Product Specification
www.jmnic.com
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-220Fa package
・High
breakdown voltage high reliability.
・Wide
ASO (Safe Operating Area)
・Fast
switching speed
APPLICATIONS
・500V/25A
Switching Regulator Applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2SC3988
・
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
800
500
7
25
40
8
150
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SC3988
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CBO
V
CEO
V
EBO
V
CEX(SUS)
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
C
ob
f
T
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter sustain voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=1mA ; I
E
=0
I
C
=5mA ;R
BE
=∞
I
C
=1mA ;I
C
=0
I
C
=10A;I
B1
=-I
B2
=2A;
L=200μH
I
C
=12A I
B
=2.4A
I
C
=12A I
B
=2.4A
V
CB
=500V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=2.4A ; V
CE
=5V
I
C
=12A ; V
CE
=5V
I
E
=0 ; V
CB
=10V;f=1MHz
I
C
=2.4A ; V
CE
=10V
MIN
800
500
7
500
TYP.
MAX
UNIT
V
V
V
V
1.0
1.5
10
10
15
8
260
18
50
V
V
μA
μA
pF
MHz
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
5I
B1
=-2.5I
B2
= I
C
=14A
V
CC
≈200V;R
L
=14.3Ω
0.5
3.0
0.3
μs
μs
μs
h
FE
Classifications
L
15-30
M
20-40
N
30-50
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3988
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
JMnic
微控制器 MCU
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