
FET 技术JUNCTION
最大反馈电容 (Crss)7 pF
JESD-30 代码R-CDSO-N3
JESD-609代码e0
元件数量1
端子数量3
工作模式DEPLETION MODE
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型P-CHANNEL
认证状态Not Qualified
参考标准MIL-19500/476C
表面贴装YES
端子面层Tin/Lead (Sn/Pb)
端子形式NO LEAD
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用SWITCHING
晶体管元件材料SILICON
Base Number Matches1

文档预览

下载PDF文档
TECHNICAL DATA
P-CHANNEL J-FET
Qualified per MIL-PRF-19500/476
Devices
Qualified
Level
2N5115
2N5115UB
2N5116
2N5116UB
JAN
JANTX
JANTXV
2N5114
2N5114UB
ABSOLUTE MAXIMUM RATINGS
(T
C
=+25
0
C unless otherwise noted)
Parameters / Test Conditions
Symbol
All Devices
Gate-Source Voltage
V
GS
30
(1)
Drain-Source Voltage
V
DS
30
Drain-Gate Voltage
V
DG
30
Gate Current
I
G
50
0 (2)
Power Dissipation
T
A
= +25 C
P
T
0.500
Storage Temperature Range
T
stg
-65 to +200
(1) Symmetrical geometry allows operation of those units with source/drain leads interchanged.
(2) Derate linearly 3.0 mW/
0
C for T
A
> 25
0
C.
(1)
Unit
Vdc
Vdc
Vdc
mAdc
W
0
C
TO-18*
(TO-206AA)
Surface Mount
(UB version)
*See appendix A
for package
outline
ELECTRICAL CHARACTERISTICS
(T
C
= +25
0
C unless otherwise noted)
Parameters / Test Conditions
Symbol
Gate-Source Breakdown Voltage
V
DS
= 0, I
G
= 1.0
µAdc
Drain-Source “On” State Voltage
V
GS
= 0 Vdc, I
D
= -15 mAdc
V
GS
= 0 Vdc, I
D
= -7.0 mAdc
V
GS
= 0 Vdc, I
D
= -3.0 mAdc
Gate Reverse Current
V
DS
= 0, V
GS
= 20 Vdc
Drain Current Cutoff
V
GS
= 12 Vdc, V
DS
= -15 Vdc
V
GS
= 7.0 Vdc, V
DS
= -15 Vdc
V
GS
= 5.0 Vdc, V
DS
= -15 Vdc
V
(BR)GSS
2N5114
2N5115
2N5116
Min.
30
Max.
Units
Vdc
V
DS(on)
1.3
0.8
0.6
500
Vdc
I
GSS
2N5114
2N5115
2N5116
pAdc
I
D(off)
-500
-500
-500
pAdc
pAdc
pAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
022802
Page 1 of 2

JANTX2N5116UB相似产品对比

JANTX2N5116UB JANTXV2N5114UB JANTX2N5114UB JAN2N5114UB JANTX2N5115UB JAN2N5115UB 2SC4350_15 JAN2N5116UB
描述 Small Signal Field-Effect Transistor, 30V, 1-Element, P-Channel, Silicon, Junction FET, CERAMIC PACKAGE-3 Small Signal Field-Effect Transistor, 30V, 1-Element, P-Channel, Silicon, Junction FET, CERAMIC PACKAGE-3 Small Signal Field-Effect Transistor, 30V, 1-Element, P-Channel, Silicon, Junction FET, CERAMIC PACKAGE-3 Small Signal Field-Effect Transistor, 30V, 1-Element, P-Channel, Silicon, Junction FET, CERAMIC PACKAGE-3 Small Signal Field-Effect Transistor, 30V, 1-Element, P-Channel, Silicon, Junction FET, CERAMIC PACKAGE-3 Small Signal Field-Effect Transistor, 30V, 1-Element, P-Channel, Silicon, Junction FET, CERAMIC PACKAGE-3 Silicon NPN Power Transistors Small Signal Field-Effect Transistor, 30V, 1-Element, P-Channel, Silicon, Junction FET, CERAMIC PACKAGE-3
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 - 不符合
包装说明 SMALL OUTLINE, R-CDSO-N3 SMALL OUTLINE, R-CDSO-N3 SMALL OUTLINE, R-CDSO-N3 SMALL OUTLINE, R-CDSO-N3 SMALL OUTLINE, R-CDSO-N3 SMALL OUTLINE, R-CDSO-N3 - SMALL OUTLINE, R-CDSO-N3
针数 3 3 3 3 3 3 - 3
Reach Compliance Code _compli not_compliant _compli not_compliant _compli _compli - _compli
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 - EAR99
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE - SINGLE
最小漏源击穿电压 30 V 30 V 30 V 30 V 30 V 30 V - 30 V
最大漏源导通电阻 175 Ω 75 Ω 75 Ω 75 Ω 100 Ω 100 Ω - 175 Ω
FET 技术 JUNCTION JUNCTION JUNCTION JUNCTION JUNCTION JUNCTION - JUNCTION
最大反馈电容 (Crss) 7 pF 7 pF 7 pF 7 pF 7 pF 7 pF - 7 pF
JESD-30 代码 R-CDSO-N3 R-CDSO-N3 R-CDSO-N3 R-CDSO-N3 R-CDSO-N3 R-CDSO-N3 - R-CDSO-N3
JESD-609代码 e0 e0 e0 e0 e0 e0 - e0
元件数量 1 1 1 1 1 1 - 1
端子数量 3 3 3 3 3 3 - 3
工作模式 DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE - DEPLETION MODE
封装主体材料 CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED - CERAMIC, METAL-SEALED COFIRED
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED - NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
极性/信道类型 P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL - P-CHANNEL
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified - Not Qualified
参考标准 MIL-19500/476C MIL-19500/476C MIL-19500/476C MIL-19500/476C MIL-19500/476C MIL-19500/476C - MIL-19500/476C
表面贴装 YES YES YES YES YES YES - YES
端子面层 Tin/Lead (Sn/Pb) TIN LEAD Tin/Lead (Sn/Pb) TIN LEAD Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb)
端子形式 NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD - NO LEAD
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL - DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED - NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING - SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON - SILICON
Base Number Matches 1 - 1 - 1 1 - 1

 
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